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Seliverstov S, Maslennikov S, Ryabchun S, Finkel M, Klapwijk TM, Kaurova N, et al. Fast and sensitive terahertz direct detector based on superconducting antenna-coupled hot electron bolometer. IEEE Trans Appl Supercond. 2015;25(3):2300304.
Abstract: We characterize superconducting antenna-coupled hot-electron bolometers for direct detection of terahertz radiation operating at a temperature of 9.0 K. The estimated value of responsivity obtained from lumped-element theory is strongly different from the measured one. A numerical calculation of the detector responsivity is developed, using the Euler method, applied to the system of heat balance equations written in recurrent form. This distributed element model takes into account the effect of nonuniform heating of the detector along its length and provides results that are in better agreement with the experiment. At a signal frequency of 2.5 THz, the measured value of the optical detector noise equivalent power is 2.0 × 10-13 W · Hz-0.5. The value of the bolometer time constant is 35 ps. The corresponding energy resolution is about 3 aJ. This detector has a sensitivity similar to that of the state-of-the-art sub-millimeter detectors operating at accessible cryogenic temperatures, but with a response time several orders of magnitude shorter.
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Maslennikov S. RF heating efficiency of the terahertz superconducting hot-electron bolometer. arXiv [Internet]. 2014 [cited 2024 Jul 4];1404.5276:1–4;arXiv:1404.5276. Available from: http://arxiv.org/abs/1404.5276
Abstract: We report results of the numerical solution by the Euler method of the system of heat balance equations written in recurrent form for the superconducting hot-electron bolometer (HEB) embedded in an electrical circuit. By taking into account the dependence of the HEB resistance on the transport current we have been able to calculate rigorously the RF heating efficiency, absorbed local oscillator (LO) power and conversion gain of the HEB mixer. We show that the calculated conversion gai nis in excellent agreement with the experimental results, and that the substitution of the calculated RF heating efficiency and absorbed LO power into the expressions for the conversion gain and noise temperature given by the analytical small-signal model of the HEB yields excellent agreement with the corresponding measured values
Keywords: superconducting hot-electron bolometer mixer, HEB, NbN, distributed model, HEB model, HEB mixer model, heat balance equa-tions, conversion gain, RF heating efficiency, noise temperature, simulation, Euler method
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Gershenzon EM, Gol’tsman GN, Gousev YP, Elant’ev AI, Semenov AD. Electromagnetic radiation mixer based on electron heating in resistive state of superconductive Nb and YBaCuO films. IEEE Trans Magn. 1991;27(2):1317–20.
Abstract: A theory of an electron-heating mixer which makes it possible to calculate all the characteristics of the device is developed. It is shown that positive conversion gain is possible for such a mixer in the millimeter to near-infrared wavelength range. The dynamic range and the optimum heterodyne power can be selected from a very wide interval by varying the mixing element volume. Measurements made for Nb within the frequency range of 120-750 GHz confirm the theory. The conversion loss obtained at T=1.6 K and normalized to the element reaches 0.3 dB in the intermediate frequency band of 40 MHz; the possible noise temperature is 50 K. The estimation of noise temperature and output band for YBaCuO at T=77 yields 200 K and more than 10 GHz, respectively.
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Gol’tsman G, Okunev O, Chulkova G, Lipatov A, Dzardanov A, Smirnov K, et al. Fabrication and properties of an ultrafast NbN hot-electron single-photon detector. IEEE Trans Appl Supercond. 2001;11(1):574–7.
Abstract: A new type of ultra-high-speed single-photon counter for visible and near-infrared wavebands based on an ultrathin NbN hot-electron photodetector (HEP) has been developed. The detector consists of a very narrow superconducting stripe, biased close to its critical current. An incoming photon absorbed by the stripe produces a resistive hotspot and causes an increase in the film’s supercurrent density above the critical value, leading to temporary formation of a resistive barrier across the device and an easily measurable voltage pulse. Our NbN HEP is an ultrafast (estimated response time is 30 ps; registered time, due to apparatus limitations, is 150 ps), frequency unselective device with very large intrinsic gain and negligible dark counts. We have observed sequences of output pulses, interpreted as single-photon events for very weak laser beams with wavelengths ranging from 0.5 /spl mu/m to 2.1 /spl mu/m and the signal-to-noise ratio of about 30 dB.
