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Манова НН, Корнеева ЮП, Корнеев АА Гольцман Г. Н. Cверхпроводящий однофотонный детектор, интегрированный с оптическим резонатором. In: Науч. сессия НИЯУ МИФИ.; 2010. p. 92–3.
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Елезов МС, Корнеев АА, Дивочий АВ, Гольцман ГН. Сверхпроводящие однофотонные детекторы с разрешением числа фотонов. In: Науч. сессия МИФИ.; 2009. p. 47–58.
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Флоря ИН. Ультрабыстрый однофотонный детектор для оптических применений. In: Науч. сессия МИФИ.; 2009. p. 45–6.
Abstract: Представлен сверхпроводниковый однофотонный детектор (SSPD) на основе ультратонкой пленки NbN, обладающий рекордным быстродействием. Активный элемент выполнен в виде N сверхпроводящих полосок соединенных параллельно, покрывающих площадку размером 10 мкм х 10 мкм. Для SSPD с N=12 длительность импульса напряжения составляет 200 пс. Полученные результаты открывают путь к детекторам обладающими скоростью счета свыше 1 ГГц, что делает SSPDs весьма привлекательными во многих применениях, в частности для квантовой криптографии. SSPD хорошо согласуется с оптоволокном и легко может быть интегрирован в полностью готовую для работы приемную систему.
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Казаков АЮ, Кардакова АИ, Селиверстов СВ, Горшков КН, Дивочий АВ, Финкель МИ, et al. Возможность применения сверхпроводниковых материалов в качестве отражающего покрытия холодного зеркала телескопа субмиллиметрового диапазона. Совр проб науки и обр. 2012;(3):1–5.
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Gershenzon EM, Gol'tsman GN, Semenov AD. Submillimeter backward wave tube spectrometer for measuring superconducting film transmission. Pribory i Tekhnika Eksperimenta. 1983;26(5):134–7.
Abstract: A spectrometer employing six backward wave tubes is described. It is intended for investigation of superconductors in the 0.2-3 mm range of wave lengths. During the measurement of the transmission spectrum it is possible to determine the energy gap for superconduct1ng films 50 to 4000 A thick. The transmission factor can vary from 10-1 to 10-9. Spectrum of relation of film transmission factors in superconducting and normal states is measured for determining the energy gap 2 Δ. The transmission spectrum obtained by means of a computer for vanadium film 300 A thick is given as an example. The energy gap 2 Δ = 1.4 MeV
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Korneev A, Minaeva O, Rubtsova I, Milostnaya I, Chulkova G, Voronov B, et al. Superconducting single-photon ultrathin NbN film detector. Quantum Electronics. 2005;35(8):698–700.
Abstract: Superconducting single-photon ultrathin NbN film detectors are studied. The development of manufacturing technology of detectors and the reduction of their operating temperature down to 2 K resulted in a considerable increase in their quantum efficiency, which reached in the visible region (at 0.56 μm) 30%—40%, i.e., achieved the limit determined by the absorption coefficient of the film. The quantum efficiency exponentially decreases with increasing wavelength, being equal to ~20% at 1.55 μm and ~0.02% at 5 μm. For the dark count rate of ~10-4s-1, the experimental equivalent noise power was 1.5×10-20 W Hz-1/2; it can be decreased in the future down to the record low value of 5×10-21 W Hz-1/2. The time resolution of the detector is 30 ps.
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Voronov BM, Gershenzon EM, Gol'tsman GN, Gubkina TO, Semash VD. Superconductive properties of ultrathin NbN films on different substrates. Sverkhprovodimost': Fizika, Khimiya, Tekhnika. 1994;7(6):1097–102.
Abstract: A study was made on dependence of surface resistance, critical temperature and width of superconducting transition on application temperature and thickness of NbN films, which varied within the range of 3-10 nm. Plates of sapphire, fused and monocrystalline quartz, MgO, as well as Si and silicon oxide were used as substrates. NbN films with 160 μθ·cm specific resistance and 16.5 K (Tc) critical temperature were obtained on sapphire substrates. Intensive growth of ΔTc was noted for films, applied on fused quartz, with increase of precipitation temperature. This is explained by occurrence of high tensile stresses in NbN films, caused by sufficient difference of thermal coefficients of expansion of NbN and quartz.
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Boyarskii DA, Gershenzon VE, Gershenzon EM, Gol'tsman GN, Ptitsina NG, Tikhonov VV, et al. On the possibility of determining the microstructural parameters of an oil-bearing layer from radiophysical measurement data. J of Communications Technology and Electronics. 1996;41(5):408–14.
Abstract: A method for the reconstruction of microstructural properties of an oil-bearing rock from the spectral dependence of the transmission factor of submillimeter waves is proposed.
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Gershenson EM, Gol'tsman GN, Elant'ev AI, Kagane ML, Multanovskii VV, Ptitsina NG. Use of submillimeter backward-wave tube spectroscopy in determination of the chemical nature and concentration of residual impurities in pure semiconductors. Sov Phys Semicond. 1983;17(8):908–13.
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Shangina EL, Smirnov KV, Morozov DV, Kovalyuk VV, Gol’tsman GN, Verevkin AA, et al. Frequency bandwidth and conversion loss of a semiconductor heterodyne receiver with phonon cooling of two-dimensional electrons. Semicond. 2010;44(11):1427–9.
Abstract: The temperature and concentration dependences of the frequency bandwidth of terahertz heterodyne AlGaAs/GaAs detectors based on hot electron phenomena with phonon cooling of two-dimensional electrons have been measured by submillimeter spectroscopy with a high time resolution. At a temperature of 4.2 K, the frequency bandwidth at a level of 3 dB (f 3 dB) is varied from 150 to 250 MHz with a change in the concentration n s according to the power law f 3dB ∝ n −0.5 s due to the dominant contribution of piezoelectric phonon scattering. The minimum conversion loss of the semiconductor heterodyne detector is obtained in structures with a high carrier mobility (μ > 3 × 105 cm2 V−1 s−1 at 4.2 K).
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