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Cao Q, Yoon SF, Tong CZ, Ngo CY, Liu CY, Wang R, et al. Two-state competition in 1.3 μm multilayer InAs/InGaAs quantum dot lasers. Appl Phys Lett. 2009;95(19):3.
Abstract: The competition of ground state (GS) and excited state (ES) is investigated from the as-grown and thermally annealed 1.3 μm ten-layer p-doped InAs/GaAs quantum dot (QD) lasers. The modal gain competition between GS and ES are measured and analyzed around the ES threshold characteristics. Our results show that two-state competition is more significant in devices with short cavity length operating at high temperature. By comparing the as-grown and annealed devices, we demonstrate enhanced GS and suppressed ES lasing from the QD laser annealed at 600 °C for 15 s.
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Yates SJC, Baryshev AM, Baselmans JJA, Klein B, Güsten R. Fast Fourier transform spectrometer readout for large arrays of microwave kinetic inductance detectors. Appl Phys Lett. 2009;95(4):3.
Abstract: Microwave kinetic inductance detectors have great potential for large, very sensitive detector arrays for use in, for example, submillimeter imaging. Being intrinsically readout in the frequency domain, they are particularly suited for frequency domain multiplexing allowing ~1000 s of devices to be readout with one pair of coaxial cables. However, this moves the complexity of the detector from the cryogenics to the warm electronics. We present here the concept and experimental demonstration of the use of fast Fourier transform spectrometer readout, showing no deterioration of the noise performance compared to the low noise analog mixing while allowing high multiplexing ratios.
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Santavicca DF, Reulet B, Karasik BS, Pereverzev SV, Olaya D, Gershenson ME, et al. Energy resolution of terahertz single-photon-sensitive bolometric detectors. Appl Phys Lett. 2010;96(8):083505-3.
Abstract: We report measurements of the energy resolution of ultrasensitive superconducting bolometric detectors. The device is a superconducting titanium nanobridge with niobium contacts. A fast microwave pulse is used to simulate a single higher-frequency photon, where the absorbed energy of the pulse is equal to the photon energy. This technique allows precise calibration of the input coupling and avoids problems with unwanted background photons. Present devices have an intrinsic full-width at half-maximum energy resolution of approximately 23 THz, near the predicted value due to intrinsic thermal fluctuation noise.
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Zhang W, Khosropanah P, Gao JR, Kollberg EL, Yngvesson KS, Bansal T, et al. Quantum noise in a terahertz hot electron bolometer mixer. Appl Phys Lett. 2010;96(11):111113–(1.
Abstract: We have measured the noise temperature of a single, sensitive superconducting NbN hot electron bolometer (HEB) mixer in a frequency range from 1.6 to 5.3 THz, using a setup with all the key components in vacuum. By analyzing the measured receiver noise temperature using a quantum noise (QN) model for HEB mixers, we confirm the effect of QN. The QN is found to be responsible for about half of the receiver noise at the highest frequency in our measurements. The beta-factor (the quantum efficiency of the HEB) obtained experimentally agrees reasonably well with the calculated value.
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Tanner MG, Natarajan CM, Pottapenjara VK, O'Connor JA, Warburton RJ, Hadfield RH, et al. Enhanced telecom wavelength single-photon detection with NbTiN superconducting nanowires on oxidized silicon. Appl Phys Lett. 2010;96(22):3.
Abstract: Superconducting nanowire single-photon detectors (SNSPDs) have emerged as a highly promising infrared single-photon detector technology. Next-generation devices are being developed with enhanced detection efficiency (DE) at key technological wavelengths via the use of optical cavities. Furthermore, new materials and substrates are being explored for improved fabrication versatility, higher DE, and lower dark counts. We report on the practical performance of packaged NbTiN SNSPDs fabricated on oxidized silicon substrates in the wavelength range from 830 to 1700 nm. We exploit constructive interference from the SiO2/Si interface in order to achieve enhanced front-side fiber-coupled DE of 23.2 % at 1310 nm, at 1 kHz dark count rate, with 60 ps full width half maximum timing jitter.
