|
Belosevich VV, Gayduchenko IA, Titova NA, Zhukova ES, Goltsman GN, Fedorov GE, et al. Response of carbon nanotube film transistor to the THz radiation. In: EPJ Web Conf. Vol 195.; 2018. 05012 (1 to 2).
|
|
|
Emelianov AV, Nekrasov NP, Moskotin MV, Fedorov GE, Otero N, Romero PM, et al. Individual SWCNT transistor with photosensitive planar junction induced by two‐photon oxidation. Adv Electron Mater. 2021;7(3):2000872.
Abstract: The fabrication of planar junctions in carbon nanomaterials is a promising way to increase the optical sensitivity of optoelectronic nanometer-scale devices in photonic connections, sensors, and photovoltaics. Utilizing a unique lithography approach based on direct femtosecond laser processing, a fast and easy technique for modification of single-walled carbon nanotube (SWCNT) optoelectronic properties through localized two-photon oxidation is developed. It results in a novel approach of quasimetallic to semiconducting nanotube conversion so that metal/semiconductor planar junction is formed via local laser patterning. The fabricated planar junction in the field-effect transistors based on individual SWCNT drastically increases the photoresponse of such devices. The broadband photoresponsivity of the two-photon oxidized structures reaches the value of 2 × 107 A W−1 per single SWCNT at 1 V bias voltage. The SWCNT-based transistors with induced metal/semiconductor planar junction can be applied to detect extremely small light intensities with high spatial resolution in photovoltaics, integrated circuits, and telecommunication applications.
|
|
|
Gayduchenko IA, Moskotin MV, Matyushkin YE, Rybin MG, Obraztsova ED, Ryzhii VI, et al. The detection of sub-terahertz radiation using graphene-layer and graphene-nanoribbon FETs with asymmetric contacts. In: Materials Today: Proc. Vol 5.; 2018. p. 27301–6.
Abstract: We report on the detection of sub-terahertz radiation using single layer graphene and graphene-nanoribbon FETs with asymmetric contacts (one is the Schottky contact and one – the Ohmic contact). We found that cutting graphene into ribbons a hundred nanometers wide leads to a decrease of the response to sub-THz radiation. We show that suppression of the response in the graphene nanoribbons devices can be explained by unusual properties of the Schottky barrier on graphene-vanadium interface.
|
|
|
Gayduchenko IA, Fedorov GE, Stepanova TS, Titova N, Voronov BM, But D, et al. Asymmetric devices based on carbon nanotubes as detectors of sub-THz radiation. In: J. Phys.: Conf. Ser. Vol 741.; 2016. 012143 (1 to 6).
Abstract: Demand for efficient terahertz (THz) radiation detectors resulted in intensive study of the asymmetric carbon nanostructures as a possible solution for that problem. In this work, we systematically investigate the response of asymmetric carbon nanodevices to sub-terahertz radiation using different sensing elements: from dense carbon nanotube (CNT) network to individual CNT. We conclude that the detectors based on individual CNTs both semiconducting and quasi-metallic demonstrate much stronger response in sub-THz region than detectors based on disordered CNT networks at room temperature. We also demonstrate the possibility of using asymmetric detectors based on CNT for imaging in the THz range at room temperature. Further optimization of the device configuration may result in appearance of novel terahertz radiation detectors.
|
|
|
Matyushkin YE, Gayduchenko IA, Moskotin MV, Goltsman GN, Fedorov GE, Rybin MG, et al. Graphene-layer and graphene-nanoribbon FETs as THz detectors. In: J. Phys.: Conf. Ser. Vol 1124.; 2018. 051054.
Abstract: We report on detection of sub-THz radiation (129-430 GHz) using graphene based asymmetric field-effect transistor (FET) structures with different channel geometry: monolayer graphene, graphene nanoribbons. In all devices types we observed the similar trends of response on sub-THz radiation. The response fell with increasing frequency at room temperature, but increased with increasing frequency at 77 K. Our calculations show that the change in the trend of the frequency dependence at 77 K is associated with the appearance of plasma waves in the graphene channel. Unusual properties of p-n junctions in graphene are highlighted using devices of special geometry.
|
|
|
Gayduchenko IA, Fedorov GE, Moskotin MV, Yagodkin DI, Seliverstov SV, Goltsman GN, et al. Manifestation of plasmonic response in the detection of sub-terahertz radiation by graphene-based devices. Nanotechnol. 2018;29(24):245204 (1 to 8).
