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Gerecht E, Musante CF, Jian H, Yngvesson KS, Dickinson J, Waldman J, et al. New results for NbN phonon-cooled hot electron bolometric mixers above 1 THz. IEEE Trans Appl Supercond. 1999;9(2):4217–20.
Abstract: NbN Hot Electron Bolometric (HEB) mixers have produced promising results in terms of DSB receiver noise temperature (2800 K at 1.56 THz). The LO source for these mixers is a gas laser pumped by a CO/sub 2/ laser and the device is quasi-optically coupled through an extended hemispherical lens and a self-complementary log-periodic toothed antenna. NbN HEBs do not require submicron dimensions, can be operated comfortably at 4.2 K or higher, and require LO power of about 100-500 nW. IF noise bandwidths of 5 GHz or greater have been demonstrated. The DC bias point is also not affected by thermal radiation at 300 K. Receiver noise temperatures below 1 THz are typically 450-600 K and are expected to gradually approach these levels above 1 THz as well. NbN HEB mixers thus are rapidly approaching the type of performance required of a rugged practical receiver for astronomy and remote sensing in the THz region.
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Yagoubov P, Kroug M, Merkel H, Kollberg E, Schubert J, Hubers H-W, et al. Heterodyne measurements of a NbN superconducting hot electron mixer at terahertz frequencies. IEEE Trans Appl Supercond. 1999;9(2):3757–60.
Abstract: The performance of a NbN based phonon-cooled Hot Electron Bolometric (HEB) quasioptical mixer is investigated in the 0.65-3.12 THz frequency range. The device is made from a 3 nm thick NbN film on high resistivity Si and integrated with a planar spiral antenna on the same substrate. The in-plane dimensions of the bolometer strip are 0.2/spl times/2 /spl mu/m. The best results of the DSB noise temperature at 1.5 GHz IF frequency obtained with one device are: 1300 K at 650 GHz, 4700 K at 2.5 THz and 10000 K at 3.12 THz. The measurements were performed at 4.5 K ambient temperature. The amount of local oscillator (LO) power absorbed in the bolometer is about 100 nW. The mixer is linear to within 1 dB compression up to the signal level 10 dB below that of the LO. The intrinsic single sideband conversion gain measured at 650 GHz is -9 dB, the total conversion gain is -14 dB.
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Semenov AD, Gousev YP, Renk KF, Voronov BM, Gol'tsman GN, Gershenzon EM, et al. Noise characteristics of a NbN hot-electron mixer at 2.5 THz. IEEE Trans Appl Supercond. 1997;7(2):3572–5.
Abstract: The noise temperature of a NbN phonon cooled hot-electron mixer has been measured at a frequency of 2.5 THz for various operating conditions. We obtained for optimal operation a double sideband mixer noise temperature of /spl ap/14000 K and a system conversion loss of /spl ap/23 dB at intermediate frequencies up to 1 GHz. The dependences of the mixer noise temperature on the bias voltage, local oscillator power, and intermediate frequency were consistent with the phenomenological description based on the effective temperature approximation.
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Svechnikov SI, Okunev OV, Yagoubov PA, Gol'tsman GN, Voronov BM, Cherednichenko SI, et al. 2.5 THz NbN hot electron mixer with integrated tapered slot antenna. IEEE Trans Appl Supercond. 1997;7(2):3548–51.
Abstract: A Hot Electron Bolometer (HEB) mixer for 2.5 THz utilizing a NbN thin film device, integrated with a Broken Linearly Tapered Slot Antenna (BLTSA), has been fabricated and is presently being tested. The NbN HEB device and the antenna were fabricated on a SiO2membrane. A 0.5 micrometer thick SiO2layer was grown by rf magnetron reactive sputtering on a GaAs wafer. The HEB device (phonon-cooled type) was produced as several parallel strips, 1 micrometer wide, from an ultrathin NbN film 4-7 nm thick, that was deposited onto the SiO2layer by dc magnetron reactive sputtering. The BLTSA was photoetched in a multilayer Ti-Au metallization. In order to strengthen the membrane, the front-side of the wafer was coated with a 5 micrometer thick polyimide layer just before the membrane formation. The last operation was anisotropic etching of the GaAs in a mixture of HNO3and H2O2.
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Svechnikov S, Gol'tsman G, Voronov B, Yagoubov P, Cherednichenko S, Gershenzon E, et al. Spiral antenna NbN hot-electron bolometer mixer at submm frequencies. IEEE Trans Appl Supercond. 1997;7(2):3395–8.