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Zinoni C, Alloing B, Li LH, Marsili F, Fiore A, Lunghi L, et al. Erratum: “Single photon experiments at telecom wavelengths using nanowire superconducting detectors” [Appl. Phys. Lett. 91, 031106 (2007)]. Appl Phys Lett. 2010;96(8):089901.
Abstract: A calculation error was made in the original publication of this letter. The error was in the calculation of the noise equivalent power (NEP) values for the avalanche photodiode detector (APD) and the superconducting single photon detector (SSPD), the incorrect values were plotted on the right axis in Fig. 1(b). The correct NEP values were calculated with the same equation reported in the original letter and the revised Fig. 1(b) is shown below. The other conclusions of the paper remain unaltered.
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Terai H, Miki S, Yamashita T, Makise K, Wang Z. Demonstration of single-flux-quantum readout operation for superconducting single-photon detectors. Appl Phys Lett. 2010;97(11):3.
Abstract: A readout circuit using superconducting single-flux-quantum (SFQ) circuits has been developed to realize an independently addressable array of superconducting single-photon detectors (SSPDs). We tested the SFQ readout circuits by connecting with SSPDs. The error rates of readout circuits were below 10–5 for input signal amplitude of greater than 18.2 μA. Detection efficiencies (DEs) for single-photon incidents were measured both with and without the connection of a readout circuit. The observed DEs traced almost the same curves regardless of the connection of the readout circuit, except that the SSPD is likely to latch by connecting the readout circuit.
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Gaggero A, Nejad SJ, Marsili F, Mattioli F, Leoni R, Bitauld D, et al. Nanowire superconducting single-photon detectors on GaAs for integrated quantum photonic applications. Appl Phys Lett. 2010;97(15):3.
Abstract: We demonstrate efficient nanowire superconducting single photon detectors (SSPDs) based on NbN thin films grown on GaAs. NbN films ranging from 3 to 5 nm in thickness have been deposited by dc magnetron sputtering on GaAs substrates at 350 °C. These films show superconducting properties comparable to similar films grown on sapphire and MgO. In order to demonstrate the potential for monolithic integration, SSPDs were fabricated and measured on GaAs/AlAs Bragg mirrors, showing a clear cavity enhancement, with a peak quantum efficiency of 18.3% at λ = 1300 nm and T = 4.2 K.
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Mannino G, Spinella C, Ruggeri R, La Magna A, Fisicaro G, Fazio E, et al. Crystallization of implanted amorphous silicon during millisecond annealing by infrared laser irradiation. Appl Phys Lett. 2010;97(2):3.
Abstract: We investigated the homogenous nucleation of crystalline grains in amorphous Si during transient temperature pulse of few milliseconds IR laser irradiation. The crystallized volume fraction is ~80%. Significant crystallization occurs in nonsteady regime because of the rapid temperature variation (106 °C/s). Our model combines the time evolution of the crystal grain population with the consumption of the amorphous volume due to the growth of grains. Thanks to the experimental approach based on a laser source to heat α-Si and the theoretical model we extended the description of the spontaneous crystallization up to 1323 K or 250 K above the temperature investigated by conventional annealing.
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Kataoka T, Kajikawa K, Kitagawa J, Kadoya Y, Takemura Y. Improved sensitivity of terahertz detection by GaAs photoconductive antennas excited at 1560 nm. Appl Phys Lett. 2010;97:201110 (1–3).
Abstract: The terahertz detection by photoconductive antennas (PCAs) based on low-temperature grown (LTG) GaAs with 1.5 μm pulse excitation was revisited. We found that the detection efficiency can be improved by a factor of 10 (20 dB) by reducing the excitation spot size and the gap length of the PCA, maintaining the low noise feature of the PCA on LTG GaAs. As a result, the signal-to-noise ratio higher than 50 dB was obtained at a reasonable incident power of 9.5 mW, suggesting that the scheme is promising for the detection of terahertz waves in practical time domain systems.
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