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Jiang L, Antipov SV, Voronov BM, Gol'tsman GN, Zhang W, Li N, et al. Characterization of the performance of a quasi-optical NbN superconducting HEB mixer. IEEE Trans Appl Supercond. 2007;17(2):395–8.
Abstract: In this paper we focus mainly on the investigation of the performance of a quasi-optical (planar log-spiral antenna) phonon-cooled NbN superconducting hot electron bolometer (HEB) mixer, which is cryogenically cooled by a close-cycled 4-K cryocooler, at 500 and 850 GHz frequency bands. The mixer's noise performance, stability of IF output power, and local oscillator (LO) power requirement are characterized for three NbN superconducting HEB devices of different sizes. The transmission characteristics of Mylar and Zitex films with incidence waves of an elliptical polarization are also examined by measuring the mixer's noise temperature. The lowest receiver noise temperatures (with no corrections) of 750 and 1100 K are measured at 500 and 850 GHz, respectively. Experimental results also demonstrate that the bigger the HEB device is, the higher the stability of IF output power becomes.
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Gol'tsman GN, Karasik BS, Svechnikov SI, Gershenzon EM, Ekström H, Kollberg E. Noise temperature of NbN hot—electron quasioptical superconducting mixer in 200-700 GHz range [abstract]. In: Proc. 6th Int. Symp. Space Terahertz Technol.; 1995. 268.
Abstract: The electron heating effect in superconducting films is becoming very attractive for the development of THz range mixers because of the absence of frequency limitations inherent in the bolometric mechanism. However, the evidence for the spectral dependence of the position of optimal operating point has been found recently for NbN thin film devices 1.2 • The effect is presumably attributed to the variation in the absorption of radiation depending on the frequency. Since the resistive state is not spatially uniform the coupling efficiency of the mixer device with radiation can be different for frequencies larger than Zeilh and those smaller than 2Alh (d is the effective superconducting gap in the resistive state). To study the effect more thoroughly we have investigated the noise temperature of quasioptical NbN mixer device with broken hue tapered slot antenna in the frequency range 200-700 GHz. The device consists of several (5-10) parallel strips 1 jim wide and 6-7 tun thick made from NbN film on Si0 2 -Si 3 N 4 -Si membrane. The strips are connected with the gold contacts of the slot-line antenna which serves both as bias and IF leads. We used backward wave oscillators as LO sources and a standard hot/cold load technique for noise temperature measurements. The frequency dependence of noise temperature is mainly determined by two factors: frequency properties of the antenna and frequency dependence of the NbN film impedance. To separate both factors we monitored the frequency dependence of the device responsivity in the detector mode at a higher temperature within the superconducting transition where the impedance of NbN film is close to its normal resistance. In this case the impedance of the device itself is frequency independent. The experimental results will be reported at the Symposium. 1. G. Gollsman, S. Jacobsson, H. EkstrOm, B. Karasik, E. Kollberg, and E. Gershenzon, “Slot-line tapered antenna with NbN hot electron mixer for 300-360 GHz operation,” Proc of the 5th Int. Symp. on Space Terahertz Technology, pp. 209-213a, May 10-12,1994. 2. B.S. Karasik, G.N. Gol i tsman, B.M. Voronov, S.I. Svechnikov, E.M. Gershenzon, H. Ekstrom, S. Jacobsson, E. Kollberg, and K.S. Yngvesson, “Hot electron quasioptical NbN superconducting mixer,” presented at the ASC94, submitted to IEEE Trans. on Appl. Superconductivity.
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Khosropanah P, Gao JR, Laauwen WM, Hajenius M, Klapwijk TM. Low noise NbN hot electron bolometer mixer at 4.3 THz. Appl Phys Lett. 2007;91:221111 (1 to 3).
Abstract: We have studied the sensitivity of a superconducting NbN hot electron bolometer mixer integrated with a spiral antenna at 4.3 THz. Using hot/cold blackbody loads and a beam splitter all in vacuum, we measured a double sideband receiver noise temperature of 1300 K at the optimum local oscillator (LO) power of 330 nW, which is about 12 times the quantum noise (hnu/2kB). Our result indicates that there is no sign of degradation of the mixing process at the superterahertz frequencies. Moreover, a measurement method is introduced which allows us for an accurate determination of the sensitivity despite LO power fluctuations.
