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Vodolazov DY, Korneeva YP, Semenov AV, Korneev AA, Goltsman GN. Vortex-assisted mechanism of photon counting in a superconducting nanowire single-photon detector revealed by external magnetic field. Phys Rev B. 2015;92(10):104503 (1 to 9).
Abstract: We use an external magnetic field to probe the detection mechanism of a superconducting nanowire single-photon detector. We argue that the hot belt model (which assumes partial suppression of the superconducting order parameter Δ across the whole width of the superconducting nanowire after absorption of the photon) does not explain observed weak-field dependence of the photon count rate (PCR) for photons with λ=450nm and noticeable decrease of PCR (with increasing the magnetic field) in a range of the currents for photons with wavelengths λ=450–1200nm. Found experimental results for all studied wavelengths can be explained by the vortex hot spot model (which assumes partial suppression of Δ in the area with size smaller than the width of the nanowire) if one takes into account nucleation and entrance of the vortices to the photon induced hot spot and their pinning by the hot spot with relatively large size and strongly suppressed Δ.
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Sidorova MV, Kozorezov AG, Semenov AV, Korneeva YP, Mikhailov MY, Devizenko AY, et al. Nonbolometric bottleneck in electron-phonon relaxation in ultrathin WSi films. Phys Rev B. 2018;97(18):184512 (1 to 13).
Abstract: We developed the model of the internal phonon bottleneck to describe the energy exchange between the acoustically soft ultrathin metal film and acoustically rigid substrate. Discriminating phonons in the film into two groups, escaping and nonescaping, we show that electrons and nonescaping phonons may form a unified subsystem, which is cooled down only due to interactions with escaping phonons, either due to direct phonon conversion or indirect sequential interaction with an electronic system. Using an amplitude-modulated absorption of the sub-THz radiation technique, we studied electron-phonon relaxation in ultrathin disordered films of tungsten silicide. We found an experimental proof of the internal phonon bottleneck. The experiment and simulation based on the proposed model agree well, resulting in τe−ph∼140–190 ps at TC=3.4K, supporting the results of earlier measurements by independent techniques.
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Semenov AD, Hübers H-W, Gol’tsman GN, Smirnov K. Superconducting quantum detector for astronomy and X-ray spectroscopy. In: Pekola J, Ruggiero B, Silvestrini P, editors. Proc. Int. Workshop on Supercond. Nano-Electronics Devices. : Springer; 2002. p. 201–10.
Abstract: We propose the novel concept of ultra-sensitive energy-dispersive superconducting quantum detectors prospective for applications in astronomy and X-ray spectroscopy. Depending on the superconducting material and operation conditions, such detector may allow realizing background limited noise equivalent power 10−21 W Hz−1/2 in the terahertz range when exposed to 4-K background radiation or counting of 6-keV photon with almost 10—4 energy resolution. Planar layout and relatively simple technology favor integration of elementary detectors into a detector array.
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Fiore A, Marsili F, Bitauld D, Gaggero A, Leoni R, Mattioli F, et al. Counting photons using a nanonetwork of superconducting wires. In: Cheng M, editor. Nano-Net. Berlin, Heidelberg: Springer Berlin Heidelberg; 2009. p. 120–2.
Abstract: We show how the parallel connection of photo-sensitive superconducting nanowires can be used to count the number of photons in an optical pulse, down to the single-photon level. Using this principle we demonstrate photon-number resolving detectors with unprecedented sensitivity and speed at telecommunication wavelengths.
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Korneev A, Lipatov A, Okunev O, Chulkova G, Smirnov K, Gol’tsman G, et al. GHz counting rate NbN single-photon detector for IR diagnostics of VLSI CMOS circuits. Microelectronic Engineering. 2003;69(2-4):274–8.
Abstract: We present a new, simple to manufacture superconducting single-photon detector operational in the range from ultraviolet to mid-infrared radiation wavelengths. The detector combines GHz counting rate, high quantum efficiency and very low level of dark (false) counts. At 1.3–1.5 μm wavelength range our detector exhibits a quantum efficiency of 5–10%. The detector photoresponse voltage pulse duration was measured to be about 150 ps with jitter of 35 ps and both of them were limited mostly by our measurement equipment. In terms of quantum efficiency, dark counts level, speed of operation the detector surpasses all semiconductor counterparts and was successfully applied for CMOS integrated circuits diagnostics.
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Goltsman G, Korneev A, Izbenko V, Smirnov K, Kouminov P, Voronov B, et al. Nano-structured superconducting single-photon detectors. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 2004;520(1-3):527–9.
