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Author |
Korneev, A. A. |
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Title |
Superconducting NbN microstrip single-photon detectors |
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Year |
2021 |
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Proc. Quantum Optics and Photon Counting |
Abbreviated Journal |
Proc. Quantum Optics and Photon Counting |
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11771 |
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NbN SSPD, SNSPD |
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Superconducting Single-Photon Detectors (SSPD) invented two decades ago have evolved to a mature technology and have become devices of choice in the advanced applications of quantum optics, such as quantum cryptography and optical quantum computing. In these applications SSPDs are coupled to single-mode fibers and feature almost unity detection efficiency, negligible dark counts, picosecond timing jitter and MHz photon count rate. Meanwhile, there are great many applications requiring coupling to multi-mode fibers or free space. ‘Classical’ SSPDs with 100-nm-wide superconducting strip and covering area of about 100 µm2 are not suitable for further scaling due to degradation of performance and low fabrication yield. Recently we have demonstrated single-photon counting in micron-wide superconducting bridges and strips. Here we present our approach to the realization of practical photon-counting detectors of large enough area to be efficiently coupled to multi-mode fibers or free space. The detector is either a meander or a spiral of 1-µm-wide strip covering an area of 50x50 µm2. Being operated at 1.7K temperature it demonstrates the saturated detection efficiency (i.e. limited by the absorption in the detector) up to 1550 nm wavelength, about 10 ns dead time and timing jitter in range 50-100 ps. |
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SPIE |
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Prochazka, I.; Štefaňák, M.; Sobolewski, R.; Gábris, A. |
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Quantum Optics and Photon Counting; SPIE Optics + Optoelectronics, 2021, Online Only |
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1784 |
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Author |
Gol’tsman, G. N.; Gershenzon, E. M. |
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Title |
High speed hot-electron superconducting bolometer |
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Conference Article |
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Year |
1993 |
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Proc. SPIE |
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Proc. SPIE |
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Volume |
2104 |
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181-182 |
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Keywords |
NbN HEb, Nb, Al |
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Physical limitation of response time of a superconducting bolometer as well as the nature of non-equilibrium detection of radiation have been investigated for Al, Nb and NbN thin films in spectral range from submillimeter to near-infraredwavelengths [1,2]. In the case of ideal heat removal from the film with the f_‘. 100A thickness the detection mechanism is an electron heating effect that is not selective to radiation wavelength in a very broad range. The response time ofan electron heating bolometer is determined by an electron-phonon interaction time. This time is of about 10 ns, 0.5 ns and 20 ps for Al, Nb, and NbN correspondingly near the critical temperature of the superconducting film. Thesensitive area of the bolometer consists of a number of narrow strips (with awidth of 1µm) connected in parallel to contact pads; these pads together witha sapphire substrate and a ground plate represent the microstrip transmissionline with an impedance of 50 Q. |
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SPIE |
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Birch, J.R.; Parker, T.J. |
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18th International Conference on Infrared and Millimeter Waves |
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1652 |
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Zhang, J.; Verevkin, A.; Slysz, W.; Chulkova, G.; Korneev, A.; Lipatov, A.; Okunev, O.; Gol’tsman, G. N.; Sobolewski, Roman |
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Title |
Time-resolved characterization of NbN superconducting single-photon optical detectors |
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Conference Article |
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2017 |
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Proc. SPIE |
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Proc. SPIE |
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Volume |
10313 |
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103130F (1 to 3) |
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Keywords |
NbN SSPD, SNSPD |
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NbN superconducting single-photon detectors (SSPDs) are very promising devices for their picosecond response time, high intrinsic quantum efficiency, and high signal-to-noise ratio within the radiation wavelength from ultraviolet to near infrared (0.4 gm to 3 gm) [1-3]. The single photon counting property of NbN SSPDs have been investigated thoroughly and a model of hotspot formation has been introduced to explain the physics of the photon- counting mechanism [4-6]. At high incident flux density (many-photon pulses), there are, of course, a large number of hotspots simultaneously formed in the superconducting stripe. If these hotspots overlap with each other across the width w of the stripe, a resistive barrier is formed instantly and a voltage signal can be generated. We assume here that the stripe thickness d is less than the electron diffusion length, so the hotspot region can be considered uniform. On the other hand, when the photon flux is so low that on average only one hotspot is formed across w at a given time, the formation of the resistive barrier will be realized only when the supercurrent at sidewalks surpasses the critical current (jr) of the superconducting stripe [1]. In the latter situation, the formation of the resistive barrier is associated with the phase-slip center (PSC) development. The effect of PSCs on the suppression of superconductivity in nanowires has been discussed very recently [8, 9] and is the subject of great interest. |
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SPIE |
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Armitage, J. C. |
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Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging, 2002, Ottawa, Ontario, Canada |
