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Hübers H-W, Schubert J, Krabbe A, Birk M, Wagner G, Semenov A, et al. Parylene anti-reflection coating of a quasi-optical hot-electron-bolometric mixer at terahertz frequencies. Infrared Physics & Technology. 2001;42(1):41–7.
Abstract: Parylene C was investigated as anti-reflection coating for silicon at terahertz frequencies. Measurements with a Fourier-transform spectrometer show that the transmittance of pure silicon can be improved by about 30% when applying a layer of Parylene C with a quarter wavelength optical thickness. The 10% bandwidth of this coating extends from 1.5 to 3 THz for a center frequency of 2.3–2.5 THz, where the transmittance is constant. Heterodyne measurements demonstrate that the noise temperature of a hot-electron-bolometric mixer can be reduced significantly by coating the silicon lens of the hybrid antenna with a quarter wavelength Parylene C layer. Compared to the same mixer with an uncoated lens the improvement is about 30% at a frequency of 2.5 THz.
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Antipov SV, Svechnikov SI, Smirnov KV, Vakhtomin YB, Finkel MI, Goltsman GN, et al. Noise temperature of quasioptical NbN hot electron bolometer mixers at 900 GHz. Physics of Vibrations. 2001;9(4):242–5.
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Svechnikov SI, Antipov SV, Vakhtomin YB, Goltsman GN, Gershenzon EM, Cherednichenko SI, et al. Conversion and noise bandwidths of terahertz NbN hot-electron bolometer mixers. Physics of Vibrations. 2001;9(3):205–10.
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Semenov AD, Gol’tsman GN. Nonthermal mixing mechanism in a diffusion-cooled hot-electron detector. J Appl Phys. 2000;87(1):502–10.
Abstract: We present an analysis of a diffusion-cooled hot-electron detector fabricated from clean superconducting material with low transition temperature. The distinctive feature of a clean material, i.e., material with large electron mean free path, is a relatively weak inelastic electron scattering that is not sufficient for the establishment of an elevated thermodynamic electron temperature when the detector is subjected to irradiation. We propose an athermal model of a diffusion-cooled detector that relies on suppression of the superconducting energy gap by the actual dynamic distribution of excess quasiparticles. The resistive state of the device is caused by the electric field penetrating into the superconducting bridge from metal contacts. The dependence of the penetration length on the energy gap delivers the detection mechanism. The sources of the electric noise are equilibrium fluctuations of the number of thermal quasiparticles and frequency dependent shot noise. Using material parameters typical for A1, we evaluate performance of the device in the heterodyne regime at terahertz frequencies. Estimates show that the mixer may have a noise temperature of a few quantum limits and a bandwidth of a few tens of GHz, while the required local oscillator power is in the μW range due to ineffective suppression of the energy gap by quasiparticles with high energies.
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Gerecht E, Musante CF, Zhuang Y, Yngvesson KS, Gol’tsman GN, Voronov BM, et al. NbN hot electron bolometric mixerss—a new technology for low-noise THz receivers. IEEE Trans Appl Supercond. 1999;47(12):2519–27.
Abstract: New advances in hot electron bolometer (HEB) mixers have recently resulted in record-low receiver noise temperatures at terahertz frequencies. We have developed quasi-optically coupled NbN HEB mixers and measured noise temperatures up to 2.24 THz, as described in this paper. We project the anticipated future performance of such receivers to have even lower noise temperature and local-oscillator power requirement as well as wider gain and noise bandwidths. We introduce a proposal for integrated focal plane arrays of HEB mixers that will further increase the detection speed of terahertz systems.
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Gol’tsman GN, Gershenzon EM. Phonon-cooled hot-electron bolometric mixer: overview of recent results. Appl Supercond. 1999;6(10-12):649–55.
Abstract: The paper presents an overview of recent results for NbN phonon-cooled hot electron bolometric (HEB) mixers. The noise temperature of the receivers based on both quasioptical and waveguide versions of HEB mixer has crossed the level of 1 K·GHz−1 at 430 GHz (410 K) and 600–650 GHz (480 K) and is close to this level at 820 GHz (1100 K) and 900 GHz (980 K). The gain bandwidth measured for quasioptical HEB mixer at 620 GHz reached 4 GHz and the noise temperature bandwidth was almost 8 GHz. Local oscillator power requirements are about 1 μW for mixers made by photolithography and are about 100 nW for mixers made by e-beam lithography. The studies in terahertz receivers based on HEB superconducting mixers now present a dynamic, rapidly developing field.
