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Shah N, Pekker D, Goldbart PM. Inherent stochasticity of superconductor-resistor switching behavior in nanowires. Phys Rev Lett. 2008;101:207001(1 to 4).
Abstract: We study the stochastic dynamics of superconductive-resistive switching in hysteretic current-biased superconducting nanowires undergoing phase-slip fluctuations. We evaluate the mean switching time using the master-equation formalism, and hence obtain the distribution of switching currents. We find that as the temperature is reduced this distribution initially broadens; only at lower temperatures does it show the narrowing with cooling naively expected for phase slips that are thermally activated. We also find that although several phase-slip events are generally necessary to induce switching, there is an experimentally accessible regime of temperatures and currents for which just one single phase-slip event is sufficient to induce switching, via the local heating it causes.
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Zhizhon Y, Majedi HA. Optoelectronic mixing in the NbN superconducting nanowire single photon detectors. In: Proc. SPIE. Vol 3786.; 2009. 9.
Abstract: In this paper, we present our experimental results on the electrically pumped optoelectronic mixing effect exhibited in a niobium nitride (NbN) superconducting nanowire. The experimental setup in order to test the mixer has been reported in detail. This superconductive nanowire optoelectronic mixer demonstrates photodetection and mixing in an integrated manner. We have explored both effects under a great variety of external conditions, such as temperature and bias current, in order to seek potential ways toward quantum optoelectronic detection and mixing by such nanowire device.
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Dauler E, Kerman A, Robinson B, Yang J, Voronov B, Goltsman G, et al. Photon-number-resolution with sub-30-ps timing using multi-element superconducting nanowire single photon detectors. J Modern Opt. 2009;56(2):364–73.
Abstract: A photon-number-resolving detector based on a four-element superconducting nanowire single photon detector is demonstrated to have sub-30-ps resolution in measuring the arrival time of individual photons. This detector can be used to characterize the photon statistics of non-pulsed light sources and to mitigate dead-time effects in high-speed photon counting applications. Furthermore, a 25% system detection efficiency at 1550 nm was demonstrated, making the detector useful for both low-flux source characterization and high-speed photon-counting and quantum communication applications. The design, fabrication and testing of this detector are described, and a comparison between the measured and theoretical performance is presented.
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Goltsman G. Quantum-photonic integrated circuits. In: Proc. IWQO.; 2019. p. 22–3.
Abstract: We show the design, a history of development as well as the most successful and promising approaches for QPICs realization based on hybrid nanophotonic-superconducting devices, where one of the key elements of such a circuit is a waveguide integrated superconducting single-photon detector (WSSPD). The potential of integration with fluorescent molecules is discussed also.
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Arutyunov KY, Ramos-Álvarez A, Semenov AV, Korneeva YP, An PP, Korneev AA, et al. Quasi-1-dimensional superconductivity in highly disordered NbN nanowires [Internet].; 2016 [cited 2024 Jul 7].arXiv:1602.07932v1 [cond-mat.supr-con]. Available from: https://arxiv.org/abs/1602.07932v1
Abstract: The topic of superconductivity in strongly disordered materials has attracted a significant attention. In particular vivid debates are related to the subject of intrinsic spatial inhomogeneity responsible for non-BCS relation between the superconducting gap and the pairing potential. Here we report experimental study of electron transport properties of narrow NbN nanowires with effective cross sections of the order of the debated inhomogeneity scales. We find that conventional models based on phase slip concept provide reasonable fits for the shape of the R(T) transition curve. Temperature dependence of the critical current follows the text-book Ginzburg-Landau prediction for quasi-one-dimensional superconducting channel Ic~(1-T/Tc)^3/2. Hence, one may conclude that the intrinsic electronic inhomogeneity either does not exist in our structures, or, if exist, does not affect their resistive state properties.
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Pekker D, Shah N, Sahu M, Bezryadin A, Goldbart PM. Stochastic dynamics of phase-slip trains and superconductive-resistive switching in current-biased nanowires. Phys. Rev. B. 2009;80:214525 (1 to 17).