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Miao W, Zhang W, Zhong JQ, Shi SC, Delorme Y, Lefevre R, et al. Non-uniform absorption of terahertz radiation on superconducting hot electron bolometer microbridges. <ef><bf><bc>Appl Phys Lett. 2014;104:052605(1–4).
Abstract: We interpret the experimental observation of a frequency-dependence of superconducting hot electron bolometer (HEB) mixers by taking into account the non-uniform absorption of the terahertz radiation on the superconducting HEB microbridge. The radiation absorption is assumed to be proportional to the local surface resistance of the HEB microbridge, which is computed using the Mattis-Bardeen theory. With this assumption the dc and mixing characteristics of a superconducting niobium-nitride (NbN) HEB device have been modeled at frequencies below and above the equilibrium gap frequency of the NbN film.
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Kawamura J, Blundell R, Tong C-YE, Papa DC, Hunter TR, Paine SN, et al. Superconductive hot-electron-bolometer mixer receiver for 800-GHz operation. IEEE Trans Microw Theory Techn. 2000;48(4):683–9.
Abstract: In this paper, we describe a superconductive hot-electron-bolometer mixer receiver designed to operate in the partially transmissive 350-μm atmospheric window. The receiver employs an NbN thin-film microbridge as the mixer element, in which the main cooling mechanism of the hot electrons is through electron-phonon interaction. At a local-oscillator frequency of 808 GHz, the measured double-sideband receiver noise temperature is TRX=970 K, across a 1-GHz intermediate-frequency bandwidth centered at 1.8 GHz. We have measured the linearity of the receiver and the amount of local-oscillator power incident on the mixer for optimal operation, which is PLO≈1 μW. This receiver was used in making observations as a facility instrument at the Heinrich Hertz Telescope, Mt. Graham, AZ, during the 1998-1999 winter observing season.
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Cherednichenko S, Kroug M, Merkel H, Kollberg E, Loudkov D, Smirnov K, et al. Local oscillator power requirement and saturation effects in NbN HEB mixers. In: Jet Propulsion Laboratory CIit.u.t.e of T, editor. Proc. 12th Int. Symp. Space Terahertz Technol. San Diego, CA, USA; 2001. p. 273–85.
Abstract: The local oscillator power required for NbN hot-electron bolometric mixers (P LO ) was investigated with respect to mixer size, critical temperature and ambient temperature. P LO can be decreased by a factor of 10 as the mixer size decreases from 4×0.4 µm 2 to 0.6×0.13 µm 2 . For the smallest volume mixer the optimal local oscillator power was found to be 15 nW. We found that for such mixer no signal compression was observed up to an input signal of 2 nW which corresponds to an equivalent input load of 20,000 K. For a constant mixer volume, reduction of T c can decrease optimal local oscillator power at least by a factor of 2 without a deterioration of the receiver noise temperature. Bath temperature was found to have minor effect on the receiver characteristics.
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Hajenius M, Baselmans JJA, Gao JR, Klapwijk TM, de Korte 2 PAJ, Voronov B, et al. Increased bandwidth of NbN phonon cooled hot electron bolometer mixers. In: Proc. 15th Int. Symp. Space Terahertz Technol.; 2004. p. 381–6.
Abstract: We study experimentally the IF gain bandwidth of NbN phonon-cooled hot-electron-bolometer (HEB) mixers for a set of devices with different contact structures but an identical NbN film. We observe that the IF bandwidth depends strongly on the exact contact structure and find an IF gain bandwidth of 6 GHz for a device with an additional superconducting layer (NbTiN) in between the active NbN film and the gold contact to the antenna. These results contradict the common opinion that the IF bandwidth is determined by the phonon-escape time between the NbN film and the substrate. Hence we calculate the IF gain bandwidth of a superconducting film using a two-temperature model. We find that the bandwidth increases strongly with operating temperature and is not limited by the phonon escape time. This is because of strong temperature dependence of the phonon specific heat in the NbN film.
