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Casaburi A, Ejrnaes M, Quaranta O, Gaggero A, Mattioli F, Leoni R, et al. Experimental characterization of NbN nanowire optical detectors with parallel stripline configuration. In: J. Phys.: Conf. Ser. Vol 97. IOP Publishing; 2008. 012265 (1 to 6).
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Goltsman GN, Vachtomin YB, Antipov SV, Finkel MI, Maslennikov SN, Polyakov SL, et al. Low-noise NbN phonon-cooled hot-electron bolometer mixers for terahertz heterodyne receivers. In: Proc. 9-th WMSCI. Vol 9. International Institute of Informatics and Systemics; 2005. p. 154–9.
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Gao JR, Hajenius M, Baselmans JJA, Yang ZQ, Baryshev AM, Barends R, et al. Twin-slot antenna coupled NbN hot electron bolometer mixers for space applications. In: Proc. 9-th WMSCI. Vol 9. International Institute of Informatics and Systemics; 2005. p. 148–53.
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Loudkov D, Tong CYE, Blundell R, Kaurova N, Grishina E, Voronov B, et al. An investigation of the performance of the superconducting HEB슠mixer as a function of its RF슠embedding impedance. IEEE Trans. Appl. Supercond.. 2005;15(2):472–5.
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Zhang J, Slysz W, Verevkin A, Okunev O, Chulkova G, Korneev A, et al. Response time characterization of NbN superconducting single-photon detectors. IEEE Trans. Appl. Supercond.. 2003;13(2):180–3.
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Cherednichenko S, Yagoubov P, Il'in K, Gol'tsman G, Gershenzon E. Large bandwidth of NbN phonon-cooled hot-electron bolometer mixers. In: Proc. 27th Eur. Microwave Conf. Vol 2. IEEE; 1997. p. 972–7.
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Blundell R, Kawamura JH, Tong CE, Papa DC, Hunter TR, Gol’tsman GN, et al. A hot-electron bolometer mixer receiver for the 680-830 GHz frequency range. In: Proc. 6-th Int. Conf. Terahertz Electron. IEEE; 1998. p. 18–20.
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Korneev A, Semenov A, Vodolazov D, Gol’tsman GN, Sobolewski R. Physics and operation of superconducting single-photon devices. In: Wördenweber R, Moshchalkov V, Bending S, Tafuri F, editors. Superconductors at the Nanoscale. De Gruyter; 2017. p. 279–308.
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Gershenzon EM, Goltsman GN. Zeeman effect in excited-states of donors in germanium. Sov Phys Semicond. 1972;6(3):509.
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Gershenzon EM, Goltsman GN, Ptitsyna NG. Investigation of excited donor states in GaAs. Sov Phys Semicond. 1974;7(10):1248–50.
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