|
Records |
Links |
|
Author |
Kardakova, A.; Shishkin, A.; Semenov, A.; Goltsman, G. N.; Ryabchun, S.; Klapwijk, T. M.; Bousquet, J.; Eon, D.; Sacépé, B.; Klein, T.; Bustarret, E. |
![goto web page (via DOI) doi](https://db.rplab.ru/refbase/img/doi.gif)
|
|
Title |
Relaxation of the resistive superconducting state in boron-doped diamond films |
Type |
Journal Article |
|
Year |
2016 |
Publication |
Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
|
|
Volume |
93 |
Issue |
6 |
Pages |
064506 |
|
|
Keywords |
boron-doped diamond films, resistive superconducting state, relaxation time |
|
|
Abstract |
We report a study of the relaxation time of the restoration of the resistive superconducting state in single crystalline boron-doped diamond using amplitude-modulated absorption of (sub-)THz radiation (AMAR). The films grown on an insulating diamond substrate have a low carrier density of about 2.5×1021cm−3 and a critical temperature of about 2K. By changing the modulation frequency we find a high-frequency rolloff which we associate with the characteristic time of energy relaxation between the electron and the phonon systems or the relaxation time for nonequilibrium superconductivity. Our main result is that the electron-phonon scattering time varies clearly as T−2, over the accessible temperature range of 1.7 to 2.2 K. In addition, we find, upon approaching the critical temperature Tc, evidence for an increasing relaxation time on both sides of Tc. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher ![sorted by Publisher field, descending order (down)](https://db.rplab.ru/refbase/img/sort_desc.gif) |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
2469-9950 |
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1167 |
|
Permanent link to this record |
|
|
|
|
Author |
Tretyakov, I. V.; Finkel, M. I.; Ryabchun, S. A.; Kardakova, A. I.; Seliverstov, S. V.; Petrenko, D. V.; Goltsman, G. N. |
![goto web page (via DOI) doi](https://db.rplab.ru/refbase/img/doi.gif)
|
|
Title |
Hot-electron bolometer mixers with in situ contacts |
Type |
Journal Article |
|
Year |
2014 |
Publication |
Radiophys. Quant. Electron. |
Abbreviated Journal |
Radiophys. Quant. Electron. |
|
|
Volume |
56 |
Issue |
8-9 |
Pages |
591-598 |
|
|
Keywords |
HEB mixers |
|
|
Abstract |
We report on the latest achievements in the development of superconducting hot-electron bolometer (HEB) mixers for terahertz superheterodyne receivers. We consider application ranges of such receivers and requirements for the basic characteristics of the mixers. Main features of the mixers, such as noise temperature, gain bandwidth, noise bandwidth, and required local-oscillator power, have been improved significantly over the past few years due to intense research work, both in terms of the element fabrication quality and in terms of understanding of the physics of the processes occurring in the HEB mixers. Contacts between the superconducting bridge and the planar antenna play a key role in the mixer operation. Improvement of the quality of the contacts leads simultaneously to a decrease in the noise temperature and an increase in the gain bandwidth of a mixer. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher ![sorted by Publisher field, descending order (down)](https://db.rplab.ru/refbase/img/sort_desc.gif) |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0033-8443 |
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1170 |
|
Permanent link to this record |
|
|
|
|
Author |
Fedorov, G.; Kardakova, A.; Gayduchenko, I.; Charayev, I.; Voronov, B.M.; Finkel, M.; Klapwijk, T.M.; Morozov, S.; Presniakov, M.; Bobrinetskiy, I.; Ibragimov, R.; Goltsman, G. |
![goto web page (via DOI) doi](https://db.rplab.ru/refbase/img/doi.gif)
|
|
Title |
Photothermoelectric response in asymmetric carbon nanotube devices exposed to sub-terahertz radiation |
Type |
Journal Article |
|
Year |
2013 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
|
|
Volume |
103 |
Issue |
18 |
Pages |
181121 (1 to 5) |
|
|
Keywords |
carbon nanotubes, CNT, THz radiation, SiO2 substrate |
|
|
Abstract |
We report on the voltage response of carbon nanotube devices to sub-terahertz (THz) radiation. The devices contain carbon nanotubes (CNTs), which are over their length partially suspended and partially Van der Waals bonded to a SiO2 substrate, causing a difference in thermal contact. We observe a DC voltage upon exposure to 140 GHz radiation. Based on the observed gate voltage and power dependence, at different temperatures, we argue that the observed signal is both thermal and photovoltaic. The room temperature responsivity in the microwave to THz range exceeds that of CNT based devices reported before. Authors thank Professor P. Barbara for providing the catalyst for CNT growth and Dr. N. Chumakov and V. Rylkov for stimulating discussions. The work was supported by the RFBR (Grant No. 12-02-01291-a) and by the Ministry of Education and Science of the Russian Federation (Contract No. 14.B25.31.0007). G.F. acknowledges support of the RFBR grant 12-02-01005-a. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher ![sorted by Publisher field, descending order (down)](https://db.rplab.ru/refbase/img/sort_desc.gif) |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0003-6951 |