Abstract: We report on the sub-terahertz (THz) (129-450 GHz) photoresponse of devices based on single layer graphene and graphene nanoribbons with asymmetric source and drain (vanadium and gold) contacts. Vanadium forms a barrier at the graphene interface, while gold forms an Ohmic contact. We find that at low temperatures (77 K) the detector responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. Graphene nanoribbon devices display a similar pattern, albeit with a lower responsivity.
|
|
|
Florya IN, Korneeva YP, Sidorova MV, Golikov AD, Gaiduchenko IA, Fedorov GE, et al. Energy relaxtation and hot spot formation in superconducting single photon detectors SSPDs. In: EPJ Web of Conferences. Vol 103.; 2015. 10004 (1 to 2).
Abstract: We have studied the mechanism of energy relaxation and resistive state formation after absorption of a single photon for different wavelengths and materials of single photon detectors. Our results are in good agreement with the hot spot model.
|
|
|
Fedorov GE, Gaiduchenko IA, Golikov AD, Rybin MG, Obraztsova ED, Voronov BM, et al. Response of graphene based gated nanodevices exposed to THz radiation. In: EPJ Web of Conferences. Vol 103.; 2015. 10003 (1 to 2).
Abstract: In this work we report on the response of asymmetric graphene based devices to subterahertz and terahertz radiation. Our devices are made in a configuration of a field-effect transistor with conduction channel between the source and drain electrodes formed with a CVD-grown graphene. The radiation is coupled through a spiral antenna to source and top gate electrodes. Room temperature responsivity of our devices is close to the values that are attractive for commercial applications. Further optimization of the device configuration may result in appearance of novel terahertz radiation detectors.
|
|
|
Gayduchenko IA, Fedorov GE, Ibragimov RA, Stepanova TS, Gazaliev AS, Vysochanskiy NA, et al. Synthesis of single-walled carbon nanotube networks using monodisperse metallic nanocatalysts encapsulated in reverse micelles. Chem Ind Belgrade. 2016;70(1):1–8.
Abstract: We report on a method of synthesis of single-walled carbon nanotubes percolated networks on silicon dioxide substrates using monodisperse Co and Ni catalyst. The catalytic nanoparticles were obtained by modified method of reverse micelles of bis-(2-ethylhexyl) sulfosuccinate sodium in isooctane solution that provides the nanoparticle size control in range of 1 to 5 nm. The metallic nanoparticles of Ni and Co were characterized using transmission electron microscopy (TEM) and atomic-force microscopy (AFM). Carbon nanotubes were synthesized by chemical vapor deposition of CH4/H2 composition at temperature 1000 °С on catalysts pre-deposited on silicon dioxide substrate. Before temperature treatment during the carbon nanotube synthesis most of the catalyst material agglomerates due to magnetic forces while during the nanotube growth disintegrates into the separate nanoparticles with narrow diameter distribution. The formed nanotube networks were characterized using AFM, scanning electron microscopy (SEM) and Raman spectroscopy. We find that the nanotubes are mainly single-walled carbon nanotubes with high structural perfection up to 200 μm long with diameters from 1.3 to 1.7 nm consistent with catalyst nanoparticles diameter distribution and independent of its material.
|
|
|
Fedorov GE, Stepanova TS, Gazaliev AS, Gaiduchenko IA, Kaurova NS, Voronov BM, et al. Asymmetric devices based on carbon nanotubes for terahertz-range radiation detection. Semicond. 2016;50(12):1600–3.
Abstract: Various asymmetric detecting devices based on carbon nanotubes (CNTs) are studied. The asymmetry is understood as inhomogeneous properties along the conducting channel. In the first type of devices, an inhomogeneous morphology of the CNT grid is used. In the second type of devices, metals with highly varying work functions are used as the contact material. The relation between the sensitivity and detector configuration is analyzed. Based on the data obtained, approaches to the development of an efficient detector of terahertz radiation, based on carbon nanotubes are proposed.
|
|