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Author Zubkova, E.; An, P.; Kovalyuk, V.; Korneev, A.; Ferrari, S.; Pernice, W.; Goltsman, G. doi  openurl
  Title Integrated Bragg waveguides as an efficient optical notch filter on silicon nitride platform Type Conference Article
  Year 2017 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.  
  Volume 917 Issue (down) Pages 062042  
  Keywords Si3N4, Bragg waveguides  
  Abstract We modeled and fabricated integrated optical Bragg waveguides on a silicon nitride (Si3N4) platform. These waveguides would serve as efficient notch-filters with the desired characteristics. Transmission spectra of the fabricated integrated notch filters have been measured and attenuation at the desired wavelength of 1550 nm down to -43 dB was observed. Performance of the filters has been studied depending on different parameters, such as pitch, filling factor, and height of teeth of the Bragg grating  
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  Notes Approved no  
  Call Number RPLAB @ kovalyuk @ Serial 1141  
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Author Флоря, И. Н. isbn  openurl
  Title Ультрабыстрый однофотонный детектор для оптических применений Type Conference Article
  Year 2009 Publication Науч. сессия МИФИ Abbreviated Journal Науч. сессия МИФИ  
  Volume Issue (down) Pages 45-46  
  Keywords SSPD  
  Abstract Представлен сверхпроводниковый однофотонный детектор (SSPD) на основе ультратонкой пленки NbN, обладающий рекордным быстродействием. Активный элемент выполнен в виде N сверхпроводящих полосок соединенных параллельно, покрывающих площадку размером 10 мкм х 10 мкм. Для SSPD с N=12 длительность импульса напряжения составляет 200 пс. Полученные результаты открывают путь к детекторам обладающими скоростью счета свыше 1 ГГц, что делает SSPDs весьма привлекательными во многих применениях, в частности для квантовой криптографии. SSPD хорошо согласуется с оптоволокном и легко может быть интегрирован в полностью готовую для работы приемную систему.  
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  ISSN ISBN 978-5-7262-1042-1 Medium  
  Area Expedition Conference  
  Notes УДК 533.14(06)+004.056(06) Фотоника и информационная оптика Approved no  
  Call Number Serial 1145  
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Author Bandurin, D. A.; Svintsov, D.; Gayduchenko, I.; Xu, S. G.; Principi, A.; Moskotin, M.; Tretyakov, I.; Yagodkin, D.; Zhukov, S.; Taniguchi, T.; Watanabe, K.; Grigorieva, I. V.; Polini, M.; Goltsman, G. N.; Geim, A. K.; Fedorov, G. doi  openurl
  Title Resonant terahertz detection using graphene plasmons Type Journal Article
  Year 2018 Publication Nat. Commun. Abbreviated Journal Nat. Commun.  
  Volume 9 Issue (down) Pages 5392 (1 to 8)  
  Keywords THz, graphene plasmons  
  Abstract Plasmons, collective oscillations of electron systems, can efficiently couple light and electric current, and thus can be used to create sub-wavelength photodetectors, radiation mixers, and on-chip spectrometers. Despite considerable effort, it has proven challenging to implement plasmonic devices operating at terahertz frequencies. The material capable to meet this challenge is graphene as it supports long-lived electrically tunable plasmons. Here we demonstrate plasmon-assisted resonant detection of terahertz radiation by antenna-coupled graphene transistors that act as both plasmonic Fabry-Perot cavities and rectifying elements. By varying the plasmon velocity using gate voltage, we tune our detectors between multiple resonant modes and exploit this functionality to measure plasmon wavelength and lifetime in bilayer graphene as well as to probe collective modes in its moire minibands. Our devices offer a convenient tool for further plasmonic research that is often exceedingly difficult under non-ambient conditions (e.g. cryogenic temperatures) and promise a viable route for various photonic applications.  
  Address Physics Department, Moscow State University of Education (MSPU), Moscow, Russian Federation, 119435. fedorov.ge@mipt.ru  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2041-1723 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1148  
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Author Семенов, Александр Владимирович pdf  openurl
  Title Проскальзывание фазы, поглощение электромагнитного излучения и формирование отклика в детекторах на основе узких полосок сверхпроводников Type Manuscript
  Year 2010 Publication М. МПГУ Abbreviated Journal  
  Volume Issue (down) Pages  
  Keywords SSPD, SNSPD, response  
  Abstract  
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  Corporate Author Thesis Ph.D. thesis  
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  Language Russian Summary Language Original Title  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1150  
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Author Shurakov, A.; Mikhailov, D.; Belikov, I.; Kaurova, N.; Zilberley, T.; Prikhodko, A.; Voronov, B.; Vasil’evskii, I.; Goltsman, G. url  doi
openurl 
  Title Planar Schottky diode with a Γ-shaped anode suspended bridge Type Conference Article
  Year 2020 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.  
