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Gershenzon EM, Gol'tsman GN. Transitions of electrons between excited states of donors in germanium. JETP Lett. 1971;14(2):63–5.
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Gershenzon EM, Gol'tsman GN, Multanovskii VV, Ptitsina NG. Kinetics of electron and hole binding into excitons in germanium. Sov Phys JETP. 1983;57(2):369–76.
Abstract: The kinetics of binding of free carriers'into excitons under stationary and nonstationary conditions is studied by investigating the submillimeter photoconductivity of Ge in a wide range of temperatures and of excitation levels. It is shown that the absolute values and the temperature dependence of the binding cross section (o- T-'.' ) can be satisfactorily described by the cascade recombination theory. The value of o and its temperature dependence differ significantly from the cross sections, measured in the same manner, for capture by attracting small impurities. Under nonstationary conditions, just as in the case of recombination with shallow impurities, a signifi- cant role is played by the sticking of the carriers in highly excited states.
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Gershenzon EM, Gol'tsman GN, Ptitsina NG. Observation of the free-exciton spectrum at submillimeter wavelengths. JETP Lett. 1972;16(4):161–2.
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Gershenzon EM, Gol'tsman GN, Multanovskii VV, Ptitsina NG. Cross section for binding of free carriers into excitons in germanium. JETP Lett. 1981;33(11):574.
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Gershenzon EM, Gol'tsman GN, Ptitsina NG. Investigation of free excitons in Ge and their condensation at submillimeter wavelengths. Sov Phys JETP. 1976;43(1):116–22.
Abstract: Results are presented of an investigation of free excitons in Ge in the submillimeter wavelength range for low as well as for high excitation levels when interaction between the excitons becomes important. The free-exciton energy spectrum is discussed. It is shown that the drop radii and their concentrations can be determined by measuring the temperature dependence of the free-exciton concentration. A section of the phase diagram is obtained in the 0.5-2.8 K temperature range for the free excitons+condensate system.
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Gershenzon EM, Gol'tsman G, Ptitsina NG. Energy spectrum of free excitons in germanium. JETP Lett. 1973;18(3):93.
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Gershenzon EM, Gol'tsman GN, Elant'ev AI. Energy spectrum of the donors in GaAs and Ge and its reaction to a magnetic field. Sov Phys JETP. 1977;45(3):555–65.
Abstract: The spectrum of the submillimeter photoconductivity of n-GaAs and n-Ge in a magnetic field up to 60 kOe at helium temperatures was investigated. A large number of lines due to transitions between excited states of the donors have been investigated, and the measurement results were used to determine a number of levels of the energy spectrum in a wide range of magnetic fields. For GaAs, these data are compared with calculations of the energy spectrum of the hydrogen atom in magnetic fields up to -2X lo9 Oe. For the donors in Ge, the energy spectrum is investigated at different orientations of the magnetic field relative to the crystallographic axes (H 11 [loo], [I 1 I], [110]), and these results are also compared with the corresponding calculations.
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Gershenzon EM, Gol'tsman GN, Emtsev VV, Mashovets TV, Ptitsyna NG, Ryvkin SM. Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium. JETP Lett. 1971;14(6):241.
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Gershenzon EM, Gol'tsman GN, Multanovskii VV, Ptitsyna NG. Capture of photoexcited carriers by shallow impurity centers in germanium. Sov Phys JETP. 1979;50(4):728–34.
Abstract: Measurements were made of the lifetimes rf of free carriers and the relaxation time 7, of the submillimeter impurity photoconductivity when carriers are captured by attracting shallow donors and acceptom in Ge. It is nod that in samples with capture-center concentration N,Z 10"cm-' the relaxation time 7, greatly exceeds rf in the temperature range 4.2-12 K. The measured values of 7,- are compared with the calculation of cascade recombination by the classical model. To evaluate the data on T,, the distinguishing features of this model are considered for the nonstationary case. The substantial difference betweea the values of rf and T, is attributed to re-emission of the carriers from the excited states of the shallow impurities.
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Gershenzon EM, Gol'tsman GN, Ptitsina NG. Population and lifetime of excited states of shallow impurities in Ge. Sov Phys JETP. 1979;49(2):355–62.
Abstract: An investigation was made of the dependences of the intensities of photothermal ionization lines of excited states of shallow impurities in Ge on the intensity of impurity-absorbed background radiation and on temperature. The results obtained were used to find the density and lifetime of carriers of lower excited states of the impurity centers. The lifetimes of the excited states of donors in Ge were 10-~-10-" sec and the lifetime of the lower excited state of acceptors was -lo-' sec. In the presence of background radiation the population of the excited states was very different from the equilibrium value and, in particular, a population inversion of the 2pk, state relative to the 3p0 and 3s states was observed.
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