|
|
Ekstrom H., Karasik B. S., Kollberg E.L., Yngvesson K.S. Conversion Gain and Noise of Niobium Superconducting Hot-Electron-Mixers. IEEE Trans. Microw. Theory Techn.. 1995;43:938–47.
Abstract: A study has been done of microwave mixing at 20 GHz using the nonlinear (power dependent) resistance of thin niobium strips in the resistive state. Our experiments give evidence that electron-heating is the main cause of the nonlinear phenomenon. Also a detailed phenomenological theory for the determination of conversion properties is presented. This theory is capable of predicting the frequency-conversion loss rather accurately for arbitrary bias by examining the I-V-characteristic. Knowing the electron temperature relaxation time, and using parameters derived from the I-V-characteristic also allows us to predict the -3-dB IF bandwidth. Experimental results are in excellent agreement with the theoretical predictions. The require ments on the mode of operation and on the film parameters for minimizing the conversion loss (and even achieving conversion gain) are discussed in some detail. Our measurements demon-strate an intrinsic conversion loss as low as 1 dB. The maximum IF frequency defined for -3-dB drop in conversion gain, is about 80 MHz. Noise measurements indicate a device output noise temperature of about 50 K and SSB mixer noise temperature below 250 K. This type of mixer is considered very promising for use in low-noise heterodyne receivers at THz frequencies.
|
|
|
|
Semenov AD, Nebosis RS, Gousev YP, Heusinger MA, Renk KF. Analysis of the nonequilibrium photoresponse of superconducting films to pulsed radiation by use of a two-temperature model. Phys Rev B. 1995;52(1):581–90.
Abstract: Photoresponse of a superconducting film in the resistive state to pulsed radiation has been studied in the framework of a model assuming that two different effective temperatures can be assigned to the quasiparticle and phonon nonequilibrium distributions. The coupled electron-phonon-substrate system is described by a system of time-dependent energy-balance differential equations for effective temperatures. An analytical solution of the system is given and calculated voltage transients are compared with experimental photoresponse signals taking into account the radiation pulse shape and the time resolution of the readout electronics. It is supposed that a resistive state (vortices, fluxons, network of intergrain junctions, hot spots, phase slip centers) provides an ultrafast connection between electron temperature changes and changes of the film resistance and thus plays a minor role in the temporal evolution of the response. In accordance with experimental observations a two-component response was revealed from simulations. The slower component corresponds to a bolometric mechanism while the fast component is connected with the relaxation of the electron temperature. Calculated photoresponse transients are presented for different ratios of the electron and phonon specific heat, radiation pulse durations and fluences, and frequency band passes of registration electronics. From the amplitude of the bolometric component we determine the radiation energy absorbed in a film. This enables us to reveal an intrinsic electron-phonon scattering time even if it is much shorter than the time resolution of readout electronics. We analyze experimental voltage transients for NbN, YBa2Cu3O7, and TlBa2Ca2Cu3O9 superconducting films and find the electron-phonon interaction times at the transition temperatures of 17, 2.5, and 1.8 ps, respectively. The values are in reasonable agreement with data of other experiments.
|
|
|
|
Karasik BS, Elantiev AI. Analysis of the noise performance of a hot-electron superconducting bolometer mixer. In: Proc. 6th Int. Symp. Space Terahertz Technol. ; 1995. p. 229–46.
Abstract: A theoretical analysis for the noise temperature of hot–electron superconducting mixer has been presented. Thecontributions of both Johnson noise and electron temperature fluctuations have been evaluated. A set of criteriaensuring low noise performance of the mixer has been stated and a simple analytic expression for the noisetemperature of the mixer device has been suggested. It has been shown that an improvement of the mixer sensitivitydoes not necessarily follow by a decrease of the bandwidth. An SSB noise temperature limit due to the intrinsic noisemechanisms has been estimated to be as low as 40–90 K for a mixer device made from Nb or NbN thin film.Furthermore, the conversion gain bandwidth can be as wide as is allowed by the intrinsic electron temperaturerelaxation time if an appropriate choice of the mixer resistance has been made. The intrinsic mixer noise bandwidthis of 3 GHz for Nb device and of 5 GHz for NbN device. An additional improvement of the theory has been madewhen a distinction between the impedance measured at high intermediate frequency (larger than the mixerbandwidth) and the mixer ohmic resistance has been taken into account.Recently obtained experimental data on Nb and NbNbolometer mixer devices are viewed in connection with thetheoretical predictions.The noise temperature limit has also been specified for the mixer device where an outdiffusion coolingmechanism rather than the electron–phonon energy relaxation determines the mixer bandwidth. A consideration ofthe noise performance of a bolometer mixer made from YBaCuO film utilizing a hot–electron effect has been done.
|
|
|
|
Ekström H, Karasik B, Kollberg E, Gol'tsman G, Gershenzon E. 350 GHz NbN hot electron bolometer mixer. In: Proc. 6th Int. Symp. Space Terahertz Technol.; 1995. p. 269–83.
Abstract: Superconducting NbN hot-electron bolometer (HEB) mixer devices have been fabricated and measured at 350 GHz. The HEB is integrated with a double dipole antenna on an extended crystalline quartz hyper hemispherical substrate lens. Heterodyne measurement gave a -3 dB bandwidth, mainly determined by the electron- phonon interaction time, of about 680 and 1000 MHz for two different films with Tc = 8.5 and 11 K respectively. The measured DSB receiver noise temperature is around 3000 K at 800 MHz IF frequency. The main contribution to the output noise from the device is due to electron temperature fluctuations with the equivalent output noise temperature TFL-100 K. TH, has the same frequency dependence as the IF response. The contribution from Johnson noise is of the order of T. The RF coupling loss is estimated to be = 6 dB. The film with lower Tc, had an estimated intrinsic low-frequency conversion loss = 7 dB, while the other film had a conversion loss as high as 14 dB. The difference in intrinsic conversion loss is explained by less uniform absorption of radiation. Measurements of the small signal impedance shows a transition of the output impedance from the DC differential resistance Rd=dV/dI in the low frequency limit to the DC resistance R 0 =Uoff 0 in the bias point for frequencies above 3 GHz. We judge that the optimum shape of the IV-characteristic is more easily obtained at THz frequencies where the main restriction in performance should come from problems with the RF coupling.
|
|
