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Zhang, W.; Miao, W.; Zhong, J. Q.; Shi, S. C.; Hayton, D. J.; Vercruyssen, N.; Gao, J. R.; Goltsman, G. N. |
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Title |
Temperature dependence of the receiver noise temperature and IF bandwidth of superconducting hot electron bolometer mixers |
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Journal Article |
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Year |
2014 |
Publication |
Supercond. Sci. Technol. |
Abbreviated Journal |
Supercond. Sci. Technol. |
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Volume |
27 |
Issue |
8 |
Pages |
085013 (1 to 5) |
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Keywords |
NbN HEB mixers |
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In this paper we study the temperature dependence of the receiver noise temperature and IF noise bandwidth of superconducting hot electron bolometer (HEB) mixers. Three superconducting NbN HEB devices of different transition temperatures (Tc) are measured at 0.85 THz and 1.4 THz at different bath temperatures (Tbath) between 4 K and 9 K. Measurement results demonstrate that the receiver noise temperature of superconducting NbN HEB devices is nearly constant for Tbath/Tc, less than 0.8, which is consistent with the simulation based on a distributed hot-spot model. In addition, the IF noise bandwidth appears independent of Tbath/Tc, indicating the dominance of phonon cooling in the investigated HEB devices. |
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0953-2048 |
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1358 |
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Zhang, W.; Miao, W.; Yao, Q. J.; Lin, Z. H.; Shi, S. C.; Gao, J. R.; Goltsman, G. N. |
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Title |
Spectral response and noise temperature of a 2.5 THz spiral antenna coupled NbN HEB mixer |
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Journal Article |
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Year |
2012 |
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Phys. Procedia |
Abbreviated Journal |
Phys. Procedia |
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Volume |
36 |
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334-337 |
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Keywords |
NbN HEB mixer |
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We report on a 2.5 THz spiral antenna coupled NbN hot electron bolometer (HEB) mixers, fabricated with in-situ process. The receiver noise temperature with lowest value of 1180 K is in good agreement with calculated quantum efficiency factor as a function of bias voltage. In addition, the measured spectral response of the spiral antenna coupled NbN HEB mixer shows broad frequency coverage of 0.8-3 THz, and corrected response for optical losses, FTS, and coupling efficiency between antenna and bolometer falls with frequency due to diffraction-limited beam of lens/antenna combination. |
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1875-3892 |
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1381 |
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Pentin, I. V.; Smirnov, A. V.; Ryabchun, S. A.; Ozhegov, R. V.; Gol’tsman, G. N.; Vaks, V. L.; Pripolzin, S. I.; Pavel’ev, D. G.; Koshurinov, Y. I.; Ivanov, A. S. |
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Title |
Semiconducting superlattice as a solid-state terahertz local oscillator for NbN hot-electron bolometer mixers |
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Journal Article |
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2012 |
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Tech. Phys. |
Abbreviated Journal |
Tech. Phys. |
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57 |
Issue |
7 |
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971-974 |
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semiconducting superlattice frequency multiplier, NbN HEB mixers |
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We present the results of our studies of the semiconducting superlattice (SSL) frequency multiplier and its application as part of the solid state local oscillator (LO) in the terahertz heterodyne receiver based on a NbN hot-electron bolometer (HEB) mixer. We show that the SSL output power level increases as the ambient temperature is lowered to 4.2 K, the standard HEB operation temperature. |
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1063-7842 |
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1378 |
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Gurovich, B. A.; Tarkhov, M. A.; Prikhod'ko, K. E.; Kuleshova, E. A.; Komarov, D. A.; Stolyarov, V. L.; Olshanskii, E. D.; Goncharov, B. V.; Goncharova, D. A.; Kutuzov, L. V.; Domantovskii, A. G. |
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Title |
Controlled modification of superconducting properties of NbN ultrathin films under composite ion beam irradiation |
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Journal Article |
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2014 |
Publication |
Nanotechnologies in Russia |
Abbreviated Journal |
Nanotechnologies in Russia |
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Volume |
9 |
Issue |
7 |
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386-390 |
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superconducting NbN films composite ion beam irradiation protoning |
