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Verevkin, A.; Zhang, J.; Slysz, W.; Sobolewski, Roman; Lipatov, A.; Okunev, O.; Chulkova, G.; Korneev, A.; Smimov, K.; Gol'tsman, G. N. |
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Title |
Spectral sensitivity and temporal resolution of NbN superconducting single-photon detectors |
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Conference Article |
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2002 |
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Proc. 13th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 13th Int. Symp. Space Terahertz Technol. |
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105-111 |
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NbN SSPD, SNSPD |
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We report our studies on spectral sensitivity and time resolution of superconducting NbN thin film single-photon detectors (SPDs). Our SPDs exhibit an everimentally measured detection efficiencies (DE) from — 0.2% at 2=1550 nm up to —3% at lambda=405 nm wavelength for 10-nm film thickness devices and up to 3.5% at lambda=1550 nm for 3.5-nm film thickness devices. Spectral dependences of detection efficiency (DE) at 2=0.4 —3.0 pm range are presented. With variable optical delay setup, it is shown that NbN SPD potentially can resolve optical pulses with the repetition rate up to 10 GHz at least. The observed full width at the half maximum (FWHM) of the signal pulse is about 150-180 ps, limited by read-out electronics. The jitter of NbN SPD is measured to be —35 ps at optimum biasing. |
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1528 |
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Zhang, W.; Miao, W.; Zhong, J. Q.; Shi, S. C.; Hayton, D. J.; Vercruyssen, N.; Gao, J. R.; Goltsman, G. N. |
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Title |
Temperature dependence of the receiver noise temperature and IF bandwidth of superconducting hot electron bolometer mixers |
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Journal Article |
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Year |
2014 |
Publication |
Supercond. Sci. Technol. |
Abbreviated Journal |
Supercond. Sci. Technol. |
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27 |
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8 |
Pages |
085013 (1 to 5) |
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NbN HEB mixers |
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In this paper we study the temperature dependence of the receiver noise temperature and IF noise bandwidth of superconducting hot electron bolometer (HEB) mixers. Three superconducting NbN HEB devices of different transition temperatures (Tc) are measured at 0.85 THz and 1.4 THz at different bath temperatures (Tbath) between 4 K and 9 K. Measurement results demonstrate that the receiver noise temperature of superconducting NbN HEB devices is nearly constant for Tbath/Tc, less than 0.8, which is consistent with the simulation based on a distributed hot-spot model. In addition, the IF noise bandwidth appears independent of Tbath/Tc, indicating the dominance of phonon cooling in the investigated HEB devices. |
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0953-2048 |
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1358 |
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Zhang, W.; Miao, W.; Yao, Q. J.; Lin, Z. H.; Shi, S. C.; Gao, J. R.; Goltsman, G. N. |
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Spectral response and noise temperature of a 2.5 THz spiral antenna coupled NbN HEB mixer |
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Journal Article |
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2012 |
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Phys. Procedia |
Abbreviated Journal |
Phys. Procedia |
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36 |
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334-337 |
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NbN HEB mixer |
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We report on a 2.5 THz spiral antenna coupled NbN hot electron bolometer (HEB) mixers, fabricated with in-situ process. The receiver noise temperature with lowest value of 1180 K is in good agreement with calculated quantum efficiency factor as a function of bias voltage. In addition, the measured spectral response of the spiral antenna coupled NbN HEB mixer shows broad frequency coverage of 0.8-3 THz, and corrected response for optical losses, FTS, and coupling efficiency between antenna and bolometer falls with frequency due to diffraction-limited beam of lens/antenna combination. |
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1875-3892 |
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1381 |
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Beck, M.; Rousseau, I.; Klammer, M.; Leiderer, P.; Mittendorff, M.; Winnerl, S.; Helm, M.; Gol'tsman, G.N.; Demsar, J. |
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Transient increase of the energy gap of superconducting NbN thin films excited by resonant narrow-band terahertz pulses |
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Journal Article |
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2013 |
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Phys. Rev. Lett. |
Abbreviated Journal |
Phys. Rev. Lett. |
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110 |
Issue |
26 |
Pages |
267003 (1 to 5) |
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Keywords |
NbN thin films, energy gap |
