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Gayduchenko I, Xu SG, Alymov G, Moskotin M, Tretyakov I, Taniguchi T, et al. Tunnel field-effect transistors for sensitive terahertz detection. Nat Commun. 2021;12(1):543.
Abstract: The rectification of electromagnetic waves to direct currents is a crucial process for energy harvesting, beyond-5G wireless communications, ultra-fast science, and observational astronomy. As the radiation frequency is raised to the sub-terahertz (THz) domain, ac-to-dc conversion by conventional electronics becomes challenging and requires alternative rectification protocols. Here, we address this challenge by tunnel field-effect transistors made of bilayer graphene (BLG). Taking advantage of BLG's electrically tunable band structure, we create a lateral tunnel junction and couple it to an antenna exposed to THz radiation. The incoming radiation is then down-converted by the tunnel junction nonlinearity, resulting in high responsivity (>4 kV/W) and low-noise (0.2 pW/[Formula: see text]) detection. We demonstrate how switching from intraband Ohmic to interband tunneling regime can raise detectors' responsivity by few orders of magnitude, in agreement with the developed theory. Our work demonstrates a potential application of tunnel transistors for THz detection and reveals BLG as a promising platform therefor.
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Pernice WHP, Schuck C, Minaeva O, Li M, Goltsman GN, Sergienko AV, et al. High-speed and high-efficiency travelling wave single-photon detectors embedded in nanophotonic circuits. Nat Commun. 2012;3:1325 (1 to 10).
Abstract: Ultrafast, high-efficiency single-photon detectors are among the most sought-after elements in modern quantum optics and quantum communication. However, imperfect modal matching and finite photon absorption rates have usually limited their maximum attainable detection efficiency. Here we demonstrate superconducting nanowire detectors atop nanophotonic waveguides, which enable a drastic increase of the absorption length for incoming photons. This allows us to achieve high on-chip single-photon detection efficiency up to 91% at telecom wavelengths, repeatable across several fabricated chips. We also observe remarkably low dark count rates without significant compromise of the on-chip detection efficiency. The detectors are fully embedded in scalable silicon photonic circuits and provide ultrashort timing jitter of 18 ps. Exploiting this high temporal resolution, we demonstrate ballistic photon transport in silicon ring resonators. Our direct implementation of a high-performance single-photon detector on chip overcomes a major barrier in integrated quantum photonics.
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Zhang W, Miao W, Zhong JQ, Shi SC, Hayton DJ, Vercruyssen N, et al. Temperature dependence of superconducting hot electron bolometers. In: Not published results: 24th international symposium on space terahertz technology.; 2013.
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Goltsman G, Korneev A, Izbenko V, Smirnov K, Kouminov P, Voronov B, et al. Nano-structured superconducting single-photon detectors. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 2004;520(1-3):527–9.
Abstract: NbN detectors, formed into meander-type, 10×10-μm2 area structures, based on ultrathin (down to 3.5-nm thickness) and nanometer-width (down to below 100 nm) NbN films are capable of efficiently detecting and counting single photons from the ultraviolet to near-infrared optical wavelength range. Our best devices exhibit QE >15% in the visible range and ∼10% in the 1.3–1.5-μm infrared telecommunication window. The noise equivalent power (NEP) ranges from ∼10−17 W/Hz1/2 at 1.5 μm radiation to ∼10−19 W/Hz1/2 at 0.56 μm, and the dark counts are over two orders of magnitude lower than in any semiconducting competitors. The intrinsic response time is estimated to be <30 ps. Such ultrafast detector response enables a very high, GHz-rate real-time counting of single photons. Already established applications of NbN photon counters are non-invasive testing and debugging of VLSI Si CMOS circuits and quantum communications.
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Kovalyuk V, Hartmann W, Kahl O, Kaurova N, Korneev A, Goltsman G, et al. Absorption engineering of NbN nanowires deposited on silicon nitride nanophotonic circuits. Opt Express. 2013;21(19):22683–92.
Abstract: We investigate the absorption properties of U-shaped niobium nitride (NbN) nanowires atop nanophotonic circuits. Nanowires as narrow as 20nm are realized in direct contact with Si3N4 waveguides and their absorption properties are extracted through balanced measurements. We perform a full characterization of the absorption coefficient in dependence of length, width and separation of the fabricated nanowires, as well as for waveguides with different cross-section and etch depth. Our results show excellent agreement with finite-element analysis simulations for all considered parameters. The experimental data thus allows for optimizing absorption properties of emerging single-photon detectors co-integrated with telecom wavelength optical circuits.
