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Gershenzon EM, Gol'tsman GN, Semenov AD, Sergeev AV. Heating of electrons in resistive state of superconducting films. Detectors, mixers and switches. In: Progress in High Temperature Superconductivity. Vol 32.; 1992. p. 190–5.
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Gershenzon EM, Gershenzon ME, Gol'tsman GN, Semenov AD, Sergeev AV. Heating of electrons in a superconductor in the resistive state by electromagnetic radiation. Sov Phys JETP. 1984;59(2):442–50.
Abstract: The effect of heating of electrons relative to phonons is observed and investigated in a superconducting film that is made resistive by current and by an external magnetic field. The effect is manifested by an increase of the film resistance under the influence of the electromagnetic radiation, and is not selective in the frequency band 10^10-10^15 Hz. The independence of the effect of frequency under conditions of strong scattering by static defects is attributed to the decisive role of electron-electron collisions in the distribution function. The experimentally obtained characteristic time of resistance variation near the superconducting transition corresponds to the relaxation time of the order parameter, while at lower temperatures and fields it corresponds to the time of the inelastic electron-phonon interaction.
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Sergeev A, Semenov A, Trifonov V, Karasik B, Gol'tsman G, Gershenzon E. Heat transfer in YBaCuO thin film/sapphire substrate system. J Supercond. 1994;7(2):341–4.
Abstract: The thermal boundary resistance at the YBaCuO thin film/Al2O3 substrate interface was investigated. The transparency for thermal phonons incident on the interface as well as for phonons moving from the substrate was determined. We have measured a transient voltage response of current-biased films to continuously modulated radiation. The observed knee in the modulation frequency dependence of the response reflects the crossover from the diffusion regime to the contact resistance regime of the heat transfer across the interface. The values of transparency were independently deduced both from the phonon escape time and from the time of phonon return to the film which were identified with peculiarities in the frequency dependence. The results are much more consistent with the acoustic mismatch theory than the diffuse mismatch model.
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Semenov AD, Goghidze IG, Gol’tsman GN, Sergeev AV, Gershenzon EM. Evidence for the spectral dependence of nonequilibrium picosecond photoresponse of YBaCuO thin films. Appl Phys Lett. 1993;63(5):681–3.
Abstract: The transient voltage photoresponse of current biased YBaCuO thin films to 20 ps laser pulses of 0.63 and 1.54 μm wavelengths is measured for temperatures around the superconducting transition region. The fast picosecond decay of the response is followed by a slow nanosecond relaxation which is associated with the bolometric effect. The magnitude of the fast component of the response varies in proportion to the square root of wavelength that plausibly reflects multiplication processes of photoexcited electrons via electron–electron scattering and interaction with high energy phonons.
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Sergeev A, Karasik BS, Ptitsina NG, Chulkova GM, Il'in KS, Gershenzon EM. Electron–phonon interaction in disordered conductors. Phys Rev B Condens Matter. 1999;263-264:190–2.
Abstract: The electron–phonon interaction is strongly modified in conductors with a small value of the electron mean free path (impure metals, thin films). As a result, the temperature dependencies of both the inelastic electron scattering rate and resistivity differ significantly from those for pure bulk materials. Recent complex measurements have shown that modified dependencies are well described at K by the electron interaction with transverse phonons. At helium temperatures, available data are conflicting, and cannot be described by an universal model.
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Il'in KS, Karasik BS, Ptitsina NG, Sergeev AV, Gol'tsman GN, Gershenzon EM, et al. Electron-phonon-impurity interference in thin NbC films: electron inelastic scattering time and corrections to resistivity. In: Czech. J. Phys. Vol 46.; 1996. p. 857–8.
Abstract: Complex study of transport properties of impure NbC films with the electron mean free pathl=0.6–13 nm show the crucial role of the electron-phonon-impurity interference (EPII). In the temperature range 20–70 K we found the interference correction to resistivity proportional to T2 and to the residual resistivity of the film. Using the comprehensive theory of EPII, we determine the electron coupling with transverse phonons and calculate the electron inelastic scattering time. Direct measurements of the inelastic electron scattering time using a response to a high-frequency amplitude modulated cw radiation agree well with the theory.
