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Heslinga, D. R.; Shafranjuk, S. E.; van Kempen, H.; Klapwijk, T. M. |
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Title ![sorted by Title field, descending order (down)](https://db.rplab.ru/refbase/img/sort_desc.gif) |
Observation of double-gap-edge Andreev reflection at Si/Nb interfaces by point-contact spectroscopy |
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Journal Article |
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1994 |
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Phys. Rev. B |
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Phys. Rev. B |
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49 |
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15 |
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10484-10494 |
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Nb, Si, Nb-Si, Nb/Si, Si/Nb, Andreev reflection, point-contact spectroscopy |
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Andreev reflection point-contact spectroscopy is performed on a bilayer consisting of 50-nm degenerately doped Si backed with Nb. Due to the short mean free path both injection into and transport across the Si layer are diffusive, in contrast to the ballistic conditions prevailing in clean metal layers. Nevertheless a large Andreev signal is observed in the point-contact characteristics, not reduced by elastic scattering in the Si layer or by interface scattering, but only limited by the transmission coefficient of the metal-semiconductor point contact. Two peaks in the Andreev reflection probability are visible, marking the values of the superconducting energy gap at the interface on the Nb and Si sides. This interpretation is supported by a method of solving the Bogolubov equations analytically using a simplified expression for the variation of the order parameter close to the interface. This observation enables a comparison with theoretical predictions of the gap discontinuity in the proximity effect. It is found that the widely used de Gennes model does not agree with the experimental data. |
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American Physical Society |
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1005 |
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Shcherbatenko, M.; Tretyakov, I.; Lobanov, Yu.; Maslennikov, S. N.; Kaurova, N.; Finkel, M.; Voronov, B.; Goltsman, G.; Klapwijk, T. M. |
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Title ![sorted by Title field, descending order (down)](https://db.rplab.ru/refbase/img/sort_desc.gif) |
Nonequilibrium interpretation of DC properties of NbN superconducting hot electron bolometers |
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2016 |
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Appl. Phys. Lett. |
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109 |
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13 |
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132602 |
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HEB mixer, contacts |
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We present a physically consistent interpretation of the dc electrical properties of niobiumnitride (NbN)-based superconducting hot-electron bolometer mixers, using concepts of nonequilibrium superconductivity. Through this, we clarify what physical information can be extracted from the resistive transition and the dc current-voltage characteristics, measured at suitably chosen temperatures, and relevant for device characterization and optimization. We point out that the intrinsic spatial variation of the electronic properties of disordered superconductors, such as NbN, leads to a variation from device to device. |
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1107 |
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Baselmans, J. J. A.; Hajenius, M.; Gao, J. R.; Klapwijk, T. M.; de Korte, P. A. J.; Voronov, B.; Gol'tsman, G. |
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Title ![sorted by Title field, descending order (down)](https://db.rplab.ru/refbase/img/sort_desc.gif) |
Noise performance of NbN hot electron bolometer mixers at 2.5 THz and its dependence on the contact resistance |
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Conference Article |
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2003 |
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Proc. 14th Int. Symp. Space Terahertz Technol. |
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Proc. 14th Int. Symp. Space Terahertz Technol. |
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11-19 |
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NbN HEB mixers |
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NbN hot electron bolometer mixers (HEBM) are at this moment the best heterodyne receivers for frequencies above 1 Thz. However, the fabrication procedure of these devices is such that the quality of the interface between the NbN superconducting film and the contact structure is not under good control. The result is a low transparency interface between the bolometer itself and the contact/antenna structure. In this paper we report a detailed experimental study on a novel idea to increase the transparency of this interface. This leads to a record sensitivity and more reproducible performance. We compare identical bolometers, coupled with a spiral antenna, with different NbN bolometer-contact pad interfaces. We find that cleaning the NbN interface alone results in an increase in the noise temperature. However, cleaning the NbN interface and adding a thin additional superconductor prior to the gold contact deposition improves the noise temperature of the HEBm with more than a factor of 2. A device with a contact pad on top of an in-situ cleaned NbN film consisting of 10 nm of NbTiN and 40 nm of gold has a DSB noise temperature of 1050 K at 2.5 THz. |
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1497 |
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Lobanov, Y.; Shcherbatenko, M.; Finkel, M.; Maslennikov, S.; Semenov, A.; Voronov, B. M.; Rodin, A. V.; Klapwijk, T. M.; Gol'tsman, G. N. |
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Title ![sorted by Title field, descending order (down)](https://db.rplab.ru/refbase/img/sort_desc.gif) |
NbN hot-electron-bolometer mixer for operation in the near-IR frequency range |
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Journal Article |
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2015 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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25 |
