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Kitaygorsky J, Komissarov I, Jukna A, Pan D, Minaeva O, Kaurova N, et al. Dark counts in nanostructured nbn superconducting single-photon detectors and bridges. IEEE Trans Appl Supercond. 2007;17(2):275–8.
Abstract: We present our studies on dark counts, observed as transient voltage pulses, in current-biased NbN superconducting single-photon detectors (SSPDs), as well as in ultrathin (~4 nm), submicrometer-width (100 to 500 nm) NbN nanobridges. The duration of these spontaneous voltage pulses varied from 250 ps to 5 ns, depending on the device geometry, with the longest pulses observed in the large kinetic-inductance SSPD structures. Dark counts were measured while the devices were completely isolated (shielded by a metallic enclosure) from the outside world, in a temperature range between 1.5 and 6 K. Evidence shows that in our two-dimensional structures the dark counts are due to the depairing of vortex-antivortex pairs caused by the applied bias current. Our results shed some light on the vortex dynamics in 2D superconductors and, from the applied point of view, on intrinsic performance of nanostructured SSPDs.
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Kardakova AI, Coumou PCJJ, Finkel MI, Morozov DV, An PP, Goltsman GN, et al. Electron–phonon energy relaxation time in thin strongly disordered titanium nitride films. IEEE Trans Appl Supercond. 2015;25(3):1–4.
Abstract: We have measured the energy relaxation times from the electron bath to the phonon bath in strongly disordered TiN films grown by atomic layer deposition. The measured values of τ eph vary from 12 to 91 ns. Over a temperature range from 3.4 to 1.7 K, they follow T -3 temperature dependence, which are consistent with values of τ eph reported previously for sputtered TiN films. For the most disordered film, with an effective elastic mean free path of 0.35 nm, we find a faster relaxation and a stronger temperature dependence, which may be an additional indication of the influence of strong disorder on a superconductor.
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Korneev A, Korneeva Y, Florya I, Semenov A, Goltsman G. Photon switching statistics in multistrip superconducting single-photon detectors. IEEE Trans Appl Supercond. 2018;28(7):1–4.
Abstract: We study photon count statistics in superconducting single-photon detectors consisting of up to 70 narrow superconducting strips connected in parallel. Using interarrival time analysis, we demonstrate that our samples are operated in the “arm-trigger” regime and require up to seven subsequently absorbed photons to form a resistive state in the whole sample. We also performed numerical simulation of the light and dark count rates versus detector bias current, which are in good agreement with the experimental results.
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Trifonov A, Tong C-YE, Grimes P, Lobanov Y, Kaurova N, Blundell R, et al. Development of a silicon membrane-based multipixel hot electron bolometer receiver. IEEE Trans Appl Supercond. 2017;27(4):1–5.
Abstract: We report on the development of a multipixel hot electron bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin-film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 and 300 μm, respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, fed by a monolithic drilled smooth-walled horn array.
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Korneeva Y, Florya I, Vdovichev S, Moshkova M, Simonov N, Kaurova N, et al. Comparison of hot spot formation in nbn and mon thin superconducting films after photon absorption. IEEE Trans Appl Supercond. 2017;27(4):1–4.
Abstract: In superconducting single-photon detectors (SSPD), the efficiency of local suppression of superconductivity and hotspot formation is controlled by diffusivity and electron-phonon interaction time. Here, we selected a material, 3.6-nm-thick MoNx film, which features diffusivity close to those of NbN traditionally used for SSPD fabrication, but with electron-phonon interaction time an order of magnitude larger. In MoN ∞ detectors, we study the dependence of detection efficiency on bias current, photon energy, and strip width, and compare it with NbN SSPD. We observe nonlinear current-energy dependence in MoNx SSPD and more pronounced plateaus in dependences of detection efficiency on bias current, which we attribute to longer electron-phonon interaction time.
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Trifonov A, Tong C-YE, Lobanov Y, Kaurova N, Blundell R, Goltsman G. Photon absorption near the gap frequency in a hot electron bolometer. IEEE Trans Appl Supercond. 2017;27(4):1–4.
Abstract: The superconducting energy gap is a fundamental characteristic of a superconducting film, which, together with the applied pump power and the biasing setup, defines the instantaneous resistive state of the Hot Electron Bolometer (HEB) mixer at any given bias point on the I-V curve. In this paper we report on a series of experiments, in which we subjected the HEB to radiation over a wide frequency range along with parallel microwave injection. We have observed three distinct regimes of operation of the HEB, depending on whether the radiation is above the gap frequency, far below it or close to it. These regimes are driven by the different patterns of photon absorption. The experiments have allowed us to derive the approximate gap frequency of the device under test as about 585 GHz. Microwave injection was used to probe the HEB impedance. Spontaneous switching between the superconducting (low resistive) state and a quasi-normal (high resistive) state was observed. The switching pattern depends on the particular regime of HEB operation and can assume a random pattern at pump frequencies below the gap to a regular relaxation oscillation running at a few MHz when pumped above the gap.
