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Author |
Cherednichenko, S.; Yagoubov, P.; Il'In, K.; Gol'tsman, G.; Gershenzon, E. |
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Title |
Large bandwidth of NbN phonon-cooled hot-electron bolometer mixers on sapphire substrates |
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Conference Article |
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Year |
1997 |
Publication |
Proc. 8th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 8th Int. Symp. Space Terahertz Technol. |
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245-257 |
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Keywords |
NbN HEB mixers, fabrication process |
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Abstract |
The bandwidth of NbN phonon-cooled hot electron bolometer mixers has been systematically investigated with respect to the film thickness and film quality variation. The films, 2.5 to 10 mm thick, were fabricated on sapphire substrates using DC reactive magnetron sputtering. All devices consisted of several parallel strips, each 1 1.1 wide and 211 long, placed between Ti-Au contact pads. To measure the gain bandwidth we used two identical BWOs operating in the 120-140 GHz frequency range, one functioning as a local oscillator and the other as a signal source. The majority of the measurements were made at an ambient temperature of 4.5 K with optimal LO and DC bias. The maximum 3 dB bandwidth (about 4 GHz) was achieved for the devices made of films which were 2.5-3.5 nm thick, had a high critical temperature, and high critical current density. A theoretical analysis of bandwidth for these mixers based on the two-temperature model gives a good description of the experimental results if one assumes that the electron temperature is equal to the critical temperature. |
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276 |
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Author |
Henrich, D.; Dorner,S.; Hofherr, M.; Il'in, K.; Semenov, A.; Heintze, E.; Scheffler, M.; Dressel, M.; Siegel, M. |
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Title |
Broadening of hot-spot response spectrum of superconducting NbN nanowire single-photon detector with reduced nitrogen content |
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Journal Article |
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Year |
2012 |
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Abbreviated Journal |
J. Appl. Phys. |
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112 |
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SSPD, SNSPD, magnetron sputtering, spectrum, NbN film, nitrogen concentration |
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The spectral detection efficiency and the dark count rate of superconducting nanowire
single-photon detectors (SNSPD) have been studied systematically on detectors made from thin
NbN films with different chemical compositions. Reduction of the nitrogen content in the 4 nm
thick NbN films results in a decrease of the dark count rates more than two orders of magnitude
and in a red shift of the cut-off wavelength of the hot-spot SNSPD response. The observed
phenomena are explained by an improvement of uniformity of NbN films that has been confirmed
by a decrease of resistivity and an increase of the ratio of the measured critical current to the
depairing current. The latter factor is considered as the most crucial for both the cut-off
wavelength and the dark count rates of SNSPD. Based on our results we propose a set of criteria
for material properties to optimize SNSPD in the infrared spectral region. VC 2012 American
Institute of Physics. [http://dx.doi.org/10.1063/1.4757625] |
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D. Henrich, S. Dorner, M. Hofherr, K. Il'in, A. Semenov, E. Heintze, M. Scheffler, M. Dressel, M. Siegel |
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English |
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Broadening of hot-spot response spectrum of superconducting NbN nanowire single-photon detector with reduced nitrogen content |
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RPLAB @ seleznev @ |
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877 |
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Inderbitzin, K.; Engel, A.; Schilling, A.; Il'in, K.; Siegel, M. |
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An ultra-fast superconducting Nb nanowire single-photon detector for soft x-rays |
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Journal Article |
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2012 |
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Abbreviated Journal |
Appl. Phys. Lett. |
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101 |
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Keywords |
SSPD, SNSPD, x-ray, Nb |
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Although superconducting nanowire single-photon detectors (SNSPDs) are well studied regarding the
detection of infrared/optical photons and keV-molecules, no studies on continuous x-ray photon
counting by thick-film detectors have been reported so far. We fabricated a 100 nm thick niobium
x-ray SNSPD (an X-SNSPD) and studied its detection capability of photons with keV-energies in
continuous mode. The detector is capable to detect photons even at reduced bias currents of 0.4%,
which is in sharp contrast to optical thin-film SNSPDs. No dark counts were recorded in extended
measurement periods. Strikingly, the signal amplitude distribution depends significantly on the photon
energy spectrum.VC |
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RPLAB @ seleznev @ |
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878 |
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Author |
Cherednichenko, S.; Yagoubov, P.; Il'in, K.; Gol'tsman, G.; Gershenzon, E. |
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Title |
Large bandwidth of NbN phonon-cooled hot-electron bolometer mixers |
Type |
Conference Article |
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Year |
1997 |
Publication |
Proc. 27th Eur. Microwave Conf. |
Abbreviated Journal |
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2 |
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Pages |
972-977 |
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Keywords |
HEB mixer, fabrication process |
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The bandwidth of NbN phonon-cooled hot electron bolometer mixers has been systematically investigated with respect to the film thickness and film quality variation. The films, 2.5 to 10 nm thick, were fabricated on sapphire substrates using DC reactive magnetron sputtering. All devices consisted of several parallel strips, each 1 um wide and 2 um long, placed between Ti-Au contact pads. To measure the gain bandwidth we used two identical BWOs operating in the 120-140 GHz frequency range, one functioning as a local oscillator and the other as a signal source. The majority of the measurements were made at an ambient temperature of 4.2 K with optimal LO and DC bias. The maximum 3 dB bandwidth (about 4 GHz) was achieved for the devices made of films which were 2.5-3.5 nm thick, had a high critical temperature, and high critical current density. A theoretical analysis of bandwidth for these mixers based on the two-temperature model gives a good description of the experimental results if one assumes that the electron temperature is equal to the critical temperature. |
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Jerusalem, Israel |
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IEEE |
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27th Eur. Microwave Conf. |
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1075 |
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Author |
Il'in, K.; Siegel, M.; Semenov, A.; Engel, A.; Hübers, H.-W.; Hollmann, E.; Gol'tsman, G.; Voronov, B. |
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Title |
Thickness dependence of superconducting properties of ultrathin Nb and NbN films |
