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Beck M, Klammer M, Lang S, Leiderer P, Kabanov VV, Gol’tsman GN, et al. Energy-gap dynamics of superconducting NbN thin films studied by time-resolved terahertz spectroscopy [Internet].; 2011 [cited 2024 Jul 2].arXiv:1102.5616v2 [cond-mat.supr-con]. Available from: https://arxiv.org/abs/1102.5616v2
Abstract: Using time-domain Terahertz spectroscopy we performed direct studies of the photoinduced suppression and recovery of the superconducting gap in a conventional BCS superconductor NbN. Both processes are found to be strongly temperature and excitation density dependent. The analysis of the data with the established phenomenological Rothwarf-Taylor model enabled us to determine the bare quasiparticle recombination rate, the Cooper pair-breaking rate and the electron-phonon coupling constant, \lambda = 1.1 +/- 0.1, which is in excellent agreement with theoretical estimates.
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Korneev A, Korneeva Y, Florya I, Elezov M, Manova N, Tarkhov M, et al. Recent advances in superconducting NbN single-photon detector development. In: Proc. SPIE. Vol 8072.; 2011. 807202 (1 to 10).
Abstract: Superconducting single-photon detector (SSPD) is a planar nanostructure patterned from 4-nm-thick NbN film deposited on sapphire substrate. The sensitive element of the SSPD is 100-nm-wide NbN strip. The device is operated at liquid helium temperature. Absorption of a photon leads to a local suppression of superconductivity producing subnanosecond-long voltage pulse. In infrared (at 1550 nm and longer wavelengths) SSPD outperforms avalanche photodiodes in terms of detection efficiency (DE), dark counts rate, maximum counting rate and timing jitter. Efficient single-mode fibre coupling of the SSPD enabled its usage in many applications ranging from single-photon sources research to quantum cryptography. Recently we managed to improve the SSPD performance and measured 25% detection efficiency at 1550 nm wavelength and dark counts rate of 10 s-1. We also improved photon-number resolving SSPD (PNR-SSPD) which realizes a spatial multiplexing of incident photons enabling resolving of up to 4 simultaneously absorbed photons. Another improvement is the increase of the photon absorption using a λ/4 microcavity integrated with the SSPD. And finally in our strive to increase the DE at longer wavelengths we fabricated SSPD with the strip almost twice narrower compared to the standard 100 nm and demonstrated that in middle infrared (about 3 μm wavelength) these devices have DE several times higher compared to the traditional SSPDs.
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Manova NN, Korneeva YP, Korneev AA, Slysz W, Voronov BM, Gol'tsman GN. Superconducting NbN single-photon detector integrated with quarter-wave resonator. Tech Phys Lett. 2011;37(5):469–71.
Abstract: The spectral dependence of the quantum efficiency of superconducting NbN single-photon detectors integrated with quarter-wave resonators based on Si3N4, SiO2, and SiO layers has been studied.
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Miller AJ, Lita AE, Calkins B, Vayshenker I, Gruber SM, Nam SW. Compact cryogenic self-aligning fiber-to-detector coupling with losses below one percent. Opt Express. 2011;19(10):9102–10.
Abstract: We present a compact packaging technique for coupling light from a single-mode telecommunication fiber to cryogenic single-photon sensitive devices. Our single-photon detectors are superconducting transition-edge sensors (TESs) with a collection area only a factor of a few larger than the area of the fiber core which presents significant challenges to low-loss fiber-to-detector coupling. The coupling method presented here has low loss, cryogenic compatibility, easy and reproducible assembly and low component cost. The system efficiency of the packaged single-photon counting detectors is verified by the “triplet method†of power-source calibration along with the “multiple attenuator†method that produces a calibrated single-photon flux. These calibration techniques, when used in combination with through-wafer imaging and fiber back-reflection measurements, give us confidence that we have achieved coupling losses below 1 % for all devices packaged according to the self-alignment method presented in this paper.
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Bulaevskii LN, Graf MJ, Batista CD, Kogan VG. Vortex-induced dissipation in narrow current-biased thin-film superconducting strips. Phys Rev B. 2011;83(14):9.
Abstract: A vortex crossing a thin-film superconducting strip from one edge to the other, perpendicular to the bias current, is the dominant mechanism of dissipation for films of thickness d on the order of the coherence length ξ and of width w much narrower than the Pearl length Λâ‰<ab>wâ‰<ab>ξ. At high bias currents I*<I<Ic the heat released by the crossing of a single vortex suffices to create a belt-like normal-state region across the strip, resulting in a detectable voltage pulse. Here Ic is the critical current at which the energy barrier vanishes for a single vortex crossing. The belt forms along the vortex path and causes a transition of the entire strip into the normal state. We estimate I* to be roughly Ic/3. Furthermore, we argue that such “hot†vortex crossings are the origin of dark counts in photon detectors, which operate in the regime of metastable superconductivity at currents between I* and Ic. We estimate the rate of vortex crossings and compare it with recent experimental data for dark counts. For currents below I*, that is, in the stable superconducting but resistive regime, we estimate the amplitude and duration of voltage pulses induced by a single vortex crossing.