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Downloaded from http://www2.ece.rochester.edu/projects/ufqp/PDF/2002/213NbNTimeOPTO_b.pdf This artcle was published in 2017 with only first author indicated (Zhang, J.). There were 8 more authors! |
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1750 |
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Schroeder, E.; Mauskopf, P.; Pilyavsky, G.; Sinclair, A.; Smith, N.; Bryan, S.; Mani, H.; Morozov, D.; Berggren, K.; Zhu, D.; Smirnov, K.; Vakhtomin, Y. |
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On the measurement of intensity correlations from laboratory and astronomical sources with SPADs and SNSPDs |
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Conference Article |
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2016 |
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Proc. SPIE |
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Proc. SPIE |
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Volume |
9907 |
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99070P (1 to 13) |
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SPAD, NbN SSPD applications, SNSPD |
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We describe the performance of detector modules containing silicon single photon avalanche photodiodes (SPADs) and superconducting nanowire single photon detectors (SNSPDs) to be used for intensity interferometry. The SPADs are mounted in fiber-coupled and free-space coupled packages. The SNSPDs are mounted in a small liquid helium cryostat coupled to single mode fiber optic cables which pass through a hermetic feed-through. The detectors are read out with microwave amplifiers and FPGA-based coincidence electronics. We present progress on measurements of intensity correlations from incoherent sources including gas-discharge lamps and stars with these detectors. From the measured laboratory performance of the correlation system, we estimate the sensitivity to intensity correlations from stars using commercial telescopes and larger existing research telescopes. |
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SPIE |
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Malbet, F.; Creech-Eakman, M.J.; Tuthill, P.G. |
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Optical and Infrared Interferometry and Imaging V |
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1809 |
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Krause, S.; Mityashkin, V.; Antipov, S.; Gol’tsman, G.; Meledin, D.; Desmaris, V.; Belitsky, V.; Rudziński, M. |
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Title |
Reduction of phonon escape time for nbn hot electron bolometers by using gan buffer layers |
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Journal Article |
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Year |
2017 |
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IEEE Trans. Terahertz Sci. Technol. |
Abbreviated Journal |
IEEE Trans. Terahertz Sci. Technol. |
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7 |
Issue |
1 |
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53-59 |
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NbN HEB mixer |
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In this paper, we investigated the influence of the GaN buffer layer on the phonon escape time of phonon-cooled hot electron bolometers (HEBs) based on NbN material and compared our findings to conventionally employed Si substrate. The presented experimental setup and operation of the HEB close to the critical temperature of the NbN film allowed for the extraction of phonon escape time in a simplified manner. Two independent experiments were performed at GARD/Chalmers and MSPU on a similar experimental setup at frequencies of approximately 180 and 140 GHz, respectively, and have shown reproducible and consistent results. By fitting the normalized IF measurement data to the heat balance equations, the escape time as a fitting parameter has been deduced and amounts to 45 ps for the HEB based on Si substrate as in contrast to a significantly reduced escape time of 18 ps for the HEB utilizing the GaN buffer layer under the assumption that no additional electron diffusion has taken place. This study indicates a high phonon transmissivity of the NbN-to-GaN interface and a prospective increase of IF bandwidth for HEB made of NbN on GaN buffer layers, which is desirable for future THz HEB heterodyne receivers. |
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2156-3446 |
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1330 |
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Author |
Yagoubov, P.; Kroug, M.; Merkel, H.; Kollberg, E.; Schubert, J.; Hubers, H.-W.; Schwaab, G.; Gol’tsman, G.; Gershenzon, E. |
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Performance of NbN phonon-cooled hot-electron bolometric mixer at Terahertz frequencies |
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Conference Article |
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Year |
1998 |
Publication |
Proc. 6-th Int. Conf. Terahertz Electron. |
Abbreviated Journal |
Proc. 6-th Int. Conf. Terahertz Electron. |
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149-152 |
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NbN HEB mixers |
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The performance of a NbN based phonon-cooled Hot Electron Bolometric (HEB) quasioptical mixer is investigated in the 0.65-3.12 THz frequency range. The device is made from a 3 nm thick NbN film on high resistivity Si and integrated with a planar spiral antenna on the same substrate. The in-plane dimensions of the bolometer strip are 0.2/spl times/2 /spl mu/m. The results of the DSB noire temperature are: 1300 K at 650 GHz, 4700 K at 2.5 TBz and 10000 K at 3.12 THz. The RF bandwidth of the receiver is at least 2.5 THz. The amount of LO power absorbed in the bolometer is about 100 nW. The mixer is linear to within 1 dB compression up to the signal level 10 dB below that of the LO. The intrinsic single sideband conversion gain is measured to be -9 dB, the total conversion gain -14 dB. |
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IEEE Sixth International Conference on Terahertz Electronics Proceedings. THZ 98. (Cat. No.98EX171) |
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1582 |
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Blundell, R.; Kawamura, J. H.; Tong, C. E.; Papa, D. C.; Hunter, T. R.; Gol’tsman, G. N.; Cherednichenko, S. I.; Voronov, B. M.; Gershenzon, E. M. |
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A hot-electron bolometer mixer receiver for the 680-830 GHz frequency range |
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Conference Article |
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1998 |
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Proc. 6-th Int. Conf. Terahertz Electron. |
Abbreviated Journal |
Proc. 6-th Int. Conf. Terahertz Electron. |
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18-20 |
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NbN HEB mixers |
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We describe a heterodyne receiver designed to operate in the partially transparent atmospheric windows centered on 680 and 830 GHz. The receiver incorporates a niobium nitride thin film, cooled to 4.2 K, as the phonon-cooled hot-electron mixer element. The double sideband receiver noise, measured over the frequency range 680-830 GHz, is typically 700-1300 K. The instantaneous output bandwidth of the receiver is 600 MHz. This receiver has recently been used at the SubMillimeter Telescope, jointly operated by the Steward Observatory and the Max Planck Institute for Radioastronomy, for observations of the neutral carbon and CO spectral lines at 810 GHz and at 806 and 691 GHz respectively. Laboratory measurements on a second mixer in the same test receiver have yielded extended high frequency performance to 1 THz. |
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Leeds, UK |
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IEEE |
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0-7803-4903-2 |
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IEEE Sixth International Conference on Terahertz Electronics Proceedings. THZ 98. (Cat. No.98EX171) |
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1581 |
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Trifonov, A.; Tong, C.-Y. E.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. |
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Title |
Photon absorption near the gap frequency in a hot electron bolometer |
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Journal Article |
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2017 |
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IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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27 |
Issue |
4 |
Pages |
1-4 |
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NBN HEB mixer |
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The superconducting energy gap is a fundamental characteristic of a superconducting film, which, together with the applied pump power and the biasing setup, defines the instantaneous resistive state of the Hot Electron Bolometer (HEB) mixer at any given bias point on the I-V curve. In this paper we report on a series of experiments, in which we subjected the HEB to radiation over a wide frequency range along with parallel microwave injection. We have observed three distinct regimes of operation of the HEB, depending on whether the radiation is above the gap frequency, far below it or close to it. These regimes are driven by the different patterns of photon absorption. The experiments have allowed us to derive the approximate gap frequency of the device under test as about 585 GHz. Microwave injection was used to probe the HEB impedance. Spontaneous switching between the superconducting (low resistive) state and a quasi-normal (high resistive) state was observed. The switching pattern depends on the particular regime of HEB operation and can assume a random pattern at pump frequencies below the gap to a regular relaxation oscillation running at a few MHz when pumped above the gap. |
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1558-2515 |
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1331 |
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Tong, C.-Y. E.; Trifonov, A.; Shurakov, A.; Blundell, R.; Gol’tsman, G. |
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A microwave-operated hot-electron-bolometric power detector for terahertz radiation |
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Journal Article |
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2015 |
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IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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25 |
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3 |
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2300604 (1 to 4) |
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NbN HEB mixer |
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A new class of microwave-operated THz power detectors based on the NbN hot-electron-bolometer (HEB) mixer is proposed. The injected microwave signal ( 1 GHz) serves the dual purpose of pumping the HEB element and enabling the read-out of the internal state of the device. A cryogenic amplifier amplifies the reflected microwave signal from the device and a homodyne scheme recovers the effects of the incident THz radiation. Two modes of operation have been identified, depending on the level of incident radiation. For weak signals, we use a chopper to chop the incident radiation against a black body reference and a lock-in amplifier to perform synchronous detection of the homodyne readout. The voltage measured is proportional to the incident power, and we estimate an optical noise equivalent power of 5pW/ √Hz at 0.83 THz. At higher signal levels, the homodyne circuit recovers the stream of steady relaxation oscillation pulses from the HEB device. The frequency of these pulses is in the MHz frequency range and bears a linear relationship with the incident THz radiation over an input power range of 15 dB. A digital frequency counter is used to measure THz power. The applicable power range is between 1 nW and 1 μW. |
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1558-2515 |
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1354 |
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Yang, J. K. W.; Dauler, E.; Ferri, A.; Pearlman, A.; Verevkin, A.; Gol’tsman, G.; Voronov, B.; Sobolewski, R.; Keicher, W. E.; Berggren, K. K. |
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Fabrication development for nanowire GHz-counting-rate single-photon detectors |
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Journal Article |
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2005 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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15 |
Issue |
2 |
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626-630 |
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NbN SSPD, SNSPD |
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We have developed a fabrication process for GHz-counting-rate, single-photon, high-detection-efficiency, NbN, nanowire detectors. We have demonstrated two processes for the device patterning, one based on the standard polymethylmethacrylate (PMMA) organic positive-tone electron-beam resist, and the other based on the newer hydrogen silsesquioxane (HSQ) negative-tone spin-on-glass resist. The HSQ-based process is simple and robust, providing high resolution and the prospect of high fill-factors. Initial testing results show superconductivity in the films, and suggest that the devices exhibit photosensitivity. |
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