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Korneeva Y, Sidorova M, Semenov A, Krasnosvobodtsev S, Mitsen K, Korneev A, et al. Comparison of hot-spot formation in NbC and NbN single-photon detectors. IEEE Trans Appl Supercond. 2016;26(3):1–4.
Abstract: We report an experimental investigation of the hot-spot evolution in superconducting single-photon detectors made of disordered superconducting materials with different diffusivity and energy downconversion time values, i.e., 33-nm-thick NbN and 23-nm-thick NbC films. We have demonstrated that, in NbC film, only 405-nm photons produce sufficiently large hot spot to trigger a single-photon response. The dependence of detection efficiency on bias current for 405-nm photons in NbC is similar to that for 3400-nm photons in NbN. In NbC, large diffusivity and downconversion time result in 1-D critical current suppression profile compared with the usual 2-D profile in NbN.
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Tong C-YE, Trifonov A, Shurakov A, Blundell R, Gol’tsman G. A microwave-operated hot-electron-bolometric power detector for terahertz radiation. IEEE Trans Appl Supercond. 2015;25(3):2300604 (1 to 4).
Abstract: A new class of microwave-operated THz power detectors based on the NbN hot-electron-bolometer (HEB) mixer is proposed. The injected microwave signal ( 1 GHz) serves the dual purpose of pumping the HEB element and enabling the read-out of the internal state of the device. A cryogenic amplifier amplifies the reflected microwave signal from the device and a homodyne scheme recovers the effects of the incident THz radiation. Two modes of operation have been identified, depending on the level of incident radiation. For weak signals, we use a chopper to chop the incident radiation against a black body reference and a lock-in amplifier to perform synchronous detection of the homodyne readout. The voltage measured is proportional to the incident power, and we estimate an optical noise equivalent power of 5pW/ √Hz at 0.83 THz. At higher signal levels, the homodyne circuit recovers the stream of steady relaxation oscillation pulses from the HEB device. The frequency of these pulses is in the MHz frequency range and bears a linear relationship with the incident THz radiation over an input power range of 15 dB. A digital frequency counter is used to measure THz power. The applicable power range is between 1 nW and 1 μW.
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Trifonov A, Tong C-YE, Blundell R, Ryabchun S, Gol'tsman G. Probing the stability of HEB mixers with microwave injection. IEEE Trans Appl Supercond. 2015;25(3):2300404 (1 to 4).
Abstract: Using a microwave probe as a tool, we have performed experiments aimed at understanding the origin of the output-power fluctuations in hot-electron-bolometer (HEB) mixers. We use a probe frequency of 1.5 GHz. The microwave probe picks up impedance changes of the HEB, which are examined upon demodulation of the reflected wave outside the cryostat. This study shows that the HEB mixer operates in two different regimes under a terahertz pump. At a low pumping level, strong pulse modulation is observed, as the device switches between the superconducting state and the normal state at a rate of a few megahertz. When pumped much harder, to approximate the low-noise mixer operating point, residual modulation can still be observed, showing that the HEB mixer is intrinsically unstable even in the resistive state. Based on these observations, we introduced a low-frequency termination to the HEB mixer. By terminating the device in a 50-Ω resistor in the megahertz frequency range, we have been able to improve the output-power Allan time of our HEB receiver by a factor of four to about 10 s for a detection bandwidth of 15 MHz, with a corresponding gain fluctuation of about 0.035%.
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Zhang W, Miao W, Li SL, Zhou KM, Shi SC, Gao JR, et al. Measurement of the spectral response of spiral-antenna coupled superconducting hot electron bolometers. IEEE Trans Appl Supercond. 2013;23(3):2300804.
Abstract: Measured spectral response of spiral-antenna coupled superconducting hot electron bolometers (HEBs) often drops dramatically at frequencies that are still within the frequency range of interest (e.g., ~ 5 THz). This is inconsistent with the implied low receiver noise temperatures from the same measurements. To understand this discrepancy, we exhaustively test and calibrate the thermal sources used in Fourier transform spectrometer measurements. We first investigate the absolute emission spectrum of high-pressure Hg arc lamp, then measure the spectral response of two spiral-antenna coupled NbN HEBs with a Martin-Puplett interferometer as spectrometer and 77 K blackbody as broadband signal source. The measured absolute emission spectrum of Hg arc lamp is proportional to frequency, corresponding to an equivalent blackbody temperature of 4000 K at 1 THz, 1500 K at 3 THz, and 800 K at 5 THz, respectively. Measured spectral response of spiral-antenna coupled NbN HEBs, corrected for air absorption, is nearly flat in the frequency range of 0.5-4 THz, consistent with simulated coupling efficiency between HEB and spiral-antenna. These results explain the discrepancy, and prove that spiral-antenna coupled superconducting NbN HEBs work well in a wide frequency range. In addition, this calibration method and these results are broadly applicable to other quasi-optical THz receivers.
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