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Shcherbatenko M, Lobanov Y, Semenov A, Kovalyuk V, Korneev A, Ozhegov R, et al. Potential of a superconducting photon counter for heterodyne detection at the telecommunication wavelength. Opt Express. 2016;24(26):30474–84.
Abstract: Here, we report on the successful operation of a NbN thin film superconducting nanowire single-photon detector (SNSPD) in a coherent mode (as a mixer) at the telecommunication wavelength of 1550 nm. Providing the local oscillator power of the order of a few picowatts, we were practically able to reach the quantum noise limited sensitivity. The intermediate frequency gain bandwidth (also referred to as response or conversion bandwidth) was limited by the spectral band of a single-photon response pulse of the detector, which is proportional to the detector size. We observed a gain bandwidth of 65 MHz and 140 MHz for 7 x 7 microm2 and 3 x 3 microm2 devices, respectively. A tiny amount of the required local oscillator power and wide gain and noise bandwidths, along with unnecessary low noise amplification, make this technology prominent for various applications, with the possibility for future development of a photon counting heterodyne-born large-scale array.
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Elezov M, Ozhegov R, Goltsman G, Makarov V. Countermeasure against bright-light attack on superconducting nanowire single-photon detector in quantum key distribution. Opt Express. 2019;27(21):30979–88.
Abstract: We present an active anti-latching system for superconducting nanowire single-photon detectors. We experimentally test it against a bright-light attack, previously used to compromise security of quantum key distribution. Although our system detects continuous blinding, the detector is shown to be partially blindable and controllable by specially tailored sequences of bright pulses. Improvements to the countermeasure are suggested.
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Nasr MB, Minaeva O, Goltsman GN, Sergienko AV, Saleh BE, Teich MC. Submicron axial resolution in an ultrabroadband two-photon interferometer using superconducting single-photon detectors. Opt Express. 2008;16(19):15104–8.
Abstract: We generate ultrabroadband biphotons via the process of spontaneous parametric down-conversion in a quasi-phase-matched nonlinear grating that has a linearly chirped poling period. Using these biphotons in conjunction with superconducting single-photon detectors (SSPDs), we measure the narrowest Hong-Ou-Mandel dip to date in a two-photon interferometer, having a full width at half maximum (FWHM) of approximately 5.7 fsec. This FWHM corresponds to a quantum optical coherence tomography (QOCT) axial resolution of 0.85 µm. Our results indicate that a high flux of nonoverlapping biphotons may be generated, as required in many applications of nonclassical light.
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Vorobyov VV, Kazakov AY, Soshenko VV, Korneev AA, Shalaginov MY, Bolshedvorskii SV, et al. Superconducting detector for visible and near-infrared quantum emitters [Invited]. Opt Mater Express. 2017;7(2):513–26.
Abstract: Further development of quantum emitter based communication and sensing applications intrinsically depends on the availability of robust single-photon detectors. Here, we demonstrate a new generation of superconducting single-photon detectors specifically optimized for the 500–1100 nm wavelength range, which overlaps with the emission spectrum of many interesting solid-state atom-like systems, such as nitrogen-vacancy and silicon-vacancy centers in diamond. The fabricated detectors have a wide dynamic range (up to 350 million counts per second), low dark count rate (down to 0.1 counts per second), excellent jitter (62 ps), and the possibility of on-chip integration with a quantum emitter. In addition to performance characterization, we tested the detectors in real experimental conditions involving nanodiamond nitrogen-vacancy emitters enhanced by a hyperbolic metamaterial.
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Kahl O, Ferrari S, Kovalyuk V, Vetter A, Lewes-Malandrakis G, Nebel C, et al. Spectrally multiplexed single-photon detection with hybrid superconducting nanophotonic circuits. Optica. 2017;4(5):557–62.
Abstract: The detection of individual photons by superconducting nanowire single-photon detectors is an inherently binary mechanism, revealing either their absence or presence while concealing their spectral information. For multicolor imaging techniques, such as single-photon spectroscopy, fluorescence resonance energy transfer microscopy, and fluorescence correlation spectroscopy, wavelength discrimination is essential and mandates spectral separation prior to detection. Here, we adopt an approach borrowed from quantum photonic integration to realize a compact and scalable waveguide-integrated single-photon spectrometer capable of parallel detection on multiple wavelength channels, with temporal resolution below 50 ps and dark count rates below 10 Hz at 80% of the devices' critical current. We demonstrate multidetector devices for telecommunication and visible wavelengths, and showcase their performance by imaging silicon vacancy color centers in diamond nanoclusters. The fully integrated hybrid superconducting nanophotonic circuits enable simultaneous spectroscopy and lifetime mapping for correlative imaging and provide the ingredients for quantum wavelength-division multiplexing on a chip.
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