|
|
Gershenzon EM, Gol'tsman GN, Dzardanov AL, Elant'ev AI, Zorin MA, Markin AG, et al. S-N switching of niobium and YBCO films: limit time and perspective of fast key element creation. Sverkhprovodimost': Fizika, Khimiya, Tekhnika. 1992;5(12):2386–402.
Abstract: A study was made on processes of switching of thin niobium film strips between superconducting and normal states under the effect of optical radiation pulse and voltage step. The results are described satisfactorily by the model of spatial homogeneous electron heating. It is shown that limiting switching times can be equal to several shares of nanosecond at 4.2 K. Preliminary results for YBa2Cu3O-7-x films are presented. Prospects and advantages of creation of ducting structures of narrow streps, are discussed.
|
|
|
|
Gershenzon EM, Gol'tsman GN, Emtsev VV, Mashovets TV, Ptitsyna NG, Ryvkin SM. Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium. JETP Lett. 1971;14(6):241.
|
|
|
|
Gershenzon EM, Gol'tsman GN, Potapov VD, Sergeev AV. Restriction of microwave enhancement of superconductivity in impure superconductors due to electron-electron interaction. Phys B Condens Mat. 1991;169(1-4):629–30.
Abstract: Transition from microwave enhancement of supercurrent to superconductivity suppression is investigated in impure superconductors. It is demonstrated that frequency range of enhancement effect narrows with the decrease of electron mean free path, ℓ, and at ℓ⩽1nm electron heating is observed in the whole frequency range. Dependences of frequency boundaries on ℓ are explained by taking into account strong electron-electron interaction in impure metals.
|
|
|
|
Gershenzon EM, Gol'tsman GN, Potapov VD, Sergeev AV. Restriction of microwave enhancement of superconductivity in impure superconductors due to electron-electron interaction. Solid State Communications. 1990;75(8):639–41.
Abstract: Transition from microwave enhancement of supercurrent to superconductivity suppression is investigated in impure superconductors. It is demonstrated that the frequency range of the enhancement effect narrows with the decrease of the electron mean free path, l, and at l ⩽ 1 nm electron heating is observed in the whole frequency range. Dependences of frequency boundaries on l are explained by taking into account strong electron-electron interaction in impure metals.
|
|
|
|
Zhang J, Slysz W, Verevkin A, Okunev O, Chulkova G, Korneev A, et al. Response time characterization of NbN superconducting single-photon detectors. IEEE Trans. Appl. Supercond.. 2003;13(2):180–3.
Abstract: We report our time-resolved measurements of NbN-based superconducting single-photon detectors. The structures are meander-type, 10-nm thick, and 200-nm wide stripes and were operated at 4.2 K. We have shown that the NbN devices can count single-photon pulses with below 100-ps time resolution. The response signal pulse width was about 150 ps, and the system jitter was measured to be 35 ps.
|
|
|
|
Gousev YP, Gol'tsman GN, Karasik BS, Gershenzon EM, Semenov AD, Barowski HS, et al. Quasioptical superconducting hot electron bolometer for submillmeter waves. Int J of Infrared and Millimeter Waves. 1996;17(2):317–31.
Abstract: We report on a superconducting hot electron bolometer coupled to radiation via a broadband antenna. The bolometer, a structured NbN film, was patterned on a thin dielectric membrane between terminals of a gold slotline antenna. We investigated the response to submillimeter radiation (wave-lengths ∼ 0.1 mm to 0.7 mm) in the fundamental Gaussian mode. We found that the directivity of the antenna was constant within a factor of 2.5 through the whole experimental range. The noise equivalent power of the bolometer at 119 µm was ∼ 3 · 10−13 W/Hz1/2; a time constant of ∼ 160 ps was estimated.
|
|
|
|
Yagoubov P, Gol'tsman G, Voronov B, Svechnikov S, Cherednichenko S, Gershenzon E, et al. Quasioptical phonon-cooled NbN hot-electron bolometer mixer at THz frequencies. In: Proc. 7th Int. Symp. Space Terahertz Technol.; 1996. p. 303–17.
