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Vachtomin YB, Antipov SV, Maslennikov SN, Smirnov KV, Polyakov SL, Zhang W, et al. Quasioptical hot electron bolometer mixers based on thin NBN films for terahertz region. In: Proc. 16th Int. Crimean Microwave and Telecommunication Technology. Vol 2.; 2006. p. 688–9.
Abstract: Presented in this paper are the performances of HEB mixers based on 2-3.5 nm thick NbN films integrated with log-periodic spiral antenna. Double side-band receiver noise temperature values are 1300 K and 3100 K at 2.5 THz and at 3.8 THz, respectively. Mixer gain bandwidth is 5.2 GHz. Local oscillator power is 1-3 muW for mixers with different active area
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Вахтомин ЮБ, Антипов СВ, Масленников СН, Смирнов КВ, Поляков СЛ, Чжан В, et al. Квазиоптические смесители терагерцового диапазона на основе эффекта разогрева электронов в тонких пленках NbN. In: Proc. 16th Int. Crimean Microwave and Telecommunication Technology. Vol 2.; 2006. p. 688–9.
Abstract: Представлены результаты измерения рактеристик смесителей на эффекте разогрева электронов в тонких сверхпроводниковых пленках NbN. Смесители были изготовлены на основе пленок NbN толщиной 2-3.5 нм осажденных на кремниевую подложку с буферным подсло- ем MgO. Смесительный элемент согласовывался с планар- ной логопериодической спиральной антенной. Лучшее зна- чение шумовой температуры приемника на основе NbN смесителя составило 1300 К и 3100 К на частотах гетеро- дина 2.5 TГц и 3.8 ТГц, соответственно. Максимальное зна- чение полосы преобразования, измеренной на частоте 900 |Ц, достигло значения 5.2 ГГц для смесителя изготовлен- ного из NbN пленки толщиной 2 нм. Оптимальная мощность Представлены результаты измерения ха- гетеродинного источника составила 1-3 мкВт для смесите- лей с различным объемом смесительного элемента.
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Svechnikov SI, Finkel MI, Maslennikov SN, Vachtomin YB, Smirnov KV, Seleznev VA, et al. Superconducting hot electron bolometer mixer for middle IR range. In: Proc. 16th Int. Crimean Microwave and Telecommunication Technology. Vol 2.; 2006. p. 686–7.
Abstract: The developed directly lens coupled hot electron bolometer (HEB) mixer was based on 5 nm superconducting NbN deposited on GaAs substrate. The layout of the structure, including 30x20 mcm^2 active area coupled with a 50 Ohm coplanar line, was patterned by photolithography. The responsivity of the mixer was measured in a direct detection mode in the 25-64 THz frequency range. The noise performance of the mixer and the directivity of the receiver were investigated in a heterodyne mode. A 10.6 mum wavelength CW CO2 laser was utilized as a local oscillator.
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Smirnov K, Korneev A, Minaeva O, Divochij A, Rubtsova I, Antipov A, et al. Superconducting single-photon detector for near- and middle IR wavelength range. In: Proc. 16th Int. Crimean Microwave and Telecommunication Technology. Vol 2.; 2006. p. 684–5.
Abstract: Presented in this paper are the results of research of NbN-film superconducting single-photon detector. At 2 K temperature, quantum efficiency in the visible light (0.56 mum) reaches 30-40 %. With the wavelength increase quantum efficiency decreases and comes to 20% at 1.55 mum and 0.02% at 5.6 mum. Minimum dark counts rate is 2times10-4s-1. The jitter of detector is 35 ps. The detector was successfully implemented for integrated circuits non-invasive optical testing. It is also perspective for quantum cryptography systems
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Rosfjord KM, Yang JKW, Dauler EA, Anant V, Berggren KK, Kerman AJ, et al. Increased detection efficiencies of nanowire single-photon detectors by integration of an optical cavity and anti-reflection coating. In: CLEO/QELS.; 2006. JTuF2 (1 to 2).
Abstract: We fabricate and test superconducting NbN-nanowire single-photon detectors with an integrated optical cavity and anti-reflection coating. We design the cavity and coating such as to maximize absorption in the NbN film of the detector.
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Chulkova G, Milostnaya I, Tarkhov M, Korneev A, Minaeva O, Voronov B, et al. Superconducting single-photon nanostructured detectors for advanced optical applications. In: Proc. Symposium on Photonics Technologies for 7th Framework Program. Vol 400.; 2006.
Abstract: We present superconducting single-photon detectors (SSPDs) based on NbN thin-film nanostructures and operated at liquid helium temperatures. The SSPDs are made of ultrathin NbN films (2.5-4 nm thick, Tc= 9-11K) as meander-shaped nanowires covering the area of 10× 10 µm2. Our detectors are operated at the temperature well below the critical temperature Tc and are DC biased by a current Ib close to the meander critical current Ic. The operation principle of the detector is based on the use of the resistive region in a narrow ultra-thin superconducting stripe upon the absorption of an incident photon. The developed devices demonstrate high sensitivity and response speed in a broadband range from UV to mid-IR (up to 6 µm), making them very attractive for advanced optical technologies, which require efficient detectors of single quanta and low-density optical radiation.
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Koshelets VP, Khudchenko AV. Analysis of spectral characteristics of a superconducting integrated receiver. J. Communications Technol. Electron.. 2006;51(5):596–603.
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Gordon NT, Lees DJ, Bowen G, Phillips TS, Haigh M, Jones CL, et al. HgCdTe detectors operating above 200 K. J. Electron. Mater.. 2006;35(6):1140–4.
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Dauler EA, Kerman AJ, Robinson BS, Yang JKW, Voronov BM, Gol’tsman GN, et al. Achieving high counting rates in superconducting nanowire single-photon detectors. In: CLEO/QELS. Optical Society of America; 2006. JTuD3 (1 to 2).
Abstract: Kinetic inductance is determined to be the primary limitation to the counting rate of superconducting nanowire single-photon counters. Approaches for overcoming this limitation will be discussed.
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Rosfjord KM, Yang JKW, Dauler EA, Kerman AJ, Vikas Anant, Voronov BM, et al. Nanowire Single-photon detector with an integrated optical cavity and anti-reflection coating. Opt Express. 2006;14(2):527–34.
Abstract: We have fabricated and tested superconducting single-photon detectors and demonstrated detection efficiencies of 57% at 1550-nm wavelength and 67% at 1064 nm. In addition to the peak detection efficiency, a median detection efficiency of 47.7% was measured over 132 devices at 1550 nm. These measurements were made at 1.8K, with each device biased to 97.5% of its critical current. The high detection efficiencies resulted from the addition of an optical cavity and anti-reflection coating to a nanowire photodetector, creating an integrated nanoelectrophotonic device with enhanced performance relative to the original device. Here, the testing apparatus and the fabrication process are presented. The detection efficiency of devices before and after the addition of optical elements is also reported.
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