Abstract: Superconducting nanowires fabricated via carbon-nanotube templating can be used to realize and study quasi-one-dimensional superconductors. However, measurement of the linear resistance of these nanowires have been inconclusive in determining the low-temperature behavior of phase-slip fluctuations, both quantal and thermal. Thus, we are motivated to study the nonlinear current-voltage characteristics in current-biased nanowires and the stochastic dynamics of superconductive-resistive switching, as a way of probing phase-slip events. In particular, we address the question: can a single phase-slip event occurring somewhere along the wire—during which the order-parameter fluctuates to zero—induce switching, via the local heating it causes? We explore this and related issues by constructing a stochastic model for the time evolution of the temperature in a nanowire whose ends are maintained at a fixed temperature. We derive the corresponding master equation as a tool for evaluating and analyzing the mean switching time at a given value of current (smaller than the depairing critical current). The model indicates that although, in general, several phase-slip events are necessary to induce switching via a thermal runaway, there is indeed a regime of temperatures and currents in which a single event is sufficient. We carry out a detailed comparison of the results of the model with experimental measurements of the distribution of switching currents, and provide an explanation for the rather counterintuitive broadening of the distribution width that is observed upon lowering the temperature. Moreover, we identify a regime in which the experiments are probing individual phase-slip events, and thus offer a way of unearthing and exploring the physics of nanoscale quantum tunneling of the one-dimensional collective quantum field associated with the superconducting order parameter.
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Korneev A, Divochiy A, Marsili F, Bitauld D, Fiore A, Seleznev V, et al. Superconducting photon number resolving counter for near infrared applications. In: Tománek P, Senderáková D, Hrabovský M, editors. Proc. SPIE. Vol 7138. Spie; 2008. 713828 (1 to 5).
Abstract: We present a novel concept of photon number resolving detector based on 120-nm-wide superconducting stripes made of 4-nm-thick NbN film and connected in parallel (PNR-SSPD). The detector consisting of 5 strips demonstrate a capability to resolve up to 4 photons absorbed simultaneously with the single-photon quantum efficiency of 2.5% and negligibly low dark count rate.
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Arutyunov KY, Ramos-Alvarez A, Semenov AV, Korneeva YP, An PP, Korneev AA, et al. Superconductivity in highly disordered NbN nanowires. Nanotechnol. 2016;27(47):47lt02 (1 to 8).
Abstract: The topic of superconductivity in strongly disordered materials has attracted significant attention. These materials appear to be rather promising for fabrication of various nanoscale devices such as bolometers and transition edge sensors of electromagnetic radiation. The vividly debated subject of intrinsic spatial inhomogeneity responsible for the non-Bardeen-Cooper-Schrieffer relation between the superconducting gap and the pairing potential is crucial both for understanding the fundamental issues of superconductivity in highly disordered superconductors, and for the operation of corresponding nanoelectronic devices. Here we report an experimental study of the electron transport properties of narrow NbN nanowires with effective cross sections of the order of the debated inhomogeneity scales. The temperature dependence of the critical current follows the textbook Ginzburg-Landau prediction for the quasi-one-dimensional superconducting channel I c approximately (1-T/T c)(3/2). We find that conventional models based on the the phase slip mechanism provide reasonable fits for the shape of R(T) transitions. Better agreement with R(T) data can be achieved assuming the existence of short 'weak links' with slightly reduced local critical temperature T c. Hence, one may conclude that an 'exotic' intrinsic electronic inhomogeneity either does not exist in our structures, or, if it does exist, it does not affect their resistive state properties, or does not provide any specific impact distinguishable from conventional weak links.
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Bell M, Sergeev A, Goltsman G, Bird J, Verevkin A. Transition-edge sensors based on superconducting nanowires [abstract]. In: Proc. APS March Meeting.; 2006. B38.00001.
Abstract: We present our experimental study of superconducting NbN nanowire-based sensor. The responsivity of the sensor is strongly affected by the superconducting transition width of the nanostructure, which, in turn, is determined by the phase slip centers (PCSs) dynamics. The fluctuations and noise properties of the sensor are also discussed, as well as the devices' behavior at high magnetic fields. The ultimate performance of the sensor and prospects of the devices will be discussed, as well.
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Rath P, Vetter A, Kovalyuk V, Ferrari S, Kahl O, Nebel C, et al. Travelling-wave single-photon detectors integrated with diamond photonic circuits: operation at visible and telecom wavelengths with a timing jitter down to 23 ps. In: Broquin J-E, Conti GN, editors. Integrated Optics: Devices, Mat. Technol. XX. Vol 9750. Spie; 2016. p. 135–42.
Abstract: We report on the design, fabrication and measurement of travelling-wave superconducting nanowire single-photon detectors (SNSPDs) integrated with polycrystalline diamond photonic circuits. We analyze their performance both in the near-infrared wavelength regime around 1600 nm and at 765 nm. Near-IR detection is important for compatibility with the telecommunication infrastructure, while operation in the visible wavelength range is relevant for compatibility with the emission line of silicon vacancy centers in diamond which can be used as efficient single-photon sources. Our detectors feature high critical currents (up to 31 μA) and high performance in terms of efficiency (up to 74% at 765 nm), noise-equivalent power (down to 4.4×10-19 W/Hz1/2 at 765 nm) and timing jitter (down to 23 ps).
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