  Volume 1695 Issue (down) Pages 012154  
  Keywords Schottky diode, GaAs, InP substrate  
  Abstract In this paper we report on the fabrication of a planar Schottky diode utilizing a Г-shaped anode suspended bridge. The bridge maintains transition between the top and bottom level planes of a 1.4 µm thick GaAs mesa. To implement the profile of a suspended bridge and inward tilt of a mesa wall adjacent to it, we make use of an anisotropic etching of gallium arsenide. The geometry proposed enables the fabrication of a diode with mesa of an arbitrary thickness to mitigate AC losses in the diode layered structure at terahertz frequencies of interest. For frequencies beyond 1 THz, it is also beneficial to use the geometry for the implementation of n-GaAs/n-InGaAs heterojunction Schottky diodes grown on InP substrate.  
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  Series Volume Series Issue Edition  
  ISSN 1742-6588 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1152  
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Author Shurakov, A.; Prikhodko, A.; Mikhailov, D.; Belikov, I.; Kaurova, N.; Voronov, B.; Goltsman, G. url  doi
openurl 
  Title Efficiency of a microwave reflectometry for readout of a THz multipixel Schottky diode direct detector Type Conference Article
  Year 2020 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.  
  Volume 1695 Issue (down) Pages 012156  
  Keywords Shottky diode, THz, direct detector, multipixel camera  
  Abstract In this paper we report on the results of investigation of efficiency of a microwave reflectometry for readout of a terahertz multipixel Schottky diode direct detector. Decent capabilities of the microwave reflectometry readout were earlier justified by us for a hot electron bolometric direct detector. In case of a planar Schottky diode, we observed increase of an optical noise equivalent power by a factor of 2 compared to that measured within a conventional readout scheme. For implementation of a multipixel camera, a microwave reflectometer is to be used to readout each row of the camera, and the row switching is to be maintained by a CMOS analog multiplexer. The diodes within a row have to be equipped with filters to distribute the probing microwave signal properly. The simultaneous use of analog multiplexing and microwave reflectometry enables to reduce the camera response time by a factor of its number of columns.  
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  ISSN 1742-6588 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1153  
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Author Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. url  isbn
openurl 
  Title Silicon room temperature IR detectors coated with Ag2S quantum dots Type Conference Article
  Year 2019 Publication Proc. IWQO Abbreviated Journal Proc. IWQO  
  Volume Issue (down) Pages 369-371  
  Keywords silicon detector, quantum dot, IR, surface states  
  Abstract For decades silicon has been the chief technological semiconducting material of modern microelectronics. Application of silicon detectors in optoelectronic devices are limited to the visible and near infrared ranges, due to their transparency for radiation with a wavelength higher than 1.1 μm. The expansion Si absorption towards longer wave lengths is a considerable interest to optoelectronic applications. In this work we present an elegant and effective solution to this problem using Ag2S quantum dots, creating impurity states in Si to cause sub-band gap photon absorption. The sensitivity of room temperature zero-bias Si_Ag2S detectors, which we obtained is 1011 cmHzW . Given the variety of QDs parameters such as: material, dimensions, our results open a path towards the future study and development of Si detectors for technological applications.  
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  ISSN ISBN 978-5-89513-451-1 Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1154  
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Author Shurakov, A.; Mikhalev, P.; Mikhailov, D.; Mityashkin, V.; Tretyakov, I.; Kardakova, A.; Belikov, I.; Kaurova, N.; Voronov, B.; Vasil’evskii, I.; Gol’tsman, G. url  doi
openurl 
  Title Ti/Au/n-GaAs planar Schottky diode with a moderately Si-doped matching sublayer Type Journal Article
  Year 2018 Publication Microelectronic Engineering Abbreviated Journal Microelectronic Engineering  
  Volume 195 Issue (down) Pages 26-31  
  Keywords  
  Abstract In this paper, we report on the results of the study of the Ti/Au/n-GaAs planar Schottky diodes (PSD) intended for the wideband detection of terahertz radiation. The two types of the PSD devices were compared having either the dual n/n+ silicon dopant profile or the triple one with a moderately doped matching sublayer inserted. All the diodes demonstrated no noticeable temperature dependence of ideality factors and barrier heights, whose values covered the ranges of 1.15–1.50 and 0.75–0.85 eV, respectively. We observed the lowering of the flat band barrier height of ∼80 meV after introducing the matching sublayer into the GaAs sandwich. For both the devices types, the series resistance value as low as 20 Ω was obtained. To extract the total parasitic capacitance, we performed the Y-parameters analysis within the electromagnetic modeling of the PSD's behavior via the finite-element method. The capacitance values of 12–12.2 fF were obtained and further verified by measuring the diodes' response voltages in the frequency range of 400–480 GHz. We also calculated the AC current density distribution within the layered structures similar to those being experimentally studied. It was demonstrated that insertion of the moderately Si-doped matching sublayer might be beneficial for implementation of a PSD intended for the operation within the ‘super-THz’ frequency range.  
