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Baselmans JJA, Hajenius M, Gao JR, Klapwijk TM, de Korte PAJ, Voronov B, et al. Doubling of sensitivity and bandwidth in phonon cooled hot electron bolometer mixers. Appl Phys Lett. 2004;84(11):1958–60.
Abstract: We demonstrate that the performance of NbN lattice cooled hot electron bolometer mixers depends strongly on the interface quality between the bolometer and the contact structure. We show experimentally that both the receiver noise temperature and the gain bandwidth can be improved by more than a factor of 2 by cleaning the interface and adding an additional superconducting interlayer to the contact pad. Using this we obtain a double sideband receiver noise temperature TN,DSB=950 K
at 2.5 THz and 4.3 K, uncorrected for losses in the optics. At the same bias point, we obtain an IF gain bandwidth of 6 GHz.
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Seleznev VA, Tarkhov MA, Voronov BM, Milostnaya II, Lyakhno VY, Garbuz AS, et al. Deposition and characterization of few-nanometers-thick superconducting Mo-Re films. Supercond Sci Technol. 2008;21(11):115006 (1 to 6).
Abstract: We report on the fabrication and investigation of few-nanometers-thick superconducting molybdenum-rhenium (Mo-Re) films intended for use in nanowire single-photon superconducting detectors (SSPDs). Mo-Re films were deposited on sapphire substrates by DC magnetron sputtering of an Mo(60)-Re(40) alloy target in an atmosphere of argon. The films 2-10 nm thick had critical temperatures (Tc) from 5.6 to 9.7 K. HRTEM (high-resolution transmission electron microscopy) analysis showed that the films had a homogeneous structure. XPS (x-ray photoelectron spectroscopy) analysis showed the Mo to Re atom ratio to be 0.575/0.425, oxygen concentration to be 10%, and concentration of other elements to be 1%.
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Khasminskaya S, Pyatkov F, Słowik K, Ferrari S, Kahl O, Kovalyuk V, et al. Fully integrated quantum photonic circuit with an electrically driven light source. Nat Photon. 2016;10(11):727–32.
Abstract: Photonic quantum technologies allow quantum phenomena to be exploited in applications such as quantum cryptography, quantum simulation and quantum computation. A key requirement for practical devices is the scalable integration of single-photon sources, detectors and linear optical elements on a common platform. Nanophotonic circuits enable the realization of complex linear optical systems, while non-classical light can be measured with waveguide-integrated detectors. However, reproducible single-photon sources with high brightness and compatibility with photonic devices remain elusive for fully integrated systems. Here, we report the observation of antibunching in the light emitted from an electrically driven carbon nanotube embedded within a photonic quantum circuit. Non-classical light generated on chip is recorded under cryogenic conditions with waveguide-integrated superconducting single-photon detectors, without requiring optical filtering. Because exclusively scalable fabrication and deposition methods are used, our results establish carbon nanotubes as promising nanoscale single-photon emitters for hybrid quantum photonic devices.
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Il'in KS, Verevkin AA, Gol'tsman GN, Sobolewski R. Infrared hot-electron NbN superconducting photodetectors for imaging applications. Supercond Sci Technol. 1999;12(11):755–8.
Abstract: We report an effective quantum efficiency of 340, responsivity >200 A W-1 (>104 V W-1) and response time of 27±5 ps at temperatures close to the superconducting transition for NbN superconducting hot-electron photodetectors (HEPs) in the near-infrared and optical ranges. Our studies were performed on a few nm thick NbN films deposited on sapphire substrates and patterned into µm-size multibridge detector structures, incorporated into a coplanar transmission line. The time-resolved photoresponse was studied by means of subpicosecond electro-optic sampling with 100 fs wide laser pulses. The quantum efficiency and responsivity studies of our photodetectors were conducted using an amplitude-modulated infrared beam, fibre-optically coupled to the device. The observed picosecond response time and the very high efficiency and sensitivity of the NbN HEPs make them an excellent choice for infrared imaging photodetectors and input optical-to-electrical transducers for superconducting digital circuits.
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Rönnung F, Cherednichenko S, Winkler D, Gol'tsman GN. A nanoscale YBCO mixer optically coupled with a bow tie antenna. Supercond Sci Technol. 1999;12(11):853–5.