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3 |
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2300704 (1 to 4) |
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HEB mixer, IR, optical antenna |
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Traditionally, hot-electron-bolometer (HEB) mixers are employed for THz and “super-THz” heterodyne detection. To explore the near-IR spectral range, we propose a fiber-coupled NbN film based HEB mixer. To enhance the incident-light absorption, a quasi-antenna consisting of a set of parallel stripes of gold is used. To study the antenna effect on the mixer performance, we have experimentally studied a set of devices with different size of the Au stripe and spacing between the neighboring stripes. With use of the well-known isotherm technique we have estimated the absorption efficiency of the mixer, and the maximum efficiency has been observed for devices with the smallest pitch of the alternating NbN and NbN-Au stripes. Also, a proper alignment of the incident Eâƒ<2014>-field with respect to the stripes allows us to improve the coupling further. Studying IV-characteristics of the mixer under differently-aligned Eâƒ<2014>-field of the incident radiation, we have noticed a difference in their shape. This observation suggests that a difference exists in the way the two waves with orthogonal polarizations parallel and perpendicular Eâƒ<2014>-field to the stripes heat the electrons in the HEB mixer. The latter results in a variation in the electron temperature distribution over the HEB device irradiated by the two waves. |
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952 |
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Baselmans, J. J. A.; Hajenius, M.; Gao, J. R.; Baryshev, A.; Kooi, J.; Klapwijk, T. M.; Voronov, B.; de Korte, P.; Gol'tsman, G. |
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Title ![sorted by Title field, descending order (down)](https://db.rplab.ru/refbase/img/sort_desc.gif) |
NbN hot electron bolometer mixers: sensitivity, LO power, direct detection and stability |
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Journal Article |
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2005 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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15 |
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2 |
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484-489 |
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HEB mixers, direct detection effect, stability, Allan variance |
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We demonstrate that the performance of NbN lattice cooled hot electron bolometer mixers depends strongly on the interface quality between the bolometer and the contact structure. Both the receiver noise temperature and the gain bandwidth can be improved by a factor of 2 by cleaning the interface and adding an additional superconducting interlayer to the contact pad. Using this we obtain a double sideband receiver noise temperature of 950 K at 2.5 THz and 4.3 K, using a 0.4/spl times/4 /spl mu/m HEB mixer with a spiral antenna. At the same bias point, we obtain an IF gain bandwidth of 6 GHz. To comply with current demands on THz mixers for use in space based receivers we reduce the device size to 0.15/spl times/1 /spl mu/m and use a twin slot antenna. We report measurements of the noise temperature, LO power requirement, stability and the direct detection effect, using a mixer with a 1.6 THz twin slot antenna and a 1.462 THz solid state LO source with calibrated output power. |
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1051-8223 |
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546 |
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Gao, J. R.; Hajenius, M.; Baselmans, J. J. A.; Klapwijk, T. M.; de Korte, P. A. J.; Voronov, B.; Gol'tsman, G. |
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Title ![sorted by Title field, descending order (down)](https://db.rplab.ru/refbase/img/sort_desc.gif) |
NbN hot electron bolometer mixers with superior performance for space applications |
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Conference Article |
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2004 |
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Proc. Int. workshop on low temp. electronics |
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Proc. Int. workshop on low temp. electronics |
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11-17 |
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NbN HEB mixers, applications |
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Noordwijk |
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Armandillo, E.; Leone, B. |
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International workshop on low temperature electronics- WOLTE 6 - Noordwijk |
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1496 |
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Gao, J. R.; Hajenius, M.; Tichelaar, F. D.; Klapwijk, T. M.; Voronov, B.; Grishin, E.; Gol’tsman, G.; Zorman, C. A.; Mehregany, M. |
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Title ![sorted by Title field, descending order (down)](https://db.rplab.ru/refbase/img/sort_desc.gif) |
Monocrystalline NbN nanofilms on a 3C-SiC∕Si substrate |
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Journal Article |
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2007 |
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Appl. Phys. Lett. |
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Appl. Phys. Lett. |
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91 |
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6 |
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062504 (1 to 3) |
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NbN films, nanofilms |
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The authors have realized NbN (100) nanofilms on a 3C-SiC (100)/Si(100) substrate by dc reactive magnetron sputtering at 800°C. High-resolution transmission electron microscopy (HRTEM) is used to characterize the films, showing a monocrystalline structure and confirming epitaxial growth on the 3C-SiC layer. A film ranging in thickness from 3.4to4.1nm shows a superconducting transition temperature of 11.8K, which is the highest reported for NbN films of comparable thickness. The NbN nano-films on 3C-SiC offer a promising alternative to improve terahertz detectors. For comparison, NbN nanofilms grown directly on Si substrates are also studied by HRTEM.