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Observations of radiation-enhanced superconductivity have thus far been limited to a few type-I superconductors (Al, Sn) excited at frequencies between the inelastic scattering rate and the superconducting gap frequency 2Delta/h. Utilizing intense, narrow-band, picosecond, terahertz pulses, tuned to just below and above 2Delta/h of a BCS superconductor NbN, we demonstrate that the superconducting gap can be transiently increased also in a type-II dirty-limit superconductor. The effect is particularly pronounced at higher temperatures and is attributed to radiation induced nonthermal electron distribution persisting on a 100 ps time scale. |
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Department of Physics and Center for Applied Photonics, University of Konstanz, D-78457, Germany |
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0031-9007 |
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PMID:23848912 |
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1370 |
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Pentin, I. V.; Smirnov, A. V.; Ryabchun, S. A.; Ozhegov, R. V.; Gol’tsman, G. N.; Vaks, V. L.; Pripolzin, S. I.; Pavel’ev, D. G.; Koshurinov, Y. I.; Ivanov, A. S. |
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Semiconducting superlattice as a solid-state terahertz local oscillator for NbN hot-electron bolometer mixers |
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Journal Article |
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Year |
2012 |
Publication |
Tech. Phys. |
Abbreviated Journal |
Tech. Phys. |
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Volume |
57 |
Issue |
7 |
Pages |
971-974 |
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semiconducting superlattice frequency multiplier, NbN HEB mixers |
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We present the results of our studies of the semiconducting superlattice (SSL) frequency multiplier and its application as part of the solid state local oscillator (LO) in the terahertz heterodyne receiver based on a NbN hot-electron bolometer (HEB) mixer. We show that the SSL output power level increases as the ambient temperature is lowered to 4.2 K, the standard HEB operation temperature. |
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1063-7842 |
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1378 |
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Gurovich, B. A.; Tarkhov, M. A.; Prikhod'ko, K. E.; Kuleshova, E. A.; Komarov, D. A.; Stolyarov, V. L.; Olshanskii, E. D.; Goncharov, B. V.; Goncharova, D. A.; Kutuzov, L. V.; Domantovskii, A. G. |
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Controlled modification of superconducting properties of NbN ultrathin films under composite ion beam irradiation |
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Journal Article |
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2014 |
Publication |
Nanotechnologies in Russia |
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Nanotechnologies in Russia |
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9 |
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7 |
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386-390 |
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superconducting NbN films composite ion beam irradiation protoning |
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In this work, the results of studying the microstructure and superconducting properties of ultrathin films on the basis of NbN in the initial state and after modification by being subjecting to composite ion beam irradiation with the energy ~1–3) keV are presented. HRTEM analysis showed that the initial films on the sapphire substrate in orientation “c-cut†are characterized by a grain size essentially exceeding the film thickness, while on the other substrates the size of grains corresponds to the thickness of film. Using XPS analysis, it was shown that in the initial films the atomic ratio of Nb and N is 0.51/0.49, respectively, the percentage of oxygen being lower than 5%. For ultrathin films 5 nm in thickness, the critical temperature of transit to superconducting state (T c) is found to be ~3.6 K and the density of critical current is jc ~8MA/cm2. In the work it is experimentally determined that the irradiation of NbN films by composite ion beams leads to the controlled modification of its superconducting properties due to the process of selective substitution of nitrogen atoms on the oxygen atoms. |
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1000 |
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Korneev, A.; Korneeva, Y.; Florya, I.; Voronov, B.; Goltsman, G. |
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NbN nanowire superconducting single-photon detector for mid-infrared |
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Journal Article |
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2012 |
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Phys. Procedia |
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Phys. Procedia |
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36 |
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72-76 |
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NbN SSPD, SNSPD |
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Superconducting single-photon detectors (SSPD) is typically 100 nm-wide supercondiucting strip in a shape of meander made of 4-nm-thick film. To reduce response time and increase voltage response a parallel connection of the strips was proposed. Recently we demonstrated that reduction of the strip width improves the quantum effciency of such a detector at wavelengths longer than 1.5 μm. Being encourage by this progress in quantum effciency we improved the fabrication process and made parallel-wire SSPD with 40-nm-wide strips covering total area of 10 μm x 10 μm. In this paper we present the results of the characterization of such a parallel-wire SSPD at 10.6 μm wavelength and demonstrate linear dependence of the count rate on the light power as it should be in case of single-photon response. |