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1171 |
|
Permanent link to this record |
|
|
|
|
Author |
Elezov, M. S.; Semenov, A. V.; An, P. P.; Tarkhov, M. A.; Goltsman, G. N.; Kardakova, A. I.; Kazakov, A. Y. |
![goto web page (via DOI) doi](https://db.rplab.ru/refbase/img/doi.gif)
|
|
Title |
Investigating the detection regimes of a superconducting single-photon detector |
Type |
Journal Article |
|
Year |
2013 |
Publication |
J. Opt. Technol. |
Abbreviated Journal |
J. Opt. Technol. |
|
|
Volume |
80 |
Issue |
7 |
Pages |
435 |
|
|
Keywords |
SSPD, quantum efficiency |
|
|
Abstract |
The detection regimes of a superconducting single-photon detector have been investigated. A technique is proposed for determining the regions in which “pure regimes” predominate. Based on experimental data, the dependences of the internal quantum efficiency on the bias current are determined in the one-, two-, and three-photon detection regimes. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher ![sorted by Publisher field, descending order (down)](https://db.rplab.ru/refbase/img/sort_desc.gif) |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
1070-9762 |
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1172 |
|
Permanent link to this record |
|
|
|
|
Author |
Seliverstov, Sergey V.; Rusova, Anastasia A.; Kaurova, Natalya S.; Voronov, Boris M.; Goltsman, Gregory N. |
|
|
Title |
AC-biased superconducting NbN hot-electron bolometer for frequency-domain multiplexing |
Type |
Conference Article |
|
Year |
2017 |
Publication |
Proc. 28th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 28th Int. Symp. Space Terahertz Technol. |
|
|
Volume |
|
Issue |
|
Pages |
120-122 |
|
|
Keywords |
NbN HEB mixer |
|
|
Abstract |
We present the results of characterization of fast and sensitive superconducting antenna-coupled THz direct detector based on NbN hot-electron bolometer (HEB) with AC-bias. We discuss the possibility of implementation of the AC-bias for design the readout system from the multi-element arrays of HEBs using standard technique of frequency-domain multiplexing. We demonstrate experimentally that this approach does not lead to significant deterioration of the HEB sensitivity compared with the value obtained for the same detector with DC- bias. Results of a numerical calculations of the HEB responsivity at AC-bias are in a good agreement with the experiment. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher ![sorted by Publisher field, descending order (down)](https://db.rplab.ru/refbase/img/sort_desc.gif) |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1174 |
|
Permanent link to this record |
|
|
|
|
Author |
Antipov, S.; Trifonov, A.; Krause, S.; Meledin, D.; Desmaris, V.; Belitsky, V.; Gol’tsman, G. |
|
|
Title |
Gain bandwidth of NbN HEB mixers on GaN buffer layer operating at 2 THz local oscillator frequency |
Type |
Conference Article |
|
Year |
2017 |
Publication |
Proc. 28th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 28th Int. Symp. Space Terahertz Technol. |
|
|
Volume |
|
Issue |
|
Pages |
147-148 |
|
|
Keywords |
NbN HEB mixers, GaN buffer-layer, IF bandwidth |
|
|
Abstract |
In this paper, we present IF bandwidth measurement results of NbN HEB mixers, which are employing NbN thin films grown on a GaN buffer-layer. The HEB mixers were operated in the heterodyne regime at a bath temperature of approximately 4.5 K and with a local oscillator operating at a frequency of 2 THz. A quantum cascade laser served as the local oscillator and a reference synthesizer based on a BWO generator (130-160 GHz) and a semiconductor superlattice (SSL) frequency multiplier was used as a signal source. By changing the LO frequency it was possible to record the IF response or gain bandwidth of the HEB with a spectrum analyzer at the operation point, which yielded lowest noise temperature. The gain bandwidth that was recorded in the heterodyne regime at 2 THz amounts to approximately 5 GHz and coincides well with a measurement that has been performed at elevated bath temperatures and lower LO frequency of 140 GHz. These findings strongly support that by using a GaN buffer-layer the phonon escape time of NbN HEBs can be significantly lower as compared to e.g. Si substrate, thus, providing higher gain bandwidth. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher ![sorted by Publisher field, descending order (down)](https://db.rplab.ru/refbase/img/sort_desc.gif) |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1175 |
|
Permanent link to this record |
|
|
|
|
Author |
Komrakova, S.; Kovalyuk, V.; An, P.; Golikov, A.; Rybin, M.; Obraztsova, E.; Goltsman, G. |
![goto web page (via DOI) doi](https://db.rplab.ru/refbase/img/doi.gif)
|
|
Title |
Effective absorption coefficient of a graphene atop of silicon nitride nanophotonic circuit |
Type |
Conference Article |
|
Year |
2020 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
|
|
Volume |
1695 |
Issue |
|
Pages |
012135 |
|
|
Keywords |
silicon nitride O-ring resonator, ORR |
|
|
