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Gershenzon EM, Gol'tsman GN, Gogidze IG, Gusev YP, Elantiev AI, Karasik BS, et al. Millimeter and submillimeter wave range mixer based on electronic heating of superconducting films in the resistive state. Sov Supercond. 1990;3(10):1582–97.
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Gershenzon EM, Goltsman G, Orlova S, Ptitsina N, Gurvich Y. Germanium hot-electron narrow-band detector. Sov Radio Engineering And Electronic Physics. 1971;16(8):1346.
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Gershenzon EM, Goltsman GN, Semenov AD, Sergeev AV. Limiting characteristic of fast superconducting bolometers. Sov Phys-Tech Phys. 1989;34:195–9.
Abstract: Теоретически и экспериментально исследовано физическое ограничение быстродействия сверхпроводящего болометра. Показано, что минимальная постоянная времени реализуется в условиях электронного разогрева и определяется процессом неупругого электрон-фонон- ного взаимодействия. Сформулированы требования кконструкции «электронного болометра» для достижения предельной чувствительности. Проведено сравнение характеристик электронного болометра и обычных болометров различных типов.
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Gershenzon EM, Gol'tsman GN, Kagane ML. Observation of free carrier resonances in p-type germanium at submillimeter wavelengths. Sov Phys Solid State. 1978;20(4):573–9.
Abstract: The spectrum of hole resonances in pure p-Ge for submillimetre in quantizing magnetic fields has been studied and identified. Measurements of photoconductivity spectra of p-Ge were made in the wave range lambda = 2-0.3 mm at temp. of 4.2-15 deg K in magnetic fields H up to 40 Measurements at various frequencies showed that the position of a series of characteristic resonances depends on the frequency of the illumination. This is in line with theoretical conclusions about the effective mass of the carriers increasing with rise in the magnetic field as a result of the interaction of the edge of the valency band with the split spin-orbital interaction of the sub 7 exp + band and the conduction band. The relative intensity of the quantum resonance lines of the free holes depends on the excitation conditions.
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Gershenzon EM, Goltsman GN. Zeeman effect in excited-states of donors in germanium. Sov Phys Semicond. 1972;6(3):509.
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Blagosklonskaya LE, Gershenzon EM, Gol’tsman GN, Elant’ev AI. Effect of a strong magnetic field on the spectrum of donors in InSb. Sov Phys Semicond. 1978;11(12):1395–7.
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Gershenzon EM, Goltsman GN, Ptitsyna NG. Investigation of excited donor states in GaAs. Sov Phys Semicond. 1974;7(10):1248–50.
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Gershenzon EM, Gershenzon ME, Goltsman GN, Lulkin A, Semenov AD, Sergeev AV. Electron-phonon interaction in ultrathin Nb films. Sov Phys JETP. 1990;70(3):505–11.
Abstract: A study was made of the heating of electrons in normal resistive states of superconducting thin Nb films. The directly determined relaxation time of the resistance of a sample and the rise of the electron temperature were used to find the electron-phonon interaction time rep,, The dependence of rep, on the mean free path of electrons re,, a 1-'demonstrated, in agreement with the theoretical predictions, that the contribution of the inelastic scattering of electrons by impurities to the energy relaxation process decreased at low temperatures and the observed temperature dependence rep, a T 2 was due to a modification of the phonon spectrum in thin fllms.
1. Much new information on the electron-phonon interaction time?;,, in thin films of normal metals and superconductors has been published recently. This information has been obtained mainly as a result of two types of measurement. One includes experiments on weak electron localization investigated by the method of quantum interference corrections to the conductivity of disordered conductors, which can be used to find the relaxation time T, of the phase of the electron wave function. In the absence of the scattering of electrons by paramagnetic impurities the relaxation time T, is associated with the most effective process of energy relaxation: T;= TL+ rep;, where T,, is the electronelectron relaxation time. At low temperatures, when the dependence T; a T is exhibited by thin disordered films, the dominant channel is that of the electron-electron relaxation and there is a lower limit to the temperature range in which rep, can be investigated.
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Gershenzon EM, Gol'tsman GN, Multanovskii VV, Ptitsina NG. Kinetics of electron and hole binding into excitons in germanium. Sov Phys JETP. 1983;57(2):369–76.
Abstract: The kinetics of binding of free carriers'into excitons under stationary and nonstationary conditions is studied by investigating the submillimeter photoconductivity of Ge in a wide range of temperatures and of excitation levels. It is shown that the absolute values and the temperature dependence of the binding cross section (o- T-'.' ) can be satisfactorily described by the cascade recombination theory. The value of o and its temperature dependence differ significantly from the cross sections, measured in the same manner, for capture by attracting small impurities. Under nonstationary conditions, just as in the case of recombination with shallow impurities, a signifi- cant role is played by the sticking of the carriers in highly excited states.
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Gershenzon EM, Gershenzon ME, Gol'tsman GN, Semenov AD, Sergeev AV. Heating of electrons in a superconductor in the resistive state by electromagnetic radiation. Sov Phys JETP. 1984;59(2):442–50.
Abstract: The effect of heating of electrons relative to phonons is observed and investigated in a superconducting film that is made resistive by current and by an external magnetic field. The effect is manifested by an increase of the film resistance under the influence of the electromagnetic radiation, and is not selective in the frequency band 10^10-10^15 Hz. The independence of the effect of frequency under conditions of strong scattering by static defects is attributed to the decisive role of electron-electron collisions in the distribution function. The experimentally obtained characteristic time of resistance variation near the superconducting transition corresponds to the relaxation time of the order parameter, while at lower temperatures and fields it corresponds to the time of the inelastic electron-phonon interaction.
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