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  ISSN 0167-9317 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1155  
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Author Shcherbatenko, Michael; Lobanov, Yury; Benderov, Oleg; Shurakov, Alexander; Ignatov, Anton; Titova, Nadezhda; Finkel, Matvey; Maslennikov, Sergey; Kaurova, Natalya; Voronov, Boris M.; Rodin, Alexander; Klapwijk, Teunis M.; Gol'tsman, Gregory N. url  openurl
  Title Antenna-coupled 30 THz hot electron bolometer mixers Type Conference Article
  Year 2015 Publication Proc. 26th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 26th Int. Symp. Space Terahertz Technol.  
  Volume Issue (down) Pages 27  
  Keywords HEB mixer, IR, mid-IR, 30 THz, antenna-coupled  
  Abstract We report on design and characterization of a superconducting Hot Electron Bolometer Mixer integrated with a logarithmic spiral antenna for mid-IR range observations. The antenna parameters have been adjusted to achieve the ultimate performance at 10 µm (30 THz) range where O3, NH3, CO2, CH4, N2O,…. lines in the Earth’s atmosphere, in planetary atmospheres and in the interstellar space can be observed. The HEB mixer is made of a thin NbN film deposited onto a GaAs substrate. To couple the radiation we rely on the quasioptical approach: the device is glued to a semi-spherical germanium lens with diameter~ 3 mm. A wet cryostat equipped with a germanium window and narrow band-pass filter is used to characterize the antenna and estimate the mixer performance.  
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  Notes Approved no  
  Call Number Serial 1157  
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Author Shurakov, Alexander; Maslennikov, Sergey; Tong, Cheuk-yu E.; Gol’tsman, Gregory url  openurl
  Title Performance of an HEB direct detector utilizing a microwave reflection readout scheme Type Conference Article
  Year 2015 Publication Proc. 26th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 26th Int. Symp. Space Terahertz Technol.  
  Volume Issue (down) Pages 36  
  Keywords HEB detector  
  Abstract We report the results of our study on the performance of a hot electron bolometric (HEB) direct detector, operated by a microwave pump. The HEB devices used in this work were made from NbN thin film deposited on high resistivity silicon with an in-situ fabrication process. The experimental setup employed is similar to the one described in [1]. The detector chips were glued to a silicon lens clamped to a copper holder mounted on the cold plate of a liquid helium cryostat. Thermal link between the lens and the holder was maintained by a thin indium shim. The HEBs were operated at a bath temperature of about 4.4 K. Conventional phonon pump, commonly realized by raising the bath temperature of the detector, was substituted by a microwave one. In this case, a CW microwave signal is injected to the device through a directional coupler connected directly to the detector holder. The power incident on the HEB device was typically 1-2 μW, and the pump frequency was in the range of 0.5-1.5 GHz. The signal sources were 2 black bodies held at temperatures of 295 K and 77 K. A chopper wheel placed in front of the cryostat window switched the input to the detector between the 2 sources. A modulation frequency of several kilohertz was chosen in order to reduce the effects of the HEB’s flicker noise. A cold mesh filter was used to define the input bandwidth of the detector. The reflected microwave signal from the HEB device was fed into a low noise amplifier, the output of which is connected to a room temperature Schottky microwave power detector. This Schottky detector, in conjunction with a lock-in amplifier, demodulated the input signal modulation from the copper wheel. As the input load was switched, the impedance of the HEB device at the microwave pump frequency also changed in response to the incident signal power variation. Therefore the reflected microwave power follows the incident signal modulation. The derived responsivity from this detection system nicely correlates with the HEB impedance. In order to provide a quantitative description of the impedance variation of the HEB device and the impact of a microwave pump, we have numerically solved the heat balance equations written for the NbN bridge and its surrounding thermal heat sink [2]. Our model also accounts for the impact of the operating frequency of the detector because of non-uniform absorption of low-frequency photons across the NbN bridge [3]. In our measurements we varied the signal source wavelength from 2 mm down to near infrared range, and hence we indirectly performed the impedance measurements at frequencies below, around and far beyond the superconducting gap. Preliminary results show good agreement between the experiment and theoretical prediction. Further measurements are still in progress. [1] A. Shurakov et al., “A Microwave Reflection Readout Scheme for Hot Electron Bolometric Direct Detector”, to appear in IEEE Trans. THz Sci. Tech., 2015. [2] S. Maslennikov, “RF heating efficiency of the terahertz superconducting hot-electron bolometer”, http://arxiv.org/pdf/1404.5276v5.pdf, 2014. [3] W. Miao et al., “Non-uniform absorption of terahertz radiation on superconducting hot electron bolometer microbridges”, Appl. Phys. Let., 104, 052605, 2014.  
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  Notes Approved no  
  Call Number Serial 1158  
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