Abstract |
In this paper, we demonstrate the results of a study of the optical absorption properties of graphene integrated with silicon nitride O-ring resonator. We fabricated an array of O-ring resonators with different graphene coverage area atop. By measuring the transmission spectra of nanophotonic devices with and without graphene, we calculated the effective absorption coefficient of the graphene on a rib silicon nitride waveguide. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher ![sorted by Publisher field, descending order (down)](https://db.rplab.ru/refbase/img/sort_desc.gif) |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
1742-6588 |
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1177 |
|
Permanent link to this record |
|
|
|
|
Author |
Prokhodtsov, A.; Kovalyuk, V.; An, P.; Golikov, A.; Shakhovoy, R.; Sharoglazova, V.; Udaltsov, A.; Kurochkin, Y.; Goltsman, G. |
![goto web page (via DOI) doi](https://db.rplab.ru/refbase/img/doi.gif)
|
|
Title |
Silicon nitride Mach-Zehnder interferometer for on-chip quantum random number generation |
Type |
Conference Article |
|
Year |
2020 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
|
|
Volume |
1695 |
Issue |
|
Pages |
012118 |
|
|
Keywords |
Mach-Zehnder interferometer, MZI |
|
|
Abstract |
In this work, we experimentally studied silicon nitride Mach-Zehnder interferometer (MZI) with two directional couplers and 400 ps optical delay line for telecom wavelength 1550 nm. We achieved the extinction ratio in a range of 0.76-13.86 dB and system coupling losses of 28-44 dB, depending on the parameters of directional couplers. The developed interferometer is promising for the use in a compact random number generator for the needs of a fully integrated quantum cryptography system, where compact design, as well as high generation speed, are needed. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher ![sorted by Publisher field, descending order (down)](https://db.rplab.ru/refbase/img/sort_desc.gif) |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
1742-6588 |
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1178 |
|
Permanent link to this record |
|
|
|
|
Author |
Venediktov, I. O.; Elezov, M. S.; Prokhodtsov, A. I.; Kovalyuk, V. V.; An, P. P.; Golikov, A. D.; Shcherbatenko, M. L.; Sych, D. V.; Goltsman, G. N. |
![goto web page (via DOI) doi](https://db.rplab.ru/refbase/img/doi.gif)
|
|
Title |
Study of microheater’s phase modulation for on-chip Kennedy receiver |
Type |
Conference Article |
|
Year |
2020 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
|
|
Volume |
1695 |
Issue |
|
Pages |
012117 |
|
|
Keywords |
Mach-Zehnder interferometers, MZI |
|
|
Abstract |
In this work we describe phase modulators for several Mach-Zehnder interferometers (MZI) on silicon nitride platform for telecomm wavelength (1550 nm). We obtained current-voltage and phase-voltage curves for these modulators. MZI are needed for experimental realisation of various quantum receivers that can distinguish weak coherent states of light with extremely low error. Thermo-optical (TO) modulation is ensured by microheaters on one of the arms of MZI, which enables the change of the refractive index of the material with temperature. This approach allows to apply the necessary voltage to the golden microheaters to obtain the required phase change. For the on-chip microheaters we demonstrate the dependence of the phase shift on the voltage applied to our on-chip microheaters. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher ![sorted by Publisher field, descending order (down)](https://db.rplab.ru/refbase/img/sort_desc.gif) |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
1742-6588 |
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1179 |
|
Permanent link to this record |
|
|
|
|
Author |
Elmanov, I.; Sardi, F.; Xia, K.; Kornher, T.; Kovalyuk, V.; Prokhodtsov, A.; An, P.; Kuzin, A.; Elmanova, A.; Goltsman, G.; Kolesov, R. |
![goto web page (via DOI) doi](https://db.rplab.ru/refbase/img/doi.gif)
|
|
Title |
Development of focusing grating couplers for lithium niobate on insulator platform |
Type |
Conference Article |
|
Year |
2020 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
|
|
Volume |
1695 |
Issue |
|
Pages |
012127 |
|
|
Keywords |
grating couplers, lithium niobat |
|
|
Abstract |
In this paper, we fabricate and experimentally study focusing grating couplers for lithium niobate on an insulator photonic platform. The transmittance of a waveguide equipped with in- and out-couplers with respect to the grating period is measured with and without silicon dioxide cladding applied. Our results show the influence of silicon dioxide cladding on the efficiency and the central wavelength of grating couplers and can be used to improve grating coupling efficiency. Our study is supported by numerical simulations. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher ![sorted by Publisher field, descending order (down)](https://db.rplab.ru/refbase/img/sort_desc.gif) |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
1742-6588 |
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1180 |
|
Permanent link to this record |