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Tikhonov, V. V.; Polyakova, O. N.; Gol’tsman, G. N.; Dzardanov, A. L.; Boyarskiy, D. A. |
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Determination of dielectric properties of ore minerals in the microwave band |
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Journal Article |
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2008 |
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Radiophys. Quant. Electron. |
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Radiophys. Quant. Electron. |
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51 |
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12 |
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966-974 |
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ore complex permittivity, chalcopyrite, magnetite, sphalerite, labradorite |
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We consider a method for determining the complex dielectric permittivity of ore and nonmetal minerals in the microwave band of electromagnetic radiation. The results of measuring the reflectivity and transmittivity of chalcopyrite, magnetite, sphalerite, and labradorite samples in the frequency range 77–300 GHz are presented. A method for calculation of the complex dielectric permittivity of minerals on the basis of the obtained experimental data is proposed. The approximation formulas for calculation of the complex dielectric permittivity of the studied minerals are given. |
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0033-8443 |
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1404 |
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Kahl, O.; Ferrari, S.; Kovalyuk, V.; Goltsman, G. N.; Korneev, A.; Pernice, W. H. P. |
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Waveguide integrated superconducting single-photon detectors with high internal quantum efficiency at telecom wavelengths |
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Journal Article |
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2015 |
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Sci. Rep. |
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Sci. Rep. |
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5 |
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10941 (1 to 11) |
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optical waveguides; waveguide integrated SSPD; waveguide SSPD; nanophotonics |
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Superconducting nanowire single-photon detectors (SNSPDs) provide high efficiency for detecting individual photons while keeping dark counts and timing jitter minimal. Besides superior detection performance over a broad optical bandwidth, compatibility with an integrated optical platform is a crucial requirement for applications in emerging quantum photonic technologies. Here we present efficiencies close to unity at 1550nm wavelength. This allows for the SNSPDs to be operated at bias currents far below the critical current where unwanted dark count events reach milli-Hz levels while on-chip detection efficiencies above 70% are maintained. The measured dark count rates correspond to noiseequivalent powers in the 10–19W/Hz–1/2 range and the timing jitter is as low as 35ps. Our detectors are fully scalable and interface directly with waveguide-based optical platforms. |
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PMID:26061283; PMCID:PMC4462017 |
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RPLAB @ kovalyuk @ |
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946 |
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Pernice, W.; Schuck, C.; Minaeva, O.; Li, M.; Goltsman, G. N.; Sergienko, A. V.; Tang, H. X. |
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High speed and high efficiency travelling wave single-photon detectors embedded in nanophotonic circuits |
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Miscellaneous |
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2012 |
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arXiv |
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arXiv |
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1108.5299 |
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1-23 |
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optical waveguides, waveguide SSPD, guantum photonics, jitter, detection efficiency |
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Ultrafast, high quantum efficiency single photon detectors are among the most sought-after elements in modern quantum optics and quantum communication. High photon detection efficiency is essential for scalable measurement-based quantum computation, quantum key distribution, and loophole-free Bell experiments. However, imperfect modal matching and finite photon absorption rates have usually limited the maximum attainable detection efficiency of single photon detectors. Here we demonstrate a superconducting nanowire detector atop nanophotonic waveguides which allows us to drastically increase the absorption length for incoming photons. When operating the detectors close to the critical current we achieve high on-chip single photon detection efficiency up to 91% at telecom wavelengths, with uncertainty dictated by the variation of the waveguide photon flux. We also observe remarkably low dark count rates without significant compromise of detection efficiency. Furthermore, our detectors are fully embedded in a scalable silicon photonic circuit and provide ultrashort timing jitter of 18ps. Exploiting this high temporal resolution we demonstrate ballistic photon transport in silicon ring resonators. The direct implementation of such a detector with high quantum efficiency, high detection speed and low jitter time on chip overcomes a major barrier in integrated quantum photonics. |
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845 |
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Kovaluyk, V.; Lazarenko, P.; Kozyukhin, S.; An, P.; Prokhodtsov, A.; Goltsman, G.; Sherchenkov, A. |
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Influence of the phase state of Ge2Sb2Te5 thin cover on the parameters of the optical waveguide structures |
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2019 |
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Proc. Amorphous and Nanostructured Chalcogenides |
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Proc. Amorphous and Nanostructured Chalcogenides |
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47-48 |
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optical waveguides |
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The fast switching time of Ge-Sb-Te thin films between amorphous and crystalline states initiated by laser beam as well as significant change of their optical properties and the preservation of metastable states for tens of years open wide perspectives for the application of these materials to fully optical devices [1], including high-speed optical memory [2]. Here we study optical properties of the Ge2Sb2Te5 (GST225) thin films integrated with on-chip silicon nitride O-ring resonator. The rib waveguide of the resonator was formed the first stage of e-beam lithography and subsequent reactive-ion etching. We used the second stage of e-beam lithography combining with lift-off method for the formation of GST225 active region on the resonator ring surface. The amorphous GST225 thin films were prepared by magnetron sputtering, and were capped by thin silicon oxide on their tops. The length of the GST225 active region varied from 0.1 to 20 μ m. Crystallization of amorphous thin films was carried out at the temperature of 400 °C for 30 minutes. Auger electron spectroscopy and transmission electron microscopy were used for studying composition and structure of investigated GST225thin films, respectively. It was observed that crystallization of amorphous GST225 film lead to a decrease of the optical power, transmitted through the waveguide. Comparison of the optical transmittance of O-ring resonators before and after the GST225 deposition allowed to identify the change in the Q-factor and the wavelength peak shift. This can be explained by the differences of the complex refractive indexes of GST225 thin films in the amorphous and crystalline states. From the measurement data, the GST225 effective refractive index was extracted depending on the ring waveguide width of the resonator for a telecommunication wavelength of 1550 nm. |
