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Гольцман ГН, Смирнов КВ. По итогам проектов российского фонда фундаментальных исследований. Проект РФФИ # 98-02-16897 Электрон-фононное взаимодействие в двумерном электронном газе полупроводниковых гетероструктур при низких температурах. Письма в ЖЭТФ. 2001;74(9):532–8.
Abstract: Рассмотрены теоретические и экспериментальные работы, посвященные изучению электрон-фононного взаимодействия в двумерном электронном газе полупроводниковых гетероструктур при низких температурах в случае сильного разогрева в электрическом поле, в квазиравновесных условиях и в квантующем магнитном поле, перпендикулярном 2D слою.
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Shelkovnikov A, Grain C, Nguyen CT, Butcher RJ, Amy-Klein A, Chardonnet C. 500-Hz two-photon Ramsey fringes with a SF6 beam: towards a new frequency standard in the 30-THz spectral region. Appl Phys B: Lasers and Optics. 2001;73:93–8.
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Mel’nikov AP, Gurvich YA, Shestakov LN, Gershenzon EM. Magnetic field effects on the nonohmic impurity conduction of uncompensated crystalline silicon. Jetp Lett. 2001;73(1):44–7.
Abstract: The impurity conduction of a series of crystalline silicon samples with the concentration of major impurity N ≈ 3 × 1016 cm−3 and with a varied, but very small, compensation K was measured as a function of the electric field E in various magnetic fields H-σ(H, E). It was found that, at K < 10−3 and in moderate E, where these samples are characterized by a negative nonohmicity (dσ(0, E)/dE < 0), the ratio σ(H, E)/σ(0, E) > 1 (negative magnetoresistance). With increasing E, these inequalities are simultaneously reversed (positive nonohmicity and positive magnetoresistance). It is suggested that both negative and positive nonohmicities are due to electron transitions in electric fields from impurity ground states to states in the Mott-Hubbard gap.
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Siemsen KJ, Bernard JE, Madej AA, Marmet L. Absolute frequency measurement of a CO2/OsO4 stabilized laser at 28.8 THz. Appl Phys B: Lasers and Optics. 2001;72:567–73.
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Hübers H-W, Schubert J, Krabbe A, Birk M, Wagner G, Semenov A, et al. Parylene anti-reflection coating of a quasi-optical hot-electron-bolometric mixer at terahertz frequencies. Infrared Physics & Technology. 2001;42(1):41–7.
Abstract: Parylene C was investigated as anti-reflection coating for silicon at terahertz frequencies. Measurements with a Fourier-transform spectrometer show that the transmittance of pure silicon can be improved by about 30% when applying a layer of Parylene C with a quarter wavelength optical thickness. The 10% bandwidth of this coating extends from 1.5 to 3 THz for a center frequency of 2.3–2.5 THz, where the transmittance is constant. Heterodyne measurements demonstrate that the noise temperature of a hot-