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In this work, the results of studying the microstructure and superconducting properties of ultrathin films on the basis of NbN in the initial state and after modification by being subjecting to composite ion beam irradiation with the energy ~1–3) keV are presented. HRTEM analysis showed that the initial films on the sapphire substrate in orientation “c-cut†are characterized by a grain size essentially exceeding the film thickness, while on the other substrates the size of grains corresponds to the thickness of film. Using XPS analysis, it was shown that in the initial films the atomic ratio of Nb and N is 0.51/0.49, respectively, the percentage of oxygen being lower than 5%. For ultrathin films 5 nm in thickness, the critical temperature of transit to superconducting state (T c) is found to be ~3.6 K and the density of critical current is jc ~8MA/cm2. In the work it is experimentally determined that the irradiation of NbN films by composite ion beams leads to the controlled modification of its superconducting properties due to the process of selective substitution of nitrogen atoms on the oxygen atoms. |
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1000 |
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Korneev, A.; Korneeva, Y.; Florya, I.; Voronov, B.; Goltsman, G. |
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Title |
NbN nanowire superconducting single-photon detector for mid-infrared |
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Journal Article |
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Year |
2012 |
Publication |
Phys. Procedia |
Abbreviated Journal |
Phys. Procedia |
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36 |
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72-76 |
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NbN SSPD, SNSPD |
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Superconducting single-photon detectors (SSPD) is typically 100 nm-wide supercondiucting strip in a shape of meander made of 4-nm-thick film. To reduce response time and increase voltage response a parallel connection of the strips was proposed. Recently we demonstrated that reduction of the strip width improves the quantum effciency of such a detector at wavelengths longer than 1.5 μm. Being encourage by this progress in quantum effciency we improved the fabrication process and made parallel-wire SSPD with 40-nm-wide strips covering total area of 10 μm x 10 μm. In this paper we present the results of the characterization of such a parallel-wire SSPD at 10.6 μm wavelength and demonstrate linear dependence of the count rate on the light power as it should be in case of single-photon response. |
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1875-3892 |
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1382 |
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Korneev, A.; Divochiy, A.; Marsili, F.; Bitauld, D.; Fiore, A.; Seleznev, V.; Kaurova, N.; Tarkhov, M.; Minaeva, O.; Chulkova, G.; Smirnov, K.; Gaggero, A.; Leoni, R.; Mattioli, F.; Lagoudakis, K.; Benkhaoul, M.; Levy, F.; Goltsman, G. |
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Superconducting photon number resolving counter for near infrared applications |
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2008 |
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Proc. SPIE |
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Proc. SPIE |
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7138 |
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713828 (1 to 5) |
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PNR SSPD; SNSPD; Nanowire superconducting single-photon detector, ultrathin NbN film, infrared |
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We present a novel concept of photon number resolving detector based on 120-nm-wide superconducting stripes made of 4-nm-thick NbN film and connected in parallel (PNR-SSPD). The detector consisting of 5 strips demonstrate a capability to resolve up to 4 photons absorbed simultaneously with the single-photon quantum efficiency of 2.5% and negligibly low dark count rate. |
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Spie |
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Tománek, P.; Senderáková, D.; Hrabovský, M. |
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10.1117/12.818079 |
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1241 |
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Milostnaya, I.; Korneev, A.; Tarkhov, M.; Divochiy, A.; Minaeva, O.; Seleznev, V.; Kaurova, N.; Voronov, B.; Okunev, O.; Chulkova, G.; Smirnov, K.; Gol’tsman, G. |
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Superconducting single photon nanowire detectors development for IR and THz applications |
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2008 |
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J. Low Temp. Phys. |
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J. Low Temp. Phys. |
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151 |
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1-2 |
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591-596 |
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NbN SSPD, SNSPD |
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We present our progress in the development of superconducting single-photon detectors (SSPDs) based on meander-shaped nanowires made from few-nm-thick superconducting films. The SSPDs are operated at a temperature of 2–4.2 K (well below T c ) being biased with a current very close to the nanowire critical current at the operation temperature. To date, the material of choice for SSPDs is niobium nitride (NbN). Developed NbN SSPDs are capable of single photon counting in the range from VIS to mid-IR (up to 6 μm) with a record low dark counts rate and record-high counting rate. The use of a material with a low transition temperature should shift the detectors sensitivity towards longer wavelengths. We present state-of-the art NbN SSPDs as well as the results of our recent approach to expand the developed SSPD technology by the use of superconducting materials with lower T c , such as molybdenum rhenium (MoRe). MoRe SSPDs first were made and tested; a single photon response was obtained. |
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0022-2291 |