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Ryabchun S, Tong C-yu E, Blundell R, Kimberk R, Gol’tsman G. Effect of microwave radiation on the stability of terahertz hot-electron bolometer mixers. In: Anwar M, DeMaria AJ, Shur MS, editors. Proc. SPIE. Vol 6373. SPIE; 2006. 63730J (1 to 5).
Abstract: We report our studies of the effect of microwave radiation, with a frequency much lower than that corresponding to the energy gap of the superconductor, on the performance of the NbN hot-electron bolometer (HEB) mixer incorporated into a THz heterodyne receiver. It is shown that exposing the HEB mixer to microwave radiation does not result in a significant rise of the receiver noise temperature and degradation of the mixer conversion gain so long as the level of microwave power is small compared to the local oscillator drive. Hence the injection of a small, but controlled amount of microwave radiation enables active compensation of local oscillator power and coupling fluctuations which can significantly degrade the stability of HEB mixer receivers.
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Semenov A, Richter H, Smirnov A, Günther B, Hübers H-W, Il’in K, et al. Development of HEB mixers for GREAT and for security screening [abstract]. In: Proc. 18th Int. Symp. Space Terahertz Technol.; 2007. 184.
Abstract: We report the study on the quasioptical coupling efficiency and the gain bandwidth of NbN hot-electron bolometer mixers developed for the 4.7 THz channel of the German receiver for Astronomy at THz-frequencies (GREAT) and for security screening at subterahertz frequencies. Radiation coupling efficiency and directive properties of integrated lens antennas with log-spiral, log-periodic and double-slot planar feeds coupled to a hot-electron bolometer were experimentally studied at frequencies from 1 THz to 6 THz and compared with simulations based on the method of moments and the physical-optics ray tracing. For all studied antennas the modeled spectral dependence of the coupling efficiency fits to the experimental data obtained with both Fourier transform spectroscopy and noise temperature measurements only if the complex impedance of the bolometer is explicitly taken into account. Our experimental data did not indicate any noticeable contribution of the quantum noise to the system noise temperature. The experimentally observed deviation of the beam pattern from the model prediction increases with frequency and is most likely due to a non- ideality of the presently used lenses. Study of the intermediate frequency mixer gain at local oscillator (LO) frequencies between 2.5 THz and 0.3 THz showed an increase of the gain bandwidth at low LO frequencies that was understood as the contribution of the direct interaction of magnetic vortices with the radiation field. We have found that the non- homogeneous hot-spot model more adequately describes variation of the intermediate frequency bandwidth with the applied local oscillator power than any of uniform mixer models. The state-of-the-day performance of the GREAT 4.7-THz channel and the 0.8-THz security scanner will be presented.
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Antipov S, Trifonov A, Krause S, Meledin D, Desmaris V, Belitsky V, et al. Gain bandwidth of NbN HEB mixers on GaN buffer layer operating at 2 THz local oscillator frequency. In: Proc. 28th Int. Symp. Space Terahertz Technol.; 2017. p. 147–8.
Abstract: In this paper, we present IF bandwidth measurement results of NbN HEB mixers, which are employing NbN thin films grown on a GaN buffer-layer. The HEB mixers were operated in the heterodyne regime at a bath temperature of approximately 4.5 K and with a local oscillator operating at a frequency of 2 THz. A quantum cascade laser served as the local oscillator and a reference synthesizer based on a BWO generator (130-160 GHz) and a semiconductor superlattice (SSL) frequency multiplier was used as a signal source. By changing the LO frequency it was possible to record the IF response or gain bandwidth of the HEB with a spectrum analyzer at the operation point, which yielded lowest noise temperature. The gain bandwidth that was recorded in the heterodyne regime at 2 THz amounts to approximately 5 GHz and coincides well with a measurement that has been performed at elevated bath temperatures and lower LO frequency of 140 GHz. These findings strongly support that by using a GaN buffer-layer the phonon escape time of NbN HEBs can be significantly lower as compared to e.g. Si substrate, thus, providing higher gain bandwidth.
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