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Conference Article |
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2004 |
Publication |
AKF-Frühjahrstagung |
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Nb, NbN films, has potential plagiarism |
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Berlin-Adlershof |
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1503 |
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Author |
Il'in, K. S.; Gol'tsman, G. N.; Voronov, B. M.; Sobolewski, Roman |
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Characterization of the electron energy relaxation process in NbN hot-electron devices |
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Conference Article |
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1999 |
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Proc. 10th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 10th Int. Symp. Space Terahertz Technol. |
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390-397 |
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HEB mixers, SSPD, SNSPD, NbN films, Nb films |
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We report on transient measurements of electron energy relaxation in NbN films with 300-fs time resolution. Using an electro-optic sampling technique, we have studied the photoresponse of 3.5-nm-thick NbN films deposited on sapphire substrates and exposed to 100-fs-wide optical pulses. Our experimental data analysis was based on the two-temperature model and has shown that in our films at the superconducting transition 10.5 K the inelastic electron-phonon scattering time was about (111}+-__.2) ps. This response time indicated that the maximum intermediate-frequency band of a NbN hot-electron phonon-cooled mixer should reach (16+41-3) GHz if one eliminates the bolometric phonon-heating effect. We have suggested several ways to increase the effectiveness of phonon cooling to achieve the above intrinsic value of the NbN mixer bandwidth. |
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1576 |
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Author |
Il'in, K. S.; Cherednichenko, S. I.; Gol'tsman, G. N.; Currie, M.; Sobolewski, R. |
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Title |
Comparative study of the bandwidth of phonon-cooled NbN hot-electron bolometers in submillimeter and optical wavelength ranges |
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Conference Article |
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1998 |
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Proc. 9th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 9th Int. Symp. Space Terahertz Technol. |
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323-330 |
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NbN HEB mixers |
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We report the results of the bandwidth measurements of NbN hot-electron bolometers, perfomied in the terahertz frequency domain at 140 GHz and 660 GHz and in time domain in the optical range at the wavelength of 395 nm.. Our studies were done on 3.5-nm-thick NbN films evaporated on sapphire substrates and patterned into ilin-size microbridges. In order to measure the gain bandwidth, we used two identical BWOs (140 or 660 GHz), one functioning as a local oscillator and the other as a signal source. The bandwidth we achieved was 3.5-4 GHz at 4.2 K with the optimal LO and DC biases. Time-domain measurements with a resolution below 300 fs were performed using an electro-optic sampling system, in the temperature range between 4.2 K to 9 K at various values of the bias current and optical power. The obtained response time of the NbN hot-electron bolometer to —100- fs-wide Ti:sapphire laser pulses was about 27 ps, what corresponds to the 5.9 GHz gain bandwidth. |
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1590 |
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Karasik, B. S.; Il'in, K. S.; Ptitsina, N. G.; Gol'tsman, G. N.; Gershenzon, E. M.; Pechen', E. V.; Krasnosvobodtsev, S. I. |
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Electron-phonon scattering rate in impure NbC films |
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1998 |
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NASA/ADS |
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NASA/ADS |
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Y35.08 |
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NbC films |
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The study of the electron-phonon interaction in thin (20 nm) NbC films with electron mean free path l=2-13 nm gives an evidence that electron scattering is significantly modified due to the interference between electron-phonon and elastic electron scattering from impurities. The interference ~T^2-term, which is proportional to the residual resistivity, dominates over the Bloch-Grüneisen contribution to resistivity at low temperatures up to 60 K. The electron energy relaxation rate is directly measured via the relaxation of hot electrons heated by modulated electromagnetic radiation. In the temperature range 1.5 – 10 K the relaxation rate shows a weak dependence on the electron mean free path and strong temperature dependence T^n with the exponent n = 2.5-3. This behaviour is well explained by the theory of the electron-phonon-impurity interference taking into account the electron coupling with transverse phonons determined from the resistivity data. |
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American Physical Society, Annual March Meeting, March 16-20, 1998 Los Angeles, CA |
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1591 |
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Sergeev, A.; Karasik, B. S.; Ptitsina, N. G.; Chulkova, G. M.; Il'in, K. S.; Gershenzon, E. M. |
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Title |
Electron–phonon interaction in disordered conductors |
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Journal Article |
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1999 |
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Phys. Rev. B Condens. Matter |
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Phys. Rev. B Condens. Matter |
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263-264 |
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190-192 |
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disordered conductors, electron-phonon interaction |
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The electron–phonon interaction is strongly modified in conductors with a small value of the electron mean free path (impure metals, thin films). As a result, the temperature dependencies of both the inelastic electron scattering rate and resistivity differ significantly from those for pure bulk materials. Recent complex measurements have shown that modified dependencies are well described at K by the electron interaction with transverse phonons. At helium temperatures, available data are conflicting, and cannot be described by an universal model. |
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0921-4526 |
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1765 |
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Semenov, A. D.; Il'in, K.; Siegel, M.; Smirnov, A.; Pavlov, S.; Richter, H.; Hübers, H.-W. |
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Title |
Evidence of non-bolometric mixing in the bandwidth of a hot-electron bolometer |
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2006 |
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Superconductor Science and Technology |
Abbreviated Journal |
Supercond. Sci. Technol. |
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19 |
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10 |
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1051-1056 |
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HEB |
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0953-2048 |
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