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1244 |
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Larrey, V.; Villegier, J. -C.; Salez, M.; Miletto-Granozio, F.; Karpov, A. |
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Processing and characterization of high Jc NbN superconducting tunnel junctions for THz analog circuits and RSFQ |
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1999 |
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IEEE Trans. Appl. Supercond. |
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9 |
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2 |
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3216-3219 |
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RSFQ, NbN, SIS |
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A generic NbN Superconducting Tunnel Junctions (STJ) technology has been developed using conventional substrates (Si and SOI-SIMOX) for making THz spectrometers including SIS receivers and RSFQ logic gates. NbN/MgO/NbN junctions with area of 1 /spl mu/m/sup 2/, Jc of 10 kA/cm/sup 2/ and low sub-gap leakage current (Vm>25 mV) are currently obtained from room temperature sputtered multilayers followed by a post-annealing at 250/spl deg/C. Using a thin MgO buffer layer deposited underneath the NbN electrodes, ensures lower NbN surface resistance values (Rs=7 /spl mu//spl Omega/) at 10 GHz and 4 K. Epitaxial NbN [100] films on MgO [100] with high gap frequency (1.4 THz) have also been achieved under the same deposition conditions at room temperature. The NbN SIS has shown good I-V photon induced steps when LO pumped at 300 GHz. We have developed an 8 levels Al/NbN multilayer process for making 1.5 THz SIS mixers (including Al antennas) on Si membranes patterned in SOI-SIMOX. Using the planarization techniques developed at the Si-MOS CEA-LETI Facility, we have also demonstrated on the possibility of extending our NbN technology to high level RSFQ circuit integration with 0.5 /spl mu/m/sup 2/ junction area, made on large area substrates (up to 8 inches). |
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1081 |
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Lobanov, Y.; Shcherbatenko, M.; Semenov, A.; Kovalyuk, V.; Kahl, O.; Ferrari, S.; Korneev, A.; Ozhegov, R.; Kaurova, N.; Voronov, B. M.; Pernice, W. H. P.; Gol'tsman, G. N. |
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Superconducting nanowire single photon detector for coherent detection of weak signals |
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2017 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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27 |
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4 |
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1-5 |
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NbN SSPD mixer, SNSPD, nanophotonic waveguide |
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Traditional photon detectors are operated in the direct detection mode, counting incident photons with a known quantum efficiency. Here, we have investigated a superconducting nanowire single photon detector (SNSPD) operated as a photon counting mixer at telecommunication wavelength around 1.5 μm. This regime of operation combines excellent sensitivity of a photon counting detector with excellent spectral resolution given by the heterodyne technique. Advantageously, we have found that low local oscillator (LO) power of the order of hundreds of femtowatts to a few picowatts is sufficient for clear observation of the incident test signal with the sensitivity approaching the quantum limit. With further optimization, the required LO power could be significantly reduced, which is promising for many practical applications, such as the development of receiver matrices or recording ultralow signals at a level of less-than-one-photon per second. In addition to a traditional NbN-based SNSPD operated with normal incidence coupling, we also use detectors with a travelling wave geometry, where a NbN nanowire is placed on the top of a Si 3 N 4 nanophotonic waveguide. This approach is fully scalable and a large number of devices could be integrated on a single chip. |
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1051-8223 |
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1206 |
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Lusche, R.; Semenov, A.; Ilin, K.; Siegel, M.; Korneeva, Y.; Trifonov, A.; Korneev, A.; Goltsman, G.; Vodolazov, D.; Hübers, H.-W. |
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Effect of the wire width on the intrinsic detection efficiency of superconducting-nanowire single-photon detectors |
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2014 |
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J. Appl. Phys. |
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J. Appl. Phys. |
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116 |
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4 |
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043906 (1 to 9) |
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NbN SSPD, SNSPD, TaN |
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A thorough spectral study of the intrinsic single-photon detection efficiency in superconducting TaN and NbN nanowires with different widths has been performed. The experiment shows that the cut-off of the intrinsic detection efficiency at near-infrared wavelengths is most likely controlled by the local suppression of the barrier for vortex nucleation around the absorption site. Beyond the cut-off quasi-particle diffusion in combination with spontaneous, thermally activated vortex crossing explains the detection process. For both materials, the reciprocal cut-off wavelength scales linearly with the wire width where the scaling factor agrees with the hot-spot detection model. |
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0021-8979 |
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