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Technical University of Moldova |
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1281 |
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Author |
Korneev, Alexander; Golt'sman, Gregory; Pernice, Wolfram |
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Photonic integration meets single-photon detection |
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Miscellaneous |
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2015 |
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Laser Focus World |
Abbreviated Journal |
Laser Focus World |
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51 |
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5 |
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47-50 |
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optical waveguide SSPD, SNSPD |
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By embedding superconducting nanowire single-photon detectors (SNSPDs) in nanophotonic circuits, these waveguide-integrated detectors are a key building block for future on-chip quantum computing applications. |
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RPLAB @ akorneev @ |
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1126 |
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Goltsman, G. |
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Superconducting thin film as infrared heterodyne and direct detectors |
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Conference Article |
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2017 |
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16th ISEC |
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16th ISEC |
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1-3 |
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optical waveguide SSPD, SNSPD |
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We present our recent achievements in the development of superconducting nanowire single-photon detectors (SNSPDs) integrated with optical waveguides on a chip. We demonstrate both single-photon counting with up to 90% on-chip-quantum-efficiency (OCDE), and the heterodyne mixing with a close to the quantum limit sensitivity at the telecommunication wavelength using single device. |
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8314188 |
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1323 |
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Tuchak, A. N.; Gol’tsman, G. N.; Kitaeva, G. K.; Penin, A. N.; Seliverstov, S. V.; Finkel, M. I.; Shepelev, A. V.; Yakunin, P. V. |
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Generation of nanosecond terahertz pulses by the optical rectification method |
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2012 |
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JETP Lett. |
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JETP Lett. |
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96 |
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2 |
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94-97 |
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optical rectification, lithium niobate crystal |
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The possibility of the generation of quasi-cw terahertz radiation by the optical rectification method for broad-band Fourier unlimited nanosecond laser pulses has been experimentally demonstrated. The broadband radiation of a LiF dye-center laser is used as a pump source of a nonlinear optical oscillator. The energy efficiency of terahertz optical frequency conversion in a periodically polarized lithium niobate crystal is 4 × 10−9 at a pump power density of 7 MW/cm2. |
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0021-3640 |
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1377 |
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Prokhodtsov, A.; An, P.; Kovalyuk, V.; Zubkova, E.; Golikov, A.; Korneev, A.; Ferrari, S.; Pernice, W.; Goltsman, G. |
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Optimization of on-chip photonic delay lines for telecom wavelengths |
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2018 |
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J. Phys.: Conf. Ser. |
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J. Phys.: Conf. Ser. |
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1124 |
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051052 |
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optical delay lines |
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In this work, we experimentally studied optical delay lines on silicon nitride platform for telecomm wavelength (1550 nm). We modeled the group delay time and fabricated spiral optical delay lines with different waveguide widths and radii as well as measured their transmission. For the half etched rib waveguides we achieved the losses in the range of 3 dB/cm. |
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1742-6588 |
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1196 |
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Golikov, A.; Kovalyuk, V.; An, P.; Zubkova, E.; Ferrari, S.; Pernice, W.; Korneev, A.; Goltsman, G. |
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Silicon nitride nanophotonic circuit for on-chip spontaneous four-wave mixing |
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2018 |
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J. Phys.: Conf. Ser. |
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J. Phys.: Conf. Ser. |
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1124 |
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051051 |
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O-ring resonator |
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Here we present an integrated nanophotonic circuit for on-chip spontaneous four-wave mixing. The fabricated device includes an O-ring resonator, a Bragg noch-filter as well as a nine-channel arrayed waveguide gratings (AWG) operated in the C-band wavelength range (1550 nm). The measured optical losses of the device (-6.8 dB) as well as a high Q-factor (> 1.2×105) shows a good potential for realizing the spontaneous four-wave mixing on the silicon nitride chip. |
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1742-6588 |
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1193 |
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Elmanov, Ilia; Elmanova, Anna; Kovalyuk, Vadim; An, Pavel; Goltsman, Gregory |
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Integrated contra-directional coupler for NV-centers photon filtering |
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2020 |
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Proc. 32-nd EMSS |
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Proc. 32-nd EMSS |
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354-360 |
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NV-centers, nanodiamonds, quantum photonic integrated circuits, contra-direction coupler, Bragg gratings |
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We modelled an integrated optical contra-directional coupler on silicon nitride platform. Performance of the filter was studied depending on different parameters, including the grating period and the height of teeth of the Bragg grating near 637 nm operation wavelength. The obtained results can be used for a design and fabrication of quantum photonic integrated circuits with on-chip single-photon NV-centers in nanodiamonds. |
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2724-0029 |
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978-88-85741-44-7 |
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32nd European Modeling & Simulation Symposium |
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1839 |
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