Abstract: In our experiments we tested phonon-cooled hot-electron bolometer (HEB) quasioptical mixer based on spiral antenna designed for 0.5-1.2 THz frequency band and fabricated on sapphire, Si-coated sapphire and high resistivity silicon substrates. HEB devices were produced from thin superconducting NbN film 3.5-6 nm thick with the critical temperature of about 11-12 K. For these devices we achieved the receiver noise temperature T R (DSB) = 3000 K in the 500-700 GHz frequency range and an IF bandwidth of 3-4 GHz. Prelimanary measurements at frequencies 1-1.2 THz resulted the receiver noise temperature about 9000 K (DSB).
|
|
|
|
Svechnikov S, Verevkin A, Voronov B, Menschikov E, Gershenzon E, Gol'tsman G. Quasioptical phonon-cooled NbN hot electron bolometer mixers at 0.5-1.1 THz. In: Proc. 9th Int. Symp. Space Terahertz Technol.; 1998. p. 45–51.
Abstract: The noise performance of a receiver incorporating spiral antenna coupled NbN phonon-cooled superconducting hot electron bolometric mixer is measured from 450 GHz to 1200 GHz. The mixer element is thin (thickness nm) NbN 1.5 pm wide and 0.2 i.um long film fabricated by lift-off e-beam lithography on high-resistive silicon substrate. The noise of the receiver temperature is 1000 K at 800-900 GHz, 1200 K at 950 GHz, and 1600 K at 1.08 THz. The required (absorbed) local-oscillator power is —20 nW.
|
|
|
|
Yazoubov P, Kroug M, Merkel H, Kollberg E, Gol'tsman G, Lipatov A, et al. Quasioptical NbN phonon-cooled hot electron bolometric mixers with low optimal local oscillator power. In: Proc. 9th Int. Symp. Space Terahertz Technol.; 1998. p. 131–40.
Abstract: In this paper, the noise perform.ance of NIN based phonon-cooled Hot Electron Bolometric (HEB) quasioptical mixers is investigated in the 0.55-1.1 THz frequency range. The best results of the DSB noise temperature are: 500 K at 640 GHz, 600 K at 750 GHz, 850 K at 910 GHz and 1250 K at 1.1 THz. The water vapor in the signal path causes a significant contribution to the measured noise temperature around 1.1 THz. The required LO power is typically about 60 nW. The frequency response of the spiral antenna+lens system is measured using a Fourier Transform Spectrometer with the HEB operating in a detector mode.
|
|
|
|
Il'in KS, Currie M, Lindgren M, Milostnaya II, Verevkin AA, Gol'tsman GN, et al. Quantum efficiency and time-domain response of superconducting NbN hot-electron photodetectors. IEEE Trans Appl Supercond. 1999;9(2):3338–41.
Abstract: We report our studies on the response of ultrathin superconducting NbN hot-electron photodetectors. We have measured the photoresponse of few-nm-thick, micron-size structures, which consisted of single and multiple microbridges, to radiation from the continuous-wave semiconductor laser and the femtosecond Ti:sapphire laser with the wavelength of 790 nm and 400 nm, respectively. The maximum responsivity was observed near the film's superconducting transition with the device optimally current-biased in the resistive state. The responsivity of the detector, normalized to its illuminated area and the coupling factor, was 220 A/W(3/spl times/10/sup 4/ V/W), which corresponded to a quantum efficiency of 340. The responsivity was wavelength independent from the far infrared to the ultraviolet range, and was at least two orders of magnitude higher than comparable semiconductor optical detectors. The time constant of the photoresponse signal was 45 ps, when was measured at 2.15 K in the resistive (switched) state using a cryogenic electro-optical sampling technique with subpicosecond resolution. The obtained results agree very well with our calculations performed using a two-temperature model of the electron heating in thin superconducting films.
|
|