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Gershenzon EM, Gershenzon ME, Goltsman GN, Lulkin A, Semenov AD, Sergeev AV. Electron-phonon interaction in ultrathin Nb films. Sov Phys JETP. 1990;70(3):505–11.
Abstract: A study was made of the heating of electrons in normal resistive states of superconducting thin Nb films. The directly determined relaxation time of the resistance of a sample and the rise of the electron temperature were used to find the electron-phonon interaction time rep,, The dependence of rep, on the mean free path of electrons re,, a 1-'demonstrated, in agreement with the theoretical predictions, that the contribution of the inelastic scattering of electrons by impurities to the energy relaxation process decreased at low temperatures and the observed temperature dependence rep, a T 2 was due to a modification of the phonon spectrum in thin fllms.
1. Much new information on the electron-phonon interaction time?;,, in thin films of normal metals and superconductors has been published recently. This information has been obtained mainly as a result of two types of measurement. One includes experiments on weak electron localization investigated by the method of quantum interference corrections to the conductivity of disordered conductors, which can be used to find the relaxation time T, of the phase of the electron wave function. In the absence of the scattering of electrons by paramagnetic impurities the relaxation time T, is associated with the most effective process of energy relaxation: T;= TL+ rep;, where T,, is the electronelectron relaxation time. At low temperatures, when the dependence T; a T is exhibited by thin disordered films, the dominant channel is that of the electron-electron relaxation and there is a lower limit to the temperature range in which rep, can be investigated.
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Gol’tsman GN, Semenov AD, Sergeev AV, Aksaev EE, Gogidze IG, Gershenzon EM. Electron-phonon interaction in thin YBaCuO films and fast detectors. In: Meissner M, Pohl RO, editors. Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences. Vol 112.; 1993. p. 184–5.
Abstract: The thin. YBaCuO film response to laser and submillimeter radiation demonstrates the picosecond nonequilibrium peak on the nanosecond bolometric background. Experimental data give an evidence for the spectral dependence of picosecond photoresponse probably due to a poor efficiency of electron multiplication processes. Presented results prove an availability of fast YBaCuO thin film detector.
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Gousev YP, Semenov AD, Gol'tsman GN, Sergeev AV, Gershenzon EM. Electron-phonon interaction in disordered NbN films. Phys B Condens Mat. 1994;194-196:1355–6.
Abstract: Electron-phonon interaction time has been investigated in disordered films of NbN. A temperatures below 5.5 K tau_eph ~ T -1"6 which is attributed to the renormalisation of phonon spectrum in thin films.
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Ptitsina NG, Chulkova GM, Il’in KS, Sergeev AV, Pochinkov FS, Gershenzon EM, et al. Electron-phonon interaction in disordered metal films: The resistivity and electron dephasing rate. Phys Rev B. 1997;56(16):10089–96.
Abstract: The temperature dependence of the resistance of films of Al, Be, and NbC with small values of the electron mean free path l=1.5–10nm has been measured at 4.2–300 K. The resistance of all the films contains a T2 contribution that is proportional to the residual resistance; this contribution has been attributed to the interference between the elastic electron scattering and the electron-phonon scattering. Fitting the data to the theory of the electron-phonon-impurity interference (M. Yu. Reiser and A. V. Sergeev, Zh. Eksp. Teor. Fiz. 92, 224 (1987) [Sov. Phys. JETP 65, 1291 (1987)]), we obtain constants of interaction of the electrons with transverse phonons, and estimate the contribution of this interaction to the electron dephasing rate in thin films of Au, Al, Be, Nb, and NbC. Our estimates are in a good agreement with the experimental data on the inelastic electron-phonon scattering in these films. This indicates that the interaction of electrons with transverse phonons controls the electron-phonon relaxation rate in thin-metal films over a broad temperature range.
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