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Zolotov PI, Semenov AV, Divochiy AV, Goltsman GN, Romanov NR, Klapwijk TM. Dependence of photon detection efficiency on normal-state sheet resistance in marginally superconducting films of NbN. IEEE Trans Appl Supercond. 2021;31(5):1–5.
Abstract: We present an extensive set of data on nanowire-type superconducting single-photon detectors based on niobium-nitride (NbN) to establish the empirical correlation between performance and the normal-state resistance per square. We focus, in particular, on the bias current, compared to the expected depairing current, needed to achieve a near-unity detection efficiency for photon detection. The data are discussed within the context of a model in which the photon energy triggers the movement of vortices i.e. superconducting dissipation, followed by thermal runaway. Since the model is based on the non-equilibrium theory for conventional superconductors deviations may occur, because the efficient regime is found when NbN acts as a marginal superconductor in which long-range phase coherence is frustrated.
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Zolotov P, Semenov A, Divochiy A, Goltsman G. A comparison of VN and NbN thin films towards optimal SNSPD efficiency. IEEE Trans Appl Supercond. 2021;31(5):1–4.
Abstract: Based on early phenomenological ideas about the operation of superconducting single-photon detectors (SSPD or SNSPD), it was expected that materials with a lower superconducting gap should perform better in the IR range. The plausibility of this concept could be checked using two popular SSPD materials – NbN and WSi films. However, these materials differ strongly in crystallographic structure (polycrystalline B1 versus amorphous), which makes their dependence on disorder different. In our work we present a study of the single-photon response of SSPDs made from two disordered B1 structure superconductors – vanadium nitride and niobium nitride thin films. We compare the intrinsic efficiency of devices made from films with different sheet resistance values. While both materials have a polycrystalline structure and comparable diffusion coefficient values, VN films show metallic behavior over a wide range of sheet resistance, in contrast to NbN films with an insulator-like temperature dependence of resistivity, which may be partially due to enhanced Coulomb interaction, leading to different starting points for the normal electron density of states. The results show that even though VN devices are more promising in terms of theoretical predictions, their optimal performance was not reached due to lower values of sheet resistance.
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Trifonov A, Tong C-YE, Grimes P, Lobanov Y, Kaurova N, Blundell R, et al. Development of a silicon membrane-based multipixel hot electron bolometer receiver. IEEE Trans Appl Supercond. 2017;27(4):1–5.
Abstract: We report on the development of a multipixel hot electron bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin-film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 and 300 μm, respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, fed by a monolithic drilled smooth-walled horn array.
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Korneeva Y, Sidorova M, Semenov A, Krasnosvobodtsev S, Mitsen K, Korneev A, et al. Comparison of hot-spot formation in NbC and NbN single-photon detectors. IEEE Trans Appl Supercond. 2016;26(3):1–4.
Abstract: We report an experimental investigation of the hot-spot evolution in superconducting single-photon detectors made of disordered superconducting materials with different diffusivity and energy downconversion time values, i.e., 33-nm-thick NbN and 23-nm-thick NbC films. We have demonstrated that, in NbC film, only 405-nm photons produce sufficiently large hot spot to trigger a single-photon response. The dependence of detection efficiency on bias current for 405-nm photons in NbC is similar to that for 3400-nm photons in NbN. In NbC, large diffusivity and downconversion time result in 1-D critical current suppression profile compared with the usual 2-D profile in NbN.
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Zhang W, Miao W, Li SL, Zhou KM, Shi SC, Gao JR, et al. Measurement of the spectral response of spiral-antenna coupled superconducting hot electron bolometers. IEEE Trans Appl Supercond. 2013;23(3):2300804.
Abstract: Measured spectral response of spiral-antenna coupled superconducting hot electron bolometers (HEBs) often drops dramatically at frequencies that are still within the frequency range of interest (e.g., ~ 5 THz). This is inconsistent with the implied low receiver noise temperatures from the same measurements. To understand this discrepancy, we exhaustively test and calibrate the thermal sources used in Fourier transform spectrometer measurements. We first investigate the absolute emission spectrum of high-pressure Hg arc lamp, then measure the spectral response of two spiral-antenna coupled NbN HEBs with a Martin-Puplett interferometer as spectrometer and 77 K blackbody as broadband signal source. The measured absolute emission spectrum of Hg arc lamp is proportional to frequency, corresponding to an equivalent blackbody temperature of 4000 K at 1 THz, 1500 K at 3 THz, and 800 K at 5 THz, respectively. Measured spectral response of spiral-antenna coupled NbN HEBs, corrected for air absorption, is nearly flat in the frequency range of 0.5-4 THz, consistent with simulated coupling efficiency between HEB and spiral-antenna. These results explain the discrepancy, and prove that spiral-antenna coupled superconducting NbN HEBs work well in a wide frequency range. In addition, this calibration method and these results are broadly applicable to other quasi-optical THz receivers.
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Shurakov A, Tong C-YE, Blundell R, Kaurova N, Voronov B, Gol'tsman G. Microwave stabilization of a HEB mixer in a pulse-tube cryocooler. IEEE Trans Appl Supercond. 2013;23(3):1501504.
