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Author
Cao, Q.
;
Yoon, S. F.
;
Tong, C. Z.
;
Ngo, C. Y.
;
Liu, C. Y.
;
Wang, R.
;
Zhao, H. X.
Title
Two-state competition in 1.3 μm multilayer InAs/InGaAs quantum dot lasers
Type
Journal Article
Year
2009
Publication
Applied Physics Letters
Abbreviated Journal
Appl. Phys. Lett.
Volume
95
Issue
19
Pages
3
Keywords
2DEG
Abstract
The competition of ground state (GS) and excited state (ES) is investigated from the as-grown and thermally annealed 1.3 μm ten-layer p-doped InAs/GaAs quantum dot (QD) lasers. The modal gain competition between GS and ES are measured and analyzed around the ES threshold characteristics. Our results show that two-state competition is more significant in devices with short cavity length operating at high temperature. By comparing the as-grown and annealed devices, we demonstrate enhanced GS and suppressed ES lasing from the QD laser annealed at 600 °C for 15 s.
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RPLAB @ gujma @
Serial
673
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