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Hajenius M, Barends R, Gao JR, Klapwijk TM, Baselmans JJA, Baryshev A, et al. Local resistivity and the current-voltage characteristics of hot electron bolometer mixers. IEEE Trans Appl Supercond. 2005;15(2):495–8.
Abstract: Hot-electron bolometer devices, used successfully in low noise heterodyne mixing at frequencies up to 2.5 THz, have been analyzed. A distributed temperature numerical model of the NbN bridge, based on a local electron and a phonon temperature, is used to model pumped IV curves and understand the physical conditions during the mixing process. We argue that the mixing is predominantly due to the strongly temperature dependent local resistivity of the NbN. Experimentally we identify the origins of different transition temperatures in a real HEB device, suggesting the importance of the intrinsic resistive transition of the superconducting bridge in the modeling.
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Гольцман ГН, Птицина НГ, Ригер ЕР. Оже-рекомбинация свободных носителей на мелких донорах в германии. Физика и техника полупроводников. 1984;18(9):1684–6.
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Gershenzon EM, Gol'tsman GN, Multanovskii VV, Ptitsina NG. Kinetics of electron and hole binding into excitons in germanium. Sov Phys JETP. 1983;57(2):369–76.
Abstract: The kinetics of binding of free carriers'into excitons under stationary and nonstationary conditions is studied by investigating the submillimeter photoconductivity of Ge in a wide range of temperatures and of excitation levels. It is shown that the absolute values and the temperature dependence of the binding cross section (o- T-'.' ) can be satisfactorily described by the cascade recombination theory. The value of o and its temperature dependence differ significantly from the cross sections, measured in the same manner, for capture by attracting small impurities. Under nonstationary conditions, just as in the case of recombination with shallow impurities, a signifi- cant role is played by the sticking of the carriers in highly excited states.
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Gershenzon EM, Gershenzon ME, Gol'tsman GN, Semenov AD, Sergeev AV. Heating of electrons in a superconductor in the resistive state by electromagnetic radiation. Sov Phys JETP. 1984;59(2):442–50.
Abstract: The effect of heating of electrons relative to phonons is observed and investigated in a superconducting film that is made resistive by current and by an external magnetic field. The effect is manifested by an increase of the film resistance under the influence of the electromagnetic radiation, and is not selective in the frequency band 10^10-10^15 Hz. The independence of the effect of frequency under conditions of strong scattering by static defects is attributed to the decisive role of electron-electron collisions in the distribution function. The experimentally obtained characteristic time of resistance variation near the superconducting transition corresponds to the relaxation time of the order parameter, while at lower temperatures and fields it corresponds to the time of the inelastic electron-phonon interaction.
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Gershenzon EM, Gershenzon ME, Gol'tsman GN, Semyonov AD, Sergeev AV. Heating of electrons in superconductor in the resistive state due to electromagnetic radiation. Solid State Communications. 1984;50(3):207–12.
Abstract: The effect of heating electrons with respect to phonons in a thin superconducting film driven into the resistive state by the current and the external magnetic field has been observed and investigated. This effect caused by the electromagnetic radiation is manifested in the increased resistance of the film and is not selective over the frequency range from 1010 to 1015 Hz. That the effect is frequency independent under the conditions of strong electron scattering caused by static defects is explained by the decisive role of electron -electron collisions in forming the distribution function. The characteristic time of resistance change, obtained experimentally, corresponds to the relaxation time of the order parameter near the superconducting transition and to the relaxation time of the nonelastic electron-phonon interaction at lower temperatures and in lower magnetic fields.
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Gershenzon EM, Il'in VA, Litvak-Gorskaya LB, Filonovich SR. Character of submillimeter photoconductivity in n-lnSb. Sov Phys JETP. 1979;49(1):121–8.
Abstract: A comprehensive investigation was made of the submillimeter photoconductivity of n -1nSb in the range of wavelengths L = 0.6-8 mm, magnetic fields H = 0-30 kOe, electric fields E = 0.01-0.5 V/cm, and temperatures T = 1.3-30 K. The kinetics of the photoconductivity processes as a function of T, E; and H is investigated. It is shown that impurity photoconductivity does exist for any degree of compensation of extremely purified n-InSb. Particular attention is paid to the hopping photoconductivity realized in strongly compensated n-1nSb (K > 0.8).
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