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Ryabchun S, Tong C-yu E, Blundell R, Kimberk R, Gol’tsman G. Effect of microwave radiation on the stability of terahertz hot-electron bolometer mixers. In: Anwar M, DeMaria AJ, Shur MS, editors. Proc. SPIE. Vol 6373. SPIE; 2006. 63730J (1 to 5).
Abstract: We report our studies of the effect of microwave radiation, with a frequency much lower than that corresponding to the energy gap of the superconductor, on the performance of the NbN hot-electron bolometer (HEB) mixer incorporated into a THz heterodyne receiver. It is shown that exposing the HEB mixer to microwave radiation does not result in a significant rise of the receiver noise temperature and degradation of the mixer conversion gain so long as the level of microwave power is small compared to the local oscillator drive. Hence the injection of a small, but controlled amount of microwave radiation enables active compensation of local oscillator power and coupling fluctuations which can significantly degrade the stability of HEB mixer receivers.
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Gao JR, Hiajenius M, Yang ZQ, Klapwijk TM, Miao W, Shi SC, et al. Direct comparison of the sensitivity of a spiral and a twin-slot antenna coupled HEB mixer at 1.6 THz. In: Proc. 17th Int. Symp. Space Terahertz Technol.; 2006. p. 59–62.
Abstract: To make a direct comparison of the sensitivity between a spiral and a twin slot antenna coupled HEB mixer, we designed both types of mixers and fabricated them in a single processing run and on the same wafer. Both mixers have similar dimensions of NbN bridges (1.5-2 pm x0.2 pm). At 1.6 THz we obtained a nearly identical receiver noise temperature from both mixers (only 5% difference), which is in a good agreement with the simulation based on semi analytical models for both antennas. In addition, by using a bandpass filter to reduce the direct detection effect and lowering the bath temperature to 2.4 K, we measured the lowest receiver noise temperature of 700 K at 1.63 THz using the twin-slot antenna mixer.
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Rodriguez-Morales F, Zannoni R, Nicholson J, Fischetti M, Yngvesson KS, Appenzeller J. Direct and heterodyne detection of microwaves in a metallic single wall carbon nanotube. Appl Phys Lett. 2006;89(8):083502.
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Karpov A, Miller D, Rice F, Stern JA, Bumble B, LeDuc HG, et al. Development of 1.25 THz SIS mixer for Herschel Space Observatory. In: Zmuidzinas J, Holland WS, editors. Proc. SPIE. Vol 6275.; 2006. 62751.
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Baryshev A. M., Candotti M, Trappe NA. Cross-polarization characteristics of GORE-TEX slabs at band 9 frequencies.; 2006.
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Jiang L, Miao W, Zhang W, Li N, Lin ZH, Yao QJ, et al. Characterization of quasi-optical NbN phonon-cooled superconducting HEB mixers. In: Proc. 17th Int. Symp. Space Terahertz Technol.; 2006. p. 55–8.
Abstract: In this paper, we thoroughly investigate the performance of quasi-optical NbN phonon-cooled superconducting hot-electron bolometer (HEB) mixers, cryogenically cooled by a close-cycled 4-K refrigerator at 500 GI-1z and 850 GHz. The uncorrected lowest receiver noise Abstract---In temperatures measured are 800 K at 500 CHz without anti-reflection coating, and 1000 K @ 850 GHz with a 50 11M thick Mylar anti-reflection coating. The dependence of receiver noise temperature on the critical current and bath temperature of HEB mixer is also investigated here. Lifetime of quasi-optical superconducting NbN HEB mixers of different volumes, room temperature resistances, and critical temperatures are thoroughly studied. Increased room temperature resistance with time over the initial resistance changes between 1 and 1.2, and the reduced critical current with time over the initial value fluctuates slightly around 0.7 for most HEB mixers even of different volumes, room temperature resistances, and critical temperatures. The critical current degrades sharply vvhile room temperature resistance varies over 1.25.
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Jiang L, Miao W, Zhang W, Li N, Lin ZH, Yao QJ, et al. Characterization of a quasi-optical NbN superconducting HEB mixer. IEEE Trans Microwave Theory Techn. 2006;54(7):2944–8.
Abstract: In this paper, the performance of a quasi-optical NbN superconducting hot-electron bolometer (HEB) mixer, cryogenically cooled by a close-cycled 4-K refrigerator, is thoroughly investigated at 300, 500, and 850 GHz. The lowest receiver noise temperatures measured at the respective three frequencies are 1400, 900, and 1350 K, which can go down to 659, 413, and 529 K, respectively, after correcting the loss and associated noise contribution of the quasi-optical system before the measured superconducting HEB mixer. The stability of the quasi-optical superconducting HEB mixer is also investigated here. The Allan variance time measured with a local oscillator pumping at 500 GHz and an IF bandwidth of 110 MHz is 1.5 s at the dc-bias voltage exhibiting the lowest noise temperature and increases to 2.5 s at a dc bias twice that voltage.
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Brown ER, Lee AWM, Navi BS, Bjarnason JE. Characterization of a planar self-complementary square-spiral antenna in the THz region. Microwave Opt Technol Lett. 2006;48(3):524–9.
Abstract: This paper describes a compact, self-complementary square-spiral antenna on a GaAs substrate with a broadside high-directivity (~9 dB) frequency-independent pattern when coupled through a silicon hyperhemisphere. The driving-point resistance undulates between ~00 and 300Ω from 200 GHz to 1 THz—much higher than the 72Ω value from Booker's modified formula, but quite beneficial for coupling to high-impedance broadband devices
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Gao JR, Hajenius M, Tichelaar FD, Voronov B, Grishina E, Klapwijk TM, et al. Can NbN films on 3C-SiC/Si change the IF bandwidth of hot electron bolometer mixers? In: Proc. 17th Int. Symp. Space Terahertz Technol.; 2006. p. 187–9.
Abstract: We realized ultra thin NbN films sputtered grown on a 3C-SiC/Si substrate. The film with a thickness of 3.5-4.5 nm shows a 1', of 11.8 K, which is the highest I`, observed among ultra thin NbN films on different substrates. The high-resolution transmission electron microscopy (HRTEM) studies show that the film has a monocrystalline structure, confirming the epitaxial growth on the 3C-SiC. Based on a two-temperature model and input parameters from standard NbN films on Si, simulations predict that the new film can increase the IF bandwidth of a HEB mixer by about a factor of 2 in comparison to the standard films. In addition, we find standard NbN films on Si with a T c of 9.4 K have a thickness of around 5.5 nm, being thicker than expected (3.5 nm).
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Kenyon M, Day PK, Bradford CM, Bock JJ, Leduc HG. Background-limited membrane-isolated TES bolometers for far-IR/submillimeter direct-detection spectroscopy. Nucl. Instr. & Meth. Phys. Res. A. 2006;559:456–8.
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