|
|
Gershenzon EM, Orlova SL, Orlov LA, Ptitsina NG, Rabinovich RI. Intervalley cyclotron-impurity resonance of electrons in n-Ge. JETP Lett. 1976;24(3):125–8.
|
|
|
|
Gershenzon EM, Gol'tsman G, Ptitsina NG. Energy spectrum of free excitons in germanium. JETP Lett. 1973;18(3):93.
|
|
|
|
Kaganov ML, Lifshitz IM, Tanatarov LV. Relaxation between electrons and the crystalline lattice. Sov Phys JETP. 1957;4(2):173–8.
|
|
|
|
Gershenzon EM, Gol'tsman GN, Multanovskii VV, Ptitsina NG. Kinetics of electron and hole binding into excitons in germanium. Sov Phys JETP. 1983;57(2):369–76.
Abstract: The kinetics of binding of free carriers'into excitons under stationary and nonstationary conditions is studied by investigating the submillimeter photoconductivity of Ge in a wide range of temperatures and of excitation levels. It is shown that the absolute values and the temperature dependence of the binding cross section (o- T-'.' ) can be satisfactorily described by the cascade recombination theory. The value of o and its temperature dependence differ significantly from the cross sections, measured in the same manner, for capture by attracting small impurities. Under nonstationary conditions, just as in the case of recombination with shallow impurities, a signifi- cant role is played by the sticking of the carriers in highly excited states.
|
|
|
|
Gershenzon EM, Gershenzon ME, Gol'tsman GN, Semenov AD, Sergeev AV. Heating of electrons in a superconductor in the resistive state by electromagnetic radiation. Sov Phys JETP. 1984;59(2):442–50.
Abstract: The effect of heating of electrons relative to phonons is observed and investigated in a superconducting film that is made resistive by current and by an external magnetic field. The effect is manifested by an increase of the film resistance under the influence of the electromagnetic radiation, and is not selective in the frequency band 10^10-10^15 Hz. The independence of the effect of frequency under conditions of strong scattering by static defects is attributed to the decisive role of electron-electron collisions in the distribution function. The experimentally obtained characteristic time of resistance variation near the superconducting transition corresponds to the relaxation time of the order parameter, while at lower temperatures and fields it corresponds to the time of the inelastic electron-phonon interaction.
|
|
|
|
Tuchak AN, Gol’tsman GN, Kitaeva GK, Penin AN, Seliverstov SV, Finkel MI, et al. Generation of nanosecond terahertz pulses by the optical rectification method. JETP Lett. 2012;96(2):94–7.
Abstract: The possibility of the generation of quasi-cw terahertz radiation by the optical rectification method for broad-band Fourier unlimited nanosecond laser pulses has been experimentally demonstrated. The broadband radiation of a LiF dye-center laser is used as a pump source of a nonlinear optical oscillator. The energy efficiency of terahertz optical frequency conversion in a periodically polarized lithium niobate crystal is 4 × 10−9 at a pump power density of 7 MW/cm2.
|
|
|
|
Baeva EM, Titova NA, Kardakova AI, Piatrusha SU, Khrapai VS. Universal bottleneck for thermal relaxation in disordered metallic films. Jetp Lett. 2020;111(2):104–8.
Abstract: We study the heat relaxation in current biased metallic films in the regime of strong electron–phonon coupling. A thermal gradient in the direction normal to the film is predicted, with a spatial temperature profile determined by the temperature-dependent heat conduction. In the case of strong phonon scattering, the heat conduction occurs predominantly via the electronic system and the profile is parabolic. This regime leads to the linear dependence of the noise temperature as a function of bias voltage, in spite of the fact that all the dimensions of the film are large compared to the electron–phonon relaxation length. This is in stark contrast to the conventional scenario of relaxation limited by the electron–phonon scattering rate. A preliminary experimental study of a 200-nm-thick NbN film indicates the relevance of our model for materials used in superconducting nanowire single-photon detectors.
|
|
|
|
Gershenzon EM, Gol'tsman GN, Ptitsina NG. Population and lifetime of excited states of shallow impurities in Ge. Sov Phys JETP. 1979;49(2):355–62.
Abstract: An investigation was made of the dependences of the intensities of photothermal ionization lines of excited states of shallow impurities in Ge on the intensity of impurity-absorbed background radiation and on temperature. The results obtained were used to find the density and lifetime of carriers of lower excited states of the impurity centers. The lifetimes of the excited states of donors in Ge were 10-~-10-" sec and the lifetime of the lower excited state of acceptors was -lo-' sec. In the presence of background radiation the population of the excited states was very different from the equilibrium value and, in particular, a population inversion of the 2pk, state relative to the 3p0 and 3s states was observed.
|
|
|
|
Gershenzon EM, Gol'tsman GN, Ptitsina NG. Submillimeter spectroscopy of semiconductors. Sov Phys JETP. 1973;37(2):299–304.
Abstract: The possibility is considered of carrying out submillimeter-wave spectral investigations of semiconductors by means of a high resolution spectrometer with backward-wave tubes. Results of a study of the excitation spectra of small impurities, D-(A +) centers and free excitons in germanium are presented.
|
|
|
|
Gershenzon EM, Gol'tsman GN. Transitions of electrons between excited states of donors in germanium. JETP Lett. 1971;14(2):63–5.
|
|