The authors acknowledge S. V. Svetchnikov at National Centre for HRTEM at Delft, who prepared the specimens for HRTEM inspections. This work was supported by the EU through RadioNet and INTAS. |
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0003-6951 |
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1425 |
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Wild, W.; Kardashev, N. S.; Likhachev, S. F.; Babakin, N. G.; Arkhipov, V. Y.; Vinogradov, I. S.; Andreyanov, V. V.; Fedorchuk, S. D.; Myshonkova, N. V.; Alexsandrov, Y. A.; Novokov, I. D.; Goltsman, G. N.; Cherepaschuk, A. M.; Shustov, B. M.; Vystavkin, A. N.; Koshelets, V. P.; Vdovin, V.F.; de Graauw, T.; Helmich, F.; vd Tak, F.; Shipman, R.; Baryshev, A.; Gao, J. R.; Khosropanah, P.; Roelfsema, P.; Barthel, P.; Spaans, M.; Mendez, M.; Klapwijk, T.; Israel, F.; Hogerheijde, M.; vd Werf, P.; Cernicharo, J.; Martin-Pintado, J.; Planesas, P.; Gallego, J. D.; Beaudin, G.; Krieg, J. M.; Gerin, M.; Pagani, L.; Saraceno, P.; Di Giorgio, A. M.; Cerulli, R.; Orfei, R.; Spinoglio, L.; Piazzo, L.; Liseau, R.; Belitsky, V.; Cherednichenko, S.; Poglitsch, A.; Raab, W.; Guesten, R.; Klein, B.; Stutzki, J.; Honingh, N.; Benz, A.; Murphy, A.; Trappe, N.; Räisänen, A. |
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Title ![sorted by Title field, descending order (down)](https://db.rplab.ru/refbase/img/sort_desc.gif) |
Millimetron—a large Russian-European submillimeter space observatory |
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2009 |
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Exp. Astron. |
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Exp. Astron. |
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23 |
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1 |
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221-244 |
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Millimetron space observatory, VLBI, very long baseline interferometry |
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Millimetron is a Russian-led 12 m diameter submillimeter and far-infrared space observatory which is included in the Space Plan of the Russian Federation for launch around 2017. With its large collecting area and state-of-the-art receivers, it will enable unique science and allow at least one order of magnitude improvement with respect to the Herschel Space Observatory. Millimetron will be operated in two basic observing modes: as a single-dish observatory, and as an element of a ground-space very long baseline interferometry (VLBI) system. As single-dish, angular resolutions on the order of 3 to 12 arc sec will be achieved and spectral resolutions of up to a million employing heterodyne techniques. As VLBI antenna, the chosen elliptical orbit will provide extremely large VLBI baselines (beyond 300,000 km) resulting in micro-arc second angular resolution. |
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Jackson, B. D.; Baryshev, A. M.; de Lange, G.; Gao, J. R.; Shitov, S. V.; Iosad, N. N.; Klapwijk, T. M. |
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Title ![sorted by Title field, descending order (down)](https://db.rplab.ru/refbase/img/sort_desc.gif) |
Low-noise 1 THz superconductor-insulator-superconductor mixer incorporating a NbTiN/SiO2/Al tuning circuit |
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2001 |
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Appl. Phys. Lett. |
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79 |
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436 |
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Dorenbos, S. N.; Reiger, E. M.; Perinetti, U.; Zwiller, V.; Zijlstra, T.; Klapwijk, T. M. |
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Title ![sorted by Title field, descending order (down)](https://db.rplab.ru/refbase/img/sort_desc.gif) |
Low noise superconducting single photon detectors on silicon |
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2008 |
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Applied Physics Letters |
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Appl. Phys. Lett. |
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93 |
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13 |
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131101 |
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