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Tong CE, Blundell R, Papa DC, Smith M, Kawamura J, Gol'tsman G, et al. An all solid-state superconducting heterodyne receiver at terahertz frequencies. IEEE Microw Guid Wave Lett. 1999;9(9):366–8.
Abstract: A superconducting hot-electron bolometer mixer-receiver operating from 1 to 1.26 THz has been developed. This heterodyne receiver employs two solid-state local oscillators each consisting of a Gunn oscillator followed by two stages of varactor frequency multiplication. The measured receiver noise temperature is 1350 K at 1.035 THz and 2700 K at 1.26 THz. This receiver demonstrates that tunable solid-state local oscillators, supplying only a few micro-watts of output power, can be used in terahertz receiver applications.
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Gerecht E, Musante CF, Jian H, Yngvesson KS, Dickinson J, Waldman J, et al. New results for NbN phonon-cooled hot electron bolometric mixers above 1 THz. IEEE Trans Appl Supercond. 1999;9(2):4217–20.
Abstract: NbN Hot Electron Bolometric (HEB) mixers have produced promising results in terms of DSB receiver noise temperature (2800 K at 1.56 THz). The LO source for these mixers is a gas laser pumped by a CO/sub 2/ laser and the device is quasi-optically coupled through an extended hemispherical lens and a self-complementary log-periodic toothed antenna. NbN HEBs do not require submicron dimensions, can be operated comfortably at 4.2 K or higher, and require LO power of about 100-500 nW. IF noise bandwidths of 5 GHz or greater have been demonstrated. The DC bias point is also not affected by thermal radiation at 300 K. Receiver noise temperatures below 1 THz are typically 450-600 K and are expected to gradually approach these levels above 1 THz as well. NbN HEB mixers thus are rapidly approaching the type of performance required of a rugged practical receiver for astronomy and remote sensing in the THz region.
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Yagoubov P, Kroug M, Merkel H, Kollberg E, Schubert J, Hubers H-W, et al. Heterodyne measurements of a NbN superconducting hot electron mixer at terahertz frequencies. IEEE Trans Appl Supercond. 1999;9(2):3757–60.
Abstract: The performance of a NbN based phonon-cooled Hot Electron Bolometric (HEB) quasioptical mixer is investigated in the 0.65-3.12 THz frequency range. The device is made from a 3 nm thick NbN film on high resistivity Si and integrated with a planar spiral antenna on the same substrate. The in-plane dimensions of the bolometer strip are 0.2/spl times/2 /spl mu/m. The best results of the DSB noise temperature at 1.5 GHz IF frequency obtained with one device are: 1300 K at 650 GHz, 4700 K at 2.5 THz and 10000 K at 3.12 THz. The measurements were performed at 4.5 K ambient temperature. The amount of local oscillator (LO) power absorbed in the bolometer is about 100 nW. The mixer is linear to within 1 dB compression up to the signal level 10 dB below that of the LO. The intrinsic single sideband conversion gain measured at 650 GHz is -9 dB, the total conversion gain is -14 dB.
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Gol'tsman GN. Hot electron bolometric mixers: new terahertz technology. Infrared Physics & Technology. 1999;40(3):199–206.
Abstract: This paper presents an overview of recent results for NbN phonon-cooled hot electron bolometric (HEB) mixers. The noise temperature of the receivers based on both quasioptical and waveguide versions of HEB mixers has crossed the level of 1 K GHz−1 at 430 GHz (410 K), 600–650 GHz (480 K), 750 GHz (600 K), 810 GHz (780 K) and is close to that level at 1.1 THz (1250 K) and 2.5 THz (4500 K). The gain bandwidth measured for quasioptical HEB mixer at 620 GHz reached 4 GHz and the noise temperature bandwidth was almost 8 GHz. Local oscillator power requirements are about 1 μW for mixers made by photolithography and about 100 nW for mixers made by e-beam lithography. A waveguide version of 800 GHz receiver was installed at the Submillimeter Telescope Observatory on Mt. Graham, AZ, to conduct astronomical observations of known submillimeter lines (CO, J=7→6, CI, J=2→1). It was proved that the receiver works as a practical instrument.
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