Abstract: We have studied the phonon-cooled hot-electron bolometer (HEB) as a quasioptical mixer based on a spiral antenna designed for the 0.3-1 THz frequency band and fabricated on sapphire and high resistivity silicon substrates. HEB devices were produced from superconducting 3.5-5 nm thick NbN films with a critical temperature 10-12 K and a critical current density of approximately 10/sup 7/ A/cm/sup 2/ at 4.2 K. For these devices we reached a DSB receiver noise temperature below 1500 K, a total conversion loss of L/sub t/=16 dB in the 500-700 GHz frequency range, an IF bandwidth of 3-4 GHz and an optimal LO absorbed power of /spl sime/4 /spl mu/W. We experimentally analyzed various contributions to the conversion loss and obtained an RF coupling factor of about 5 dB, internal mixer loss of 10 dB and IF mismatch of 1 dB.
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Semenov AD, Gousev YP, Nebosis RS, Renk KF, Yagoubov P, Voronov BM, et al. Heterodyne detection of THz radiation with a superconducting hot‐electron bolometer mixer. Appl Phys Lett. 1996;69(2):260–2.
Abstract: We report on the use of a superconducting hot‐electron bolometer mixer for heterodyne detection of terahertz radiation. Radiation with a wavelength of 119 μm was coupled to the mixer, a NbN microbridge, by a hybrid quasioptical antenna consisting of an extended hyperhemispherical lens and a planar logarithmic spiral antenna. We found, at an intermediate frequency of 1.5 GHz, a system double side band noise temperature of ≊40 000 K and conversion losses of 25 dB. We also discuss the possibilities of further improvement of the mixer performance.
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Karasik BS, Gol'tsman GN, Voronov BM, Svechnikov SI, Gershenzon EM, Ekstrom H, et al. Hot electron quasioptical NbN superconducting mixer. IEEE Trans Appl Supercond. 1995;5(2):2232–5.
Abstract: Hot electron superconductor mixer devices made of thin NbN films on SiO/sub 2/-Si/sub 3/N/sub 4/-Si membrane have been fabricated for 300-350 GHz operation. The device consists of 5-10 parallel strips each 5 /spl mu/m long by 1 /spl mu/m wide which are coupled to a tapered slot-line antenna. The I-V characteristics and position of optimum bias point were studied in the temperature range 4.5-8 K. The performance of the mixer at higher temperatures is closer to that predicted by theory for uniform electron heating. The intermediate frequency bandwidth versus bias has also been investigated. At the operating temperature 4.2 K a bandwidth as wide as 0.8 GHz has been measured for a mixer made of 6 nm thick film. The bandwidth tends to increase with operating temperature. The performance of the NbN mixer is expected to be better for higher frequencies where the absorption of radiation should be more uniform.
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Yagoubov P, Kroug M, Merkel H, Kollberg E, Gol'tsman G, Svechnikov S, et al. Noise temperature and local oscillator power requirement of NbN phonon-cooled hot electron bolometric mixers at terahertz frequencies. Appl Phys Lett. 1998;73(19):2814–6.
Abstract: In this letter, the noise performance of NbN-based phonon-cooled hot electron bolometric quasioptical mixers is investigated in the 0.55–1.1 THz frequency range. The best results of the double-sideband <cd><2018>DSB<cd><2019> noise temperature are: 500 K at 640 GHz, 600 K at 750 GHz, 850 K at 910 GHz, and 1250 K at 1.1 THz. The water vapor in the signal path causes significant contribution to the measured receiver noise temperature around 1.1 THz. The devices are made from 3-nm-thick NbN film on high-resistivity Si and integrated with a planar spiral antenna on the same substrate. The in-plane dimensions of the bolometer strip are typically 0.2Ï«2 um. The amount of local oscillator power absorbed in the bolometer is less than 100 nW.
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Hübers H-W, Semenov A, Holldack K, Schade U, Wüstefeld G, Gol’tsman G. Time domain analysis of coherent terahertz synchrotron radiation. Appl Phys Lett. 2005;87(18):184103 (1 to 3).
Abstract: The time structure of coherent terahertz synchrotron radiation at the electron storage ring of the Berliner Elektronensynchrotron und Speicherring Gesellschaft has been analyzed with a fast superconducting hot-electron bolometer. The emission from a single bunch of electrons was found to last ∼1500ps at frequencies around 0.4THz, which is much longer than the length of an electron bunch in the time domain (∼5ps). It is suggested that this is caused by multiple reflections at the walls of the beam line. The quadratic increase of the power with the number of electrons in the bunch as predicted for coherent synchrotron radiation and the transition from stable to bursting radiation were determined from a single storage ring fill pattern of bunches with different populations.
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Tret’yakov IV, Ryabchun SA, Kaurova NS, Larionov PA, Lobastova AA, Voronov BM, et al. Optimum absorbed heterodyne power for superconducting NbN hot-electron bolometer mixer. Tech Phys Lett. 2010;36(12):1103–5.
Abstract: Absorbed heterodyne power has been measured in a low-noise broadband hot-electron bolometer (HEB) mixer for the terahertz range, operating on the effect of electron heating in the resistive state of an ultrathin superconducting NbN film. It is established that the optimum absorbed heterodyne power for the HEB mixer operating at 2.5 THz is about 100 nW.
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