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An P, Kovalyuk V, Golikov A, Zubkova E, Ferrari S, Korneev A, et al. Experimental optimisation of O-ring resonator Q-factor for on-chip spontaneous four wave mixing. In: J. Phys.: Conf. Ser. Vol 1124.; 2018. 051047.
Abstract: In this paper we experimentally studied the influence of geometrical parameters of the planar O-ring resonators on its Q-factor and losses. We systematically changed the gap between the bus waveguide and the ring, as well as the width of the ring. We found the highest Q = 5×105 for gap 2.0 μm and the ring width 2 μm. This work is important for further on-chip SFWM applications since the generation rate of the biphoton field strongly depends on the quality factor as Q3
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Sidorova M, Semenov A, Korneev A, Chulkova G, Korneeva Y, Mikhailov M, et al. Electron-phonon relaxation time in ultrathin tungsten silicon film [Internet].; 2018 [cited 2024 Jun 30].arXiv:1607.07321v1 [physics.ins-det]. Available from: https://arxiv.org/abs/1607.07321v1
Abstract: Using amplitude-modulated absorption of sub-THz radiation (AMAR) method, we studied electron-phonon relaxation in thin disordered films of tungsten silicide. We found a response time ~ 800 ps at critical temperature Tc = 3.4 K, which scales as minus 3 in the temperature range from 1.8 to 3.4 K. We discuss mechanisms, which can result in a strong phonon bottle-neck effect in a few nanometers thick film and yield a substantial difference between the measured time, characterizing response at modulation frequency, and the inelastic electron-phonon relaxation time. We estimate the electron-phonon relaxation time to be in the range ~ 100-200 ps at 3.4 K.
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Romanov NR, Zolotov PI, Vakhtomin YB, Divochiy AV, Smirnov KV. Electron diffusivity measurements of VN superconducting single-photon detectors. In: J. Phys.: Conf. Ser. Vol 1124.; 2018. 051032.
Abstract: The research of ultrathin vanadium nitride (VN) films as a promising candidate for superconducting single-photon detectors (SSPD) is presented. The electron diffusivity measurements are performed for such devices. Devices that were fabricated out from 9.9 nm films had diffusivity coefficient of 0.41 cm2/s and from 5.4 nm – 0.54 cm2/s. Obtained values are similar to other typical SSPD materials. The diffusivity that increases along with decreasing of the film thickness is expected to allow fabrication of the devices with improved characteristics. Fabricated VN SSPDs showed prominent single-photon response in the range 0.9-1.55 µm.
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Nikoghosyan AS, Martirosyan RM, Hakhoumian AA, Makaryan AH, Tadevosyan VR, Goltsman GN, et al. Effect of absorption on the efficiency of THz radiation generation in a nonlinear crystal placed into a waveguide. Armenian J Phys. 2018;11(4):257–62.
Abstract: The effect of THz radiation absorption on the efficiency of generation of coherent THz radiation in a nonlinear optical crystal placed into a metal rectangular waveguide is studied. The efficiency of the nonlinear conversion of optical laser radiation to the THz band is also a function of the phase-matching (PM) condition inside the nonlinear crystal. The method of partial filling of a metal waveguide with a nonlinear optical crystal is used to ensure phase matching. Phase matching was obtained by the proper choice of the thickness of the nonlinear crystal, namely the degree of partial filling of the waveguide. We have studied the THz radiation attenuation caused by the losses in both the metal walls of the waveguide and in the crystal, taking into account the dimension of the cross section of the waveguide, the degree of partial filling and its dielectric constant.
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Bandurin DA, Gayduchenko I, Cao Y, Moskotin M, Principi A, Grigorieva IV, et al. Dual origin of room temperature sub-terahertz photoresponse in graphene field effect transistors. Appl Phys Lett. 2018;112(14):141101 (1 to 5).
Abstract: Graphene is considered as a promising platform for detectors of high-frequency radiation up to the terahertz (THz) range due to its superior electron mobility. Previously, it has been shown that graphene field effect transistors (FETs) exhibit room temperature broadband photoresponse to incoming THz radiation, thanks to the thermoelectric and/or plasma wave rectification. Both effects exhibit similar functional dependences on the gate voltage, and therefore, it was difficult to disentangle these contributions in previous studies. In this letter, we report on combined experimental and theoretical studies of sub-THz response in graphene field-effect transistors analyzed at different temperatures. This temperature-dependent study allowed us to reveal the role of the photo-thermoelectric effect, p-n junction rectification, and plasmonic rectification in the sub-THz photoresponse of graphene FETs.