Abstract: The bolometric response of YBa2Cu3O7-δ(YBCO) hot-electron bolometers (HEBs) to near-infrared radiation was studied. Devices were fabricated from a 50 nm thick film and had in-plane areas of 10 × 10 µm2, 2 × 0.2 µm2, 1 × 0.2µm2 and 0.5 × 0.2 µm2. We found that nonequilibrium phonons cool down more effectively for the bolometers with smaller area. For the smallest bolometer the bolometric component in the response is 10 dB less than for the largest one.
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Gershenzon EM, Gol'tsman GN, Dzardanov AL, Kuznetsov EA. Superconducting UHF-limiter based on electron heating up. Sverkhprovodimost': Fizika, Khimiya, Tekhnika. 1992;5(11):2164–70.
Abstract: The results of experimental investigation of fast-action 5HF-limiter are presented; the limiter is based on the utilization of electron hetaing phenomenon in thin superconducting films. The design of SHF-limiter, which is intended for operation at liquid helium temperatures and which has the form of a section of superconducting NbN microstrip line for 1-12 GHz rang, is described.
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Gershenzon EM, Gol'tsman GN, Multanovskii VV, Ptitsina NG. Cross section for binding of free carriers into excitons in germanium. JETP Lett. 1981;33(11):574.
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Cherednichenko S, Drakinskiy V, Baubert J, Krieg J-M, Voronov B, Gol'tsman G, et al. Gain bandwidth of NbN hot-electron bolometer terahertz mixers on 1.5 μm Si3N4 / SiO2 membranes. J Appl Phys. 2007;101(12):124508 (1 to 6).
Abstract: The gain bandwidth of NbN hot-electron bolometer terahertz mixers on electrically thin Si3N4/SiO2 membranes was experimentally investigated and compared with that of HEB mixers on bulk substrates. A gain bandwidth of 3.5 GHz is achieved on bulk silicon, whereas the gain bandwidth is reduced down to 0.6–0.9 GHz for mixers on 1.5 μm Si3N4/SiO2 membranes. We show that application of a MgO buffer layer on the membrane extends the gain bandwidth to 3 GHz. The experimental data were analyzed using the film-substrate acoustic mismatch approach.
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Lipatov A, Okunev O, Smirnov K, Chulkova G, Korneev A, Kouminov P, et al. An ultrafast NbN hot-electron single-photon detector for electronic applications. Supercond Sci Technol. 2002;15(12):1689–92.
Abstract: We present the latest generation of our superconducting single-photon detector (SPD), which can work from ultraviolet to mid-infrared optical radiation wavelengths. The detector combines a high speed of operation and low jitter with high quantum efficiency (QE) and very low dark count level. The technology enhancement allows us to produce ultrathin (3.5 nm thick) structures that demonstrate QE hundreds of times better, at 1.55 μm, than previous 10 nm thick SPDs. The best, 10 × 10 μm2, SPDs demonstrate QE up to 5% at 1.55 μm and up to 11% at 0.86 μm. The intrinsic detector QE, normalized to the film absorption coefficient, reaches 100% at bias currents above 0.9 Ic for photons with wavelengths shorter than 1.3 μm.
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Verevkin AA, Ptitsina NG, Chulcova GM, Gol'Tsman GN, Gershenzon EM, Yngvesson KS. Determination of the limiting mobility of a two-dimensional electron gas in AlxGa1-xAs/GaAs heterostructures and direct measurement of the energy relaxation time. Phys Rev B Condens Matter. 1996;53(12):R7592–R7595.
Abstract: We present results for a method to measure directly the energy relaxation time (τe) for electrons in a single AlxGa1−xAs/GaAs heterojunction; measurements were performed from 1.6 to 15 K under quasiequilibrium conditions. We find τeαT−1 below 4 K, and τe independent of T above 4 K. We have also measured the energy-loss rate, ⟨Q⟩, by the Shubnikov-de Haas technique, and find ⟨Q⟩α(T3e−T3) for T<~4.2 K; Te is the electron temperature. The values and temperature dependence of τe and ⟨Q⟩ for T<4 K agree with calculations based on piezoelectric and deformation potential acoustic phonon scattering. At 4.2 K, we can also estimate the momentum relaxation time, τm, from our measured τe. This leads to a preliminary estimate of the phonon-limited mobility at 4.2 K of μ=3×107 cm2/Vs (ns=4.2×1011 cm−2), which agrees well with published numerical calculations, as well as with an earlier indirect estimate based on measurements on a sample with much higher mobility.
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