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Gershenzon EM, Gershenzon ME, Gol'tsman GN, Semenov AD, Sergeev AV. Nonselective effect of electromagnetic radiation on a superconducting film in the resistive state. JETP Lett. 1982;36(7):296–9.
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Gershenzon EM, Gol'tsman GN, Ptitsyna NG. Carrier lifetime in excited states of shallow impurities in germanium. JETP Lett. 1977;25(12):539–43.
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Gershenzon EM, Gol'tsman GN, Multanovskii VV, Ptitsina NG. Cross section for binding of free carriers into excitons in germanium. JETP Lett. 1981;33(11):574.
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Gershenzon E, Gershenzon ME, Gol'tsman GN, Semenov AD, Sergeev AV. Heating of quasiparticles in a superconducting film in the resistive state. JETP Lett. 1981;34(5):268–71.
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Gershenzon EM, Gol'tsman GN. Transitions of electrons between excited states of donors in germanium. JETP Lett. 1971;14(2):63–5.
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Gershenzon EM, Gol'tsman GN, Mel'nikov AP. Binding energy of a carrier with a neutral impurity atom in germanium and in silicon. JETP Lett. 1971;14(5):185–6.
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Gershenzon EM, Gol'tsman GN, Emtsev VV, Mashovets TV, Ptitsyna NG, Ryvkin SM. Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium. JETP Lett. 1971;14(6):241.
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Gershenzon EM, Gol'tsman GN, Ptitsina NG. Observation of the free-exciton spectrum at submillimeter wavelengths. JETP Lett. 1972;16(4):161–2.
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Gershenzon EM, Gol'tsman G, Ptitsina NG. Energy spectrum of free excitons in germanium. JETP Lett. 1973;18(3):93.
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Korneev A, Kouminov P, Matvienko V, Chulkova G, Smirnov K, Voronov B, et al. Sensitivity and gigahertz counting performance of NbN superconducting single-photon detectors. Appl Phys Lett. 2004;84(26):5338–40.
Abstract: We have measured the quantum efficiencysQEd, GHz counting rate, jitter, and noise-equivalentpowersNEPdof nanostructured NbN superconducting single-photon detectorssSSPDsdin thevisible to infrared radiation range. Our 3.5-nm-thick and 100- to 200-nm-wide meander-typedevices(total area 10310mm2), operating at 4.2 K, exhibit an experimental QE of up to 20% inthe visible range and,10% at 1.3 to 1.55mm wavelength and are potentially sensitive up tomidinfrareds,10mmdradiation. The SSPD counting rate was measured to be above 2 GHz withjitter,18 ps, independent of the wavelength. The devices’ NEP varies from,10−17W/Hz1/2for1.55mm photons to,10−20W/Hz1/2for visible radiation. Lowering the SSPD operatingtemperature to 2.3 K significantly enhanced its performance, by increasing the QE to,20% andlowering the NEP level to,3310−22W/Hz1/2, both measured at 1.26mm wavelength.
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