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Hübers H-W, Semenov A, Richter H, Birk M, Krocka M, Mair U, et al. Terahertz heterodyne receiver with a hot-electron bolometer mixer. In: Wold J, Davidson J, editors. Proc. Far-IR, Sub-mm, and mm Detector Technology Workshop.; 2002.
Abstract: During the past decade major advances have been made regarding low noise mixers for terahertz (THz) heterodyne receivers. State of the art hot-electron-bolometer (HEB) mixers have noise temperatures close to the quantum limit and require less than a µW power from the local oscillator (LO). The technology is now at a point where the performance of a practical receiver employing such mixer, rather than the figures of merit of the mixer itself, are of major concern. We have incorporated a phonon-cooled NbN HEB mixer in a 2.5 THz heterodyne receiver and investigated the performance of the receiver. This yields important information for the development of heterodyne receivers such as GREAT (German receiver for astronomy at THz frequencies aboard SOFIA)[1] and TELIS (Terahertz limb sounder), a balloon borne heterodyne receiver for atmospheric research [2]. Both are currently under development at DLR.
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Yagoubov P, Kroug M, Merkel H, Kollberg E, Schubert J, Hubers HW, et al. Hot electron bolometric mixers based on NbN films deposited on MgO substrates. In: Inst. Phys. Conf. Ser. Vol 167. Barcelona, Spain; 1999. p. 687–90.
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Kroug M, Yagoubov P, Gol'tsman G, Kollberg E. NbN quasioptical phonon cooled hot electron bolometric mixers at THz frequencies. In: Inst. Phys. Conf. Ser. Vol 1. Bristol; 1997. p. 405–8.
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Meledin D, Tong CY-E, Blundell R, Kaurova N, Smirnov K, Voronov B, et al. The sensitivity and IF bandwidth of waveguide NbN hot electron bolometer mixers on MgO buffer layers over crystalline quartz. In: Harvard university, editor. Proc. 13th Int. Symp. Space Terahertz Technol. Cambridge, MA, USA; 2002. p. 65–72.
Abstract: We have developed and characterized waveguide phonon-cooled NbN Hot Electron Bolometer (FMB) mixers fabricated from a 3-4 nm thick NbN film deposited on a 200nm thick MgO buffer layer over crystalline quartz. Double side band receiver noise temperatures of 900-1050 K at 1.035 THz, and 1300-1400 K at 1.26 THz have been measured at an intermediate frequency of 1.5 GHz. The intermediate frequency bandwidth, measured at 0.8 THz LO frequency, is 3.2 GHz at the optimal bias point for low noise receiver operation.
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Cherednichenko S, Kroug M, Khosropanah P, Adam A, Merkel H, Kolberg E, et al. A broadband terahertz heterodyne receiver with an NbN HEB mixer. In: Harward University, editor. Proc. 13th Int. Symp. Space Terahertz Technol. Cambridge, MA, USA; 2002. p. 85–95.
Abstract: We present a broadband and low noise heterodyne receiver for 1.4-1.7 THz designed for the Hershel Space Observatory. A phonon- cooled NbN HEB mixer was integrated with a normal metal double- slot antenna and an elliptical silicon lens. DSB receiver noise temperature Tr was measured from 1 GHz through 8GHz intermediate frequency band with 50 MHz instantaneous bandwidth. At 4.2 K bath temperature and at 1.6 THz LO frequency Tr is 800 K with the receiver noise bandwidth of 5 GHz. While at 2 K bath temperature Tr was as low as 700 K. At 0.6 THz and 1.1 THz a spiral antenna integrated NbN HEB mixer showed the receiver noise temperature 500 K and 800 K, though no antireflection coating was used in this case. Tr of 1100 K was achieved at 2.5 THz while the receiver noise bandwidth was 4 GHz.
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Ryabchun SA, Tretyakov IV, Finkel MI, Maslennikov SN, Kaurova NS, Seleznev VA, et al. NbN phonon-cooled hot-electron bolometer mixer with additional diffusion cooling. In: Proc. 20th Int. Symp. Space Terahertz Technol. Charlottesville, USA; 2009. p. 151–4.
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Yagubov P, Gol'tsman G, Voronov B, Seidman L, Siomash V, Cherednichenko S, et al. The bandwidth of HEB mixers employing ultrathin NbN films on sapphire substrate. In: Proc. 7th Int. Symp. Space Terahertz Technol. Charlottesville, Virginia, USA; 1996. p. 290–302.
Abstract: We report on some unusual features observed during fabrication of ultrathin NbN films with high Tc. The films were used to fabricate HEB mixers, which were evaluated for IF bandwidth measurements at 140 GHz. Ultrathin films were fabricated using reactive dc magnetron sputtering with a discharge current source. Reproducible parameters of the films are assured keeping constant the difference between the discharge voltage in pure argon, and in a gas mixture, for the same current. A maximum bandwidth of 4 GHz at optimal LO and dc bias was obtained for mixer chip based on NbN film 35 A thick with Tc = 11 K.
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Finkel MI, Maslennikov SN, Vachtomin YB, Svechnikov SI, Smirnov KV, Seleznev VA, et al. Hot electron bolometer mixer for 20 – 40 THz frequency range. In: Proc. 16th Int. Symp. Space Terahertz Technol. Göteborg, Sweden; 2005. p. 393–7.
Abstract: The developed HEB mixer was based on a 5 nm thick NbN film deposited on a GaAs substrate. The active area of the film was patterned as a 30×20 μm 2 strip and coupled with a 50 Ohm coplanar line deposited in situ. An extended hemispherical germanium lens was used to focus the LO radiation on the mixer. The responsivity of the mixer was measured in a direct detection mode in the 25÷64 THz frequency range. The noise performance of the mixer and the directivity of the receiver were investigated in a heterodyne mode. A 10.6 μm wavelength CW CO 2 laser was utilized as a local oscillator.
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Smirnov AV, Larionov PA, Finkel MI, Maslennikov SN, Voronov BM, Gol'tsman GN. NbZr films for THz phonon-cooled HEB mixers. In: Proc. 19th Int. Symp. Space Terahertz Technol. Groningen, Netherlands; 2008. p. 44–7.
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Vachtomin YB, Antipov SV, Kaurova NS, Maslennikov SN, Smirnov KV, Polyakov SL, et al. Noise temperature, gain bandwidth and local oscillator power of NbN phonon-cooled HEB mixer at terahertz frequenciess. In: Proc. 29th IRMMW / 12th THz. Karlsruhe, Germany; 2004. p. 329–30.
Abstract: We present the performances of HEB mixers based on 3.5 nm thick NbN film integrated with log-periodic spiral antenna. The double side-band receiver noise temperature values are 1300 K and 3100 K at 2.5 THz and at 3.8 THz, respectively. The gain bandwidth of the mixer is 4.2 GHz and the noise bandwidth is 5 GHz. The local oscillator power is 1-3 /spl mu/W for mixers with different active area.
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