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Edlmayr V, Harzer TP, Hoffmann R, Kiener D, Scheu C, Mitterer C. Effects of thermal annealing on the microstructure of sputtered Al2O3 coatings. J. Vac. Sci. Technol. A. 2011;29(4):8.
Abstract: The morphology and microstructure of Al2O3 thin films deposited by pulsed direct current magnetron sputtering were studied in the as-grown state and after vacuum annealing at 1000 °C for 12 h using transmission electron microscopy. For the coating deposited under low ion bombardment conditions, the film consists of small γ- and/or δ-Al2O3 grains embedded in an amorphous matrix. The grain size at the region close to the interface to the substrate was much larger than that of the remaining layer. Growth of the γ-Al2O3 phase is promoted during annealing but no transformation to α-Al2O3 was detected. For high-energetic growth conditions, clear evidence for γ-Al2O3 formation was found in the upper part of the coating with grain size much larger than for low-energetic growth, but the film was predominately amorphous at the interface region. Annealing resulted in the transformation of γ-Al2O3 to α-Al2O3, while the mainly amorphous part crystallized to γ-Al2O3.
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Ozhegov RV, Gorshkov KN, Gol'tsman GN, Kinev NV, Koshelets VP. The stability of a terahertz receiver based on a superconducting integrated receiver. Supercond Sci Technol. 2011;24(3):035003.
Abstract: We present the results of stability testing of a terahertz radiometer based on a superconducting receiver with a SIS tunnel junction as the mixer and a flux-flow oscillator as the local oscillator. In the continuum mode, the receiver with a noise temperature of 95 K at 510 GHz measured over the intermediate frequency (IF) passband of 4-8 GHz offered a noise equivalent temperature difference of 10 ± 1 mK at an integration time of 1 s. We offer a method to significantly increase the integration time without the use of complex measurement equipment. The receiver observed a strong signal over a final detection bandwidth of 4 GHz and offered an Allan time of 5 s.
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Флоря ИН, Корнеева ЮП, Корнеев АА, Гольцман ГН. Сверхпроводниковый однофотонный детектор для среднего инфракрасного диапазона на основе узких параллельных полосок. Труды МФТИ. 2011;3(2):14–7.
Abstract: Мы рассматриваем ультрабыстрый сверхпроводниковый однофотонный детектор (SSPD). SSPD представляет собой тонкопленочную наноструктуру — очень узкую и длинную полоску сверхпроводника, изогнутую в виде меандра, изготовленную из пленки NbN толщиной 4 нм, нанесенной на сапфировую подложку. SSPD хорошо сопрягается с оптоволокном и легко может быть интегрирован в полностью готовую для работы приемную систему. В стремлении продвинуться в средний ИК диапозон нам удалось разработать SSPD в виде параллельно соединенных полосок с шириной полоски всего 50 нм и сохранить при этом сверхпроводящие свойства. Эти детекторы показывают более чем на порядок большую чувствительность на длине волны 3;5 мкм, чем SSPD в виде меандра. Полученные результаты открывают путь к эффективным детекторам среднего ИК-диапазона, обладающим скоростью счета свыше 1 ГГц.
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Пентин ИВ, Смирнов КВ, Вахтомин ЮБ, Смирнов АВ, Ожегов РВ, Дивочий АВ, et al. Быстродействующий терагерцевый приемник и инфракрасный счетчик одиночных фотонов на эффекте разогрева электронов в сверхпроводниковых тонкопленочных наноструктурах. Труды МФТИ. 2011;3(2):38–42.
Abstract: Представлены результаты создания приемных систем терагерцевого диапазона (0.3-70 ТГц), обладающих рекордным быстродействием (50 пс) и высокой чувствительностью (до 5x 10^(-14) Вт/Гц^(1/2)), а также однофотонных приемных систем ближнего инфракрасного диапазона с квантовой эффективностью 25 %, уровнем темнового счета 10-1c., максимальной скоростью счета ~ 100 МГц и временным разрешением до 50 пс.
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Shangina EL, Smirnov KV, Morozov DV, Kovalyuk VV, Goltsman GN, Verevkin AA, et al. Concentration dependence of energy relaxation time in AlGaAs/GaAs heterojunctions: direct measurements. Semicond Sci Technol. 2011;26(2):025013.
Abstract: We present measurements of the energy relaxation time, τε, of electrons in a single heterojunction in a quasi-equilibrium state using microwave time-resolved spectroscopy at 4.2 K. We find the relaxation time has a power-law dependence on the carrier density of the two-dimensional electron gas, τε∝nγs with γ = 0.40 ± 0.02 for values of the carrier density, ns, from 1.6 × 1011 to 6.6 × 1011cm−2. The results are in good agreement with predictions taking into account the scattering of the carriers by both piezoelectric and deformation potential acoustic phonons. We compare these results with indirect measurements of the energy relaxation time from energy loss measurements involving Joule heating of the electron gas.
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