D.A.B. acknowledges the Leverhulme Trust for financial support. The work of D.S. was supported by Grant No. 16-19-10557 of the Russian Scientific Foundation (theoretical model). G.F., I.G., M.M., and G.G. acknowledge the Russian Science Foundation [Grant No. 14-19-01308 (MIET, cryostat upgrade) and Grant No. 17-72-30036, (MSPU, photoresponse measurements), the Ministry of Education and Science of the Russian Federation (Contract No. 14.B25.31.0007 (device fabrication) and Task No. 3.7328.2017/LS (NEP analyses)] and the Russian Foundation for Basic Research [Grant No. 15-02-07841 (device design)]. The authors are grateful to Professor M. S. Shur for helpful discussions.
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Lobanov YV, Vakhtomin YB, Pentin IV, Khabibullin RA, Shchavruk NV, Smirnov KV, et al. Characterization of the THz quantum cascade laser using fast superconducting hot electron bolometer. EPJ Web Conf. 2018;195:04004 (1 to 2).
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Fedder H, Oesterwind S, Wick M, Olbrich F, Michler P, Veigel T, et al. Characterization of electro-optical devices with low jitter single photon detectors – towards an optical sampling oscilloscope beyond 100 GHz. In: ECOC.; 2018. p. 1–3.
Abstract: We showcase an optical random sampling scope that exploits single photon counting and apply it to characterize optical transceivers. We study single photon detectors with a jitter down to 40 ps. The method can be extended beyond 100 GHz.
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Fedorov G, Gayduchenko I, Titova N, Gazaliev A, Moskotin M, Kaurova N, et al. Carbon nanotube based schottky diodes as uncooled terahertz radiation detectors. Phys Status Solidi B. 2018;255(1):1700227 (1 to 6).
Abstract: Despite the intensive development of the terahertz technologies in the last decade, there is still a shortage of efficient room‐temperature radiation detectors. Carbon nanotubes (CNTs) are considered as a very promising material possessing many of the features peculiar for graphene (suppression of backscattering, high mobility, etc.) combined with a bandgap in the carrier spectrum. In this paper, we investigate the possibility to incorporate individual CNTs into devices that are similar to Schottky diodes. The latter is currently used to detect radiation with a frequency up to 50 GHz. We report results obtained with semiconducting (bandgap of about 0.5 eV) and quasi‐metallic (bandgap of few meV) single‐walled carbon nanotubes (SWNTs). Semiconducting CNTs show better performance up to 300 GHz with responsivity up to 100 V W−1, while quasi‐metallic CNTs are shown to operate up to 2.5 THz.
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Moskotin MV, Gayduchenko IA, Goltsman GN, Titova N, Voronov BM, Fedorov GF, et al. Bolometric effect for detection of sub-THz radiation with devices based on carbon nanotubes. In: J. Phys.: Conf. Ser. Vol 1124.; 2018. 051050 (1 to 5).
Abstract: In this work we investigate the response on THz radiation of a FET device based on an individual carbon nanotube conductance channel. It was already shown, that the response of such devices can be either of diode rectification origin or of thermoelectric effect origin or of their combination. In this work we demonstrate that at 77K and 8K temperatures strong bolometric effect also makes a significant contribution to the response.
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Eletskii AV, Sarychev AK, Boginskaya IA, Bocharov GS, Gaiduchenko IA, Egin MS, et al. Amplification of a Raman scattering signal by carbon nanotubes. Dokl Phys. 2018;63(12):496–8.
Abstract: The effect of Raman scattering (RLS) signal amplification by carbon nanotubes (CNTs) was studied. Single-layered nanotubes were synthesized by the chemical vapor deposition (CVD) method using methane as a carbon-containing gas. The object of study used was water, the Raman spectrum of which is rather well known. Amplification of the Raman scattering signal by several hundred percent was attained in our work. The maximum amplification of a Raman scattering signal was shown to be achieved at an optimal density of nanotubes on a substrate. This effect was due to the scattering and screening of plasmons excited in CNTs by neighboring nanotubes. The amplification mechanism and the possibilities of optimization for this effect were discussed on the basis of the theory of plasmon resonance in carbon nanotubes.
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