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Fedorov GE, Gaiduchenko IA, Golikov AD, Rybin MG, Obraztsova ED, Voronov BM, et al. Response of graphene based gated nanodevices exposed to THz radiation. In: EPJ Web of Conferences. Vol 103.; 2015. 10003 (1 to 2).
Abstract: In this work we report on the response of asymmetric graphene based devices to subterahertz and terahertz radiation. Our devices are made in a configuration of a field-effect transistor with conduction channel between the source and drain electrodes formed with a CVD-grown graphene. The radiation is coupled through a spiral antenna to source and top gate electrodes. Room temperature responsivity of our devices is close to the values that are attractive for commercial applications. Further optimization of the device configuration may result in appearance of novel terahertz radiation detectors.
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Voevodin EI, Gershenzon EM, Goltsman GN, Ptitsina NG, Chulkova GM. Capture of free holes by charged acceptors in uniaxially deformed Ge. Fizika i Tekhnika Poluprovodnikov. 1988;22(3):540–3.
Abstract: Цель настоящей работы — исследование кинетики примесной фотопроводимости p-Ge при сильном одноосном сжатии в широком диапазоне изменения интенсивности примесного подсвета, создающего свободные дырки, и определение сечения каскадного захвата дырок на мелкие заряженные акцепторы в условиях преобладания электрон-фононного механизма потерь энергии.
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Gershenzon EM, Goltsman GN, Multanovskii VV, Ptitsina NG. Kinetics of submillimeter impurity and exciton photoconduction in Ge. Optics and Spectroscopy. 1982;52(4):454–5.
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Gershenzon EM, Goltsman GN. Zeeman effect in excited-states of donors in germanium. Sov Phys Semicond. 1972;6(3):509.
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Gershenzon EM, Goltsman GN, Orlov L. Investigation of population and ionization of donor excited states in Ge. In: Physics of Semiconductors. North-Holland Publishing Co.; 1976. p. 631–4.
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Voevodin EI, Gershenzon EM, Goltsman GN, Ptitsina NG. Energy-spectrum of shallow acceptors in Ge deformed strongly by a uniaxial pressure. Sov Phys and Technics of Semiconductors. 1989;23(8):843–6.
Abstract: Проведены исследования спектров фототермической ионизации мелких акцепторов (В, Аl) в Ge, предельно сжатом вдоль кристаллографической оси [100]. Из данных измерений с учетом теории построен энергетический спектр примесей. Показано, что энергии большого числа уровней четных и нечетных состояний хорошо соответствуют расчету, выполненному для примесей в анизотропном полупроводнике с параметром анизотропии γ=m∗⊥/m∗∥>1.
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Goltsman GN, Maliavkin AV, Ptitsina NG, Selevko AG. Magnetic exciton spectroscopy in uniaxially compressed Ge at submillimeter waves. In: Izv. Akad. Nauk SSSR, Seriya Fizicheskaya. Vol 50.; 1986. p. 280–1.
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Rasulova GK, Pentin IV, Goltsman GN. Terahertz emission from a weakly-coupled GaAs/AlGaAs superlattice biased into three different modes of current self-oscillations. AIP Advances. 2019;9(10):105220.
Abstract: Radio-frequency modulated terahertz (THz) emission power from weakly-coupled GaAs/AlGaAs superlattice (SL) has been increased by parallel connection of several SL mesas. Each SL mesa is a self-oscillator with its own oscillation frequency and mode. In coupled non-identical SL mesas biased at different voltages within the hysteresis loop the chaotic, quasiperiodic and frequency-locked modes of self-oscillations of current arise. THz emission was detected when three connected in parallel SL mesas were biased into the frequency-locked and quasiperiodic modes of self-oscillations of current, while in the chaotic mode of those it falls to the noise level.
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Gershenzon EM, Goltsman GN, Ptitsyna NG. Investigation of excited donor states in GaAs. Sov Phys Semicond. 1974;7(10):1248–50.
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Matyushkin YE, Gayduchenko IA, Moskotin MV, Goltsman GN, Fedorov GE, Rybin MG, et al. Graphene-layer and graphene-nanoribbon FETs as THz detectors. In: J. Phys.: Conf. Ser. Vol 1124.; 2018. 051054.
Abstract: We report on detection of sub-THz radiation (129-430 GHz) using graphene based asymmetric field-effect transistor (FET) structures with different channel geometry: monolayer graphene, graphene nanoribbons. In all devices types we observed the similar trends of response on sub-THz radiation. The response fell with increasing frequency at room temperature, but increased with increasing frequency at 77 K. Our calculations show that the change in the trend of the frequency dependence at 77 K is associated with the appearance of plasma waves in the graphene channel. Unusual properties of p-n junctions in graphene are highlighted using devices of special geometry.
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