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1875-3892 |
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1382 |
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Korneev, A.; Divochiy, A.; Marsili, F.; Bitauld, D.; Fiore, A.; Seleznev, V.; Kaurova, N.; Tarkhov, M.; Minaeva, O.; Chulkova, G.; Smirnov, K.; Gaggero, A.; Leoni, R.; Mattioli, F.; Lagoudakis, K.; Benkhaoul, M.; Levy, F.; Goltsman, G. |
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Superconducting photon number resolving counter for near infrared applications |
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2008 |
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Proc. SPIE |
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Proc. SPIE |
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7138 |
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713828 (1 to 5) |
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PNR SSPD; SNSPD; Nanowire superconducting single-photon detector, ultrathin NbN film, infrared |
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We present a novel concept of photon number resolving detector based on 120-nm-wide superconducting stripes made of 4-nm-thick NbN film and connected in parallel (PNR-SSPD). The detector consisting of 5 strips demonstrate a capability to resolve up to 4 photons absorbed simultaneously with the single-photon quantum efficiency of 2.5% and negligibly low dark count rate. |
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Spie |
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Tománek, P.; Senderáková, D.; Hrabovský, M. |
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10.1117/12.818079 |
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1241 |
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Milostnaya, I.; Korneev, A.; Tarkhov, M.; Divochiy, A.; Minaeva, O.; Seleznev, V.; Kaurova, N.; Voronov, B.; Okunev, O.; Chulkova, G.; Smirnov, K.; Gol’tsman, G. |
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Superconducting single photon nanowire detectors development for IR and THz applications |
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2008 |
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J. Low Temp. Phys. |
Abbreviated Journal |
J. Low Temp. Phys. |
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151 |
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1-2 |
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591-596 |
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NbN SSPD, SNSPD |
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We present our progress in the development of superconducting single-photon detectors (SSPDs) based on meander-shaped nanowires made from few-nm-thick superconducting films. The SSPDs are operated at a temperature of 2–4.2 K (well below T c ) being biased with a current very close to the nanowire critical current at the operation temperature. To date, the material of choice for SSPDs is niobium nitride (NbN). Developed NbN SSPDs are capable of single photon counting in the range from VIS to mid-IR (up to 6 μm) with a record low dark counts rate and record-high counting rate. The use of a material with a low transition temperature should shift the detectors sensitivity towards longer wavelengths. We present state-of-the art NbN SSPDs as well as the results of our recent approach to expand the developed SSPD technology by the use of superconducting materials with lower T c , such as molybdenum rhenium (MoRe). MoRe SSPDs first were made and tested; a single photon response was obtained. |
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0022-2291 |
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1244 |
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Larrey, V.; Villegier, J. -C.; Salez, M.; Miletto-Granozio, F.; Karpov, A. |
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Processing and characterization of high Jc NbN superconducting tunnel junctions for THz analog circuits and RSFQ |
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1999 |
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IEEE Trans. Appl. Supercond. |
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9 |
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2 |
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3216-3219 |
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RSFQ, NbN, SIS |
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A generic NbN Superconducting Tunnel Junctions (STJ) technology has been developed using conventional substrates (Si and SOI-SIMOX) for making THz spectrometers including SIS receivers and RSFQ logic gates. NbN/MgO/NbN junctions with area of 1 /spl mu/m/sup 2/, Jc of 10 kA/cm/sup 2/ and low sub-gap leakage current (Vm>25 mV) are currently obtained from room temperature sputtered multilayers followed by a post-annealing at 250/spl deg/C. Using a thin MgO buffer layer deposited underneath the NbN electrodes, ensures lower NbN surface resistance values (Rs=7 /spl mu//spl Omega/) at 10 GHz and 4 K. Epitaxial NbN [100] films on MgO [100] with high gap frequency (1.4 THz) have also been achieved under the same deposition conditions at room temperature. The NbN SIS has shown good I-V photon induced steps when LO pumped at 300 GHz. We have developed an 8 levels Al/NbN multilayer process for making 1.5 THz SIS mixers (including Al antennas) on Si membranes patterned in SOI-SIMOX. Using the planarization techniques developed at the Si-MOS CEA-LETI Facility, we have also demonstrated on the possibility of extending our NbN technology to high level RSFQ circuit integration with 0.5 /spl mu/m/sup 2/ junction area, made on large area substrates (up to 8 inches). |
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