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Tong C-YE, Meledin D, Loudkov D, Blundell R, Erickson N, Kawamura J, et al. A 1.5 THz Hot-Electron Bolometer mixer operated by a planar diode based local oscillator. In: IEEE MTT-S Int. Microwave Symp. Digest. Vol 2.; 2003. p. 751–4.
Abstract: We have developed a 1.5 THz superconducting NbN Hot-Electron Bolometer mixer. It is operated by an all-solid-state Local Oscillator comprising of a cascade of 4 planar doublers following an MMIC based W-band power amplifier. The threshold available pump power is estimated to be 1 /spl mu/W.
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Meledin D, Tong CY-E, Blundell R, Kaurova N, Smirnov K, Voronov B, et al. Study of the IF bandwidth of NbN HEB mixers based on crystalline quartz substrate with an MgO buffer layer. IEEE Trans Appl Supercond. 2003;13(2):164–7.
Abstract: In this paper, we present the results of IF bandwidth measurements on 3-4 nm thick NbN hot electron bolometer waveguide mixers, which have been fabricated on a 200-nm thick MgO buffer layer deposited on a crystalline quartz substrate. The 3-dB IF bandwidth, measured at an LO frequency of 0.81 THz, is 3.7 GHz at the optimal bias point for low noise receiver operation. We have also made measurements of the IF dynamic impedance, which allow us to evaluate the intrinsic electron temperature relaxation time and self-heating parameters at different bias conditions.
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Semenov AD, Hübers H-W, Richter H, Birk M, Krocka M, Mair U, et al. Superconducting hot-electron bolometer mixer for terahertz heterodyne receivers. IEEE Trans. Appl. Supercond.. 2003;13(2):168–71.
Abstract: We present recent results showing the development of superconducting NbN hot-electron bolometer mixer for German receiver for astronomy at terahertz frequencies and terahertz limb sounder. The mixer is incorporated into a planar feed antenna, which has either logarithmic spiral or double-slot configuration, and backed on a silicon lens. The hybrid antenna had almost frequency independent and symmetric radiation pattern slightly broader than expected for a diffraction limited antenna. At 2.5 THz the best 2200 K double side-band receiver noise temperature was achieved across a 1 GHz intermediate frequency bandwidth centred at 1.5 GHz. For this operation regime, a receiver conversion efficiency of -17 dB was directly measured and the loss budget was evaluated. The mixer response was linear at load temperatures smaller than 400 K. Implementation of the MgO buffer layer on Si resulted in an increased 5.2 GHz gain bandwidth. The receiver was tested in the laboratory environment by measuring a methanol emission line at 2.5 THz.
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Benford DJ, Gaidis MC, Kooi JW. Optical properties of Zitex in the infrared to submillimeter. Appl Opt. 2003;42(25):5118.
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Gol'tsman GN, Loudkov DN. Terahertz superconducting hot-electron bolometer mixers and their application in radio astronomy. Radiophys. Quant. Electron.. 2003;46(8/9):604–17.
Abstract: We review the latest developments, research, and radioastronomy applications of hot-electron bolometer (HEB) mixers operated in the terahertz waveband. The physical principles of operation of terahertz HEB mixers are presented, their manufacturing from ultrathin NbN films, the main HEB-mixer parameters and their measurement techniques are discussed, and practical terahertz radioastronomy projects based on heterodyne receivers with HEB mixers are considered.
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Гольцман ГН, Лудков ДН. Сверхпроводниковые смесители на горячих электронах терагерцового диапазона и их применение в радиоастрономии. Изв. высших учебных заведений. Радиофизика. 2003;46(8/9).
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InSb detectors technical data sheet.; 2003.
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Su MY, Carter SG, Sherwin MS. Strong-field terahertz optical mixing in excitons. Phys Rev B. 2003;67(12).
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Zwiller V, Aichele T, Seifert W, Persson J, Benson O. Generating visible single photons on demand with single InP quantum dots. Appl Phys Lett. 2003;82(10):1509–11.
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Finkel M, Vachtomin Y, Antipov S, Drakinski V, Kaurova N, Voronov B, et al. Gain bandwidth and noise temperature of NbTiN HEB mixer. In: Proc. 14th Int. Symp. Space Terahertz Technol.; 2003. p. 276–85.
Abstract: We have determined that the gain bandwidth of phonon-cooled HEB mixer employing NbTiN films deposited on MgO layer over Si substrate is limited b y the escape of phonons to the substrate. The cut-off frequencies of 1 um long devices operating at T 71, based on 3.5 nm. 4 nm and 10 nm thick films amount to 400 Mk. 300 MHz, and 100 MHz, respectivel y . The gain bandwidth of 0.13 . um long devices fabricated from 3.5 nm thick film is larger and amounts to 0.8 GIL; at the optimal operating point and to 1.5 GIL: at larger bias. The increase of the gain bandwidth from 400 MHz up to 1.5 GH: with the change of bridge length is attributed to diffusion cooling. A double sideband noise temperature of 4000 K was obtained for heterodyne receiver utilizing pilot NbTiN HEB mixer (not optimized for normal state resistance) operating at the local oscillator frequency of 2.5 THz.
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