Abstract: We report the results of our study of the stability of an 800 GHz hot electron bolometer (HEB) mixer cooled with a pulse-tube cryocooler. Pulse-tube cryocoolers introduce temperature fluctuations as well as mechanical vibrations at a frequency of ~1 Hz, both of which can cause receiver gain fluctuations at that frequency. In our system, the motor of the cryocooler was separated from the cryostat to minimize mechanical vibrations, leaving thermal effects as the dominant source of the receiver gain fluctuations. We measured root mean square temperature variations of the 4 K stage of ~7 mK. The HEB mixer was pumped by a solid state local oscillator at 810 GHz. The root mean square current fluctuations at the low noise operating point (1.50 mV, 56.5 μA) were ~0.12 μA, and were predominantly due to thermal fluctuations. To stabilize the bias current, microwave radiation was injected to the HEB mixer. The injected power level was set by a proportional-integral-derivative controller, which completely compensates for the bias current oscillations induced by the pulse-tube cryocooler. Significant improvement in the Allan variance of the receiver output power was obtained, and an Allan time of 5 s was measured.
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Ryabchun S, Tong C-YE, Blundell R, Kimberk R, Gol'tsman G. Study of the effect of microwave radiation on the operation of HEB mixers in the terahertz frequency range. IEEE Trans Appl Supercond. 2007;17(2):391–4.
Abstract: We have investigated the effect of injecting microwave radiation, with a frequency much lower than that corresponding to the energy gap of the superconductor, on the performance of the hot-electron bolometer mixer incorporated into a THz heterodyne receiver. More specifically, we show that exposing the mixer to microwave radiation does not cause a significant rise of the receiver noise temperature and fall of the mixer conversion gain so long as the microwave power is a small fraction of local oscillator power. The injection of a small, but controlled amount of microwave power therefore enables active compensation of local oscillator power and coupling fluctuations which can significantly degrade the gain stability of hot electron bolometer mixer receivers.
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Jiang L, Antipov SV, Voronov BM, Gol'tsman GN, Zhang W, Li N, et al. Characterization of the performance of a quasi-optical NbN superconducting HEB mixer. IEEE Trans Appl Supercond. 2007;17(2):395–8.
Abstract: In this paper we focus mainly on the investigation of the performance of a quasi-optical (planar log-spiral antenna) phonon-cooled NbN superconducting hot electron bolometer (HEB) mixer, which is cryogenically cooled by a close-cycled 4-K cryocooler, at 500 and 850 GHz frequency bands. The mixer's noise performance, stability of IF output power, and local oscillator (LO) power requirement are characterized for three NbN superconducting HEB devices of different sizes. The transmission characteristics of Mylar and Zitex films with incidence waves of an elliptical polarization are also examined by measuring the mixer's noise temperature. The lowest receiver noise temperatures (with no corrections) of 750 and 1100 K are measured at 500 and 850 GHz, respectively. Experimental results also demonstrate that the bigger the HEB device is, the higher the stability of IF output power becomes.
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Il'in KS, Currie M, Lindgren M, Milostnaya II, Verevkin AA, Gol'tsman GN, et al. Quantum efficiency and time-domain response of superconducting NbN hot-electron photodetectors. IEEE Trans Appl Supercond. 1999;9(2):3338–41.
Abstract: We report our studies on the response of ultrathin superconducting NbN hot-electron photodetectors. We have measured the photoresponse of few-nm-thick, micron-size structures, which consisted of single and multiple microbridges, to radiation from the continuous-wave semiconductor laser and the femtosecond Ti:sapphire laser with the wavelength of 790 nm and 400 nm, respectively. The maximum responsivity was observed near the film's superconducting transition with the device optimally current-biased in the resistive state. The responsivity of the detector, normalized to its illuminated area and the coupling factor, was 220 A/W(3/spl times/10/sup 4/ V/W), which corresponded to a quantum efficiency of 340. The responsivity was wavelength independent from the far infrared to the ultraviolet range, and was at least two orders of magnitude higher than comparable semiconductor optical detectors. The time constant of the photoresponse signal was 45 ps, when was measured at 2.15 K in the resistive (switched) state using a cryogenic electro-optical sampling technique with subpicosecond resolution. The obtained results agree very well with our calculations performed using a two-temperature model of the electron heating in thin superconducting films.
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Gerecht E, Musante CF, Jian H, Yngvesson KS, Dickinson J, Waldman J, et al. New results for NbN phonon-cooled hot electron bolometric mixers above 1 THz. IEEE Trans Appl Supercond. 1999;9(2):4217–20.
Abstract: NbN Hot Electron Bolometric (HEB) mixers have produced promising results in terms of DSB receiver noise temperature (2800 K at 1.56 THz). The LO source for these mixers is a gas laser pumped by a CO/sub 2/ laser and the device is quasi-optically coupled through an extended hemispherical lens and a self-complementary log-periodic toothed antenna. NbN HEBs do not require submicron dimensions, can be operated comfortably at 4.2 K or higher, and require LO power of about 100-500 nW. IF noise bandwidths of 5 GHz or greater have been demonstrated. The DC bias point is also not affected by thermal radiation at 300 K. Receiver noise temperatures below 1 THz are typically 450-600 K and are expected to gradually approach these levels above 1 THz as well. NbN HEB mixers thus are rapidly approaching the type of performance required of a rugged practical receiver for astronomy and remote sensing in the THz region.
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