Abstract: NbN detectors, formed into meander-type, 10×10-μm2 area structures, based on ultrathin (down to 3.5-nm thickness) and nanometer-width (down to below 100 nm) NbN films are capable of efficiently detecting and counting single photons from the ultraviolet to near-infrared optical wavelength range. Our best devices exhibit QE >15% in the visible range and ∼10% in the 1.3–1.5-μm infrared telecommunication window. The noise equivalent power (NEP) ranges from ∼10−17 W/Hz1/2 at 1.5 μm radiation to ∼10−19 W/Hz1/2 at 0.56 μm, and the dark counts are over two orders of magnitude lower than in any semiconducting competitors. The intrinsic response time is estimated to be <30 ps. Such ultrafast detector response enables a very high, GHz-rate real-time counting of single photons. Already established applications of NbN photon counters are non-invasive testing and debugging of VLSI Si CMOS circuits and quantum communications.
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Lindgren M, Currie M, Zeng W-S, Sobolewski R, Cherednichenko S, Voronov B, et al. Picosecond response of a superconducting hot-electron NbN photodetector. Appl Supercond. 1998;6(7-9):423–8.
Abstract: The ps optical response of ultrathin NbN photodetectors has been studied by electro-optic sampling. The detectors were fabricated by patterning ultrathin (3.5 nm thick) NbN films deposited on sapphire by reactive magnetron sputtering into either a 5×10 μm2 microbridge or 25 1 μm wide, 5 μm long strips connected in parallel. Both structures were placed at the center of a 4 mm long coplanar waveguide covered with Ti/Au. The photoresponse was studied at temperatures ranging from 2.15 K to 10 K, with the samples biased in the resistive (switched) state and illuminated with 100 fs wide laser pulses at 395 nm wavelength. At T=2.15 K, we obtained an approximately 100 ps wide transient, which corresponds to a NbN detector response time of 45 ps. The photoresponse can be attributed to the nonequilibrium electron heating effect, where the incident radiation increases the temperature of the electron subsystem, while the phonons act as the heat sink. The high-speed response of NbN devices makes them an excellent choice for an optoelectronic interface for superconducting digital circuits, as well as mixers for the terahertz regime. The multiple-strip detector showed a linear dependence on input optical power and a responsivity =3.9 V/W.
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Korneev A, Korneeva Y, Florya I, Voronov B, Goltsman G. NbN nanowire superconducting single-photon detector for mid-infrared. Phys Procedia. 2012;36:72–6.
Abstract: Superconducting single-photon detectors (SSPD) is typically 100 nm-wide supercondiucting strip in a shape of meander made of 4-nm-thick film. To reduce response time and increase voltage response a parallel connection of the strips was proposed. Recently we demonstrated that reduction of the strip width improves the quantum effciency of such a detector at wavelengths longer than 1.5 μm. Being encourage by this progress in quantum effciency we improved the fabrication process and made parallel-wire SSPD with 40-nm-wide strips covering total area of 10 μm x 10 μm. In this paper we present the results of the characterization of such a parallel-wire SSPD at 10.6 μm wavelength and demonstrate linear dependence of the count rate on the light power as it should be in case of single-photon response.
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Корнеева ЮП, Михайлов ММ, Манова НН, Дивочий АА, Корнеев АА, Вахтомин ЮБ, et al. Сверхпроводниковый однофотонный детектор на основе аморфных пленок MoSi. In: Труды XVIII международного симпозиума «Нанофизика и наноэлектроника». Vol 1.; 2014. p. 53–4.
Abstract: Нами были изготовлены и исследованы однофотонные детекторы на основе сверхпроводящих пленок Mo x Si 1-x двух различных стехиометрий: Mo 3 Si и Mo 4 Si. При температуре 1.7 К лучшие детекторы площадью 7 мкм*7 мкм на основе этих пленок продемонстрировали системную квантовую эффективность 18% при скорости темнового счета 10 с -1 на длине волны 1.2 мкм с использованием неполяризованного источника, длительность импульса – 6 нс, джиттер – 120 пс.
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Sobolewski R, Xu Y, Zheng X, Williams C, Zhang J, Verevkin A, et al. Spectral sensitivity of the NbN single-photon superconducting detector. IEICE Trans Electron. 2002;E85-C(3):797–802.
Abstract: We report our studies on the spectral sensitivity of superconducting NbN thin-film single-photon detectors (SPD's) capable of GHz counting rates of visible and near-infrared photons. In particular, it has been shown that a NbN SPD is sensitive to 1.55-µm wavelength radiation and can be used for quantum communication. Our SPD's exhibit experimentally measured intrinsic quantum efficiencies from 20% at 800 nm up to 1% at 1.55-µm wavelength. The devices demonstrate picosecond response time (<100 ps, limited by our readout system) and negligibly low dark counts. Spectral dependencies of photon counting of continuous-wave, 0.4-µm to 3.5-µm radiation, and 0.63-µm, 1.33-µm, and 1.55-µm laser-pulsed radiations are presented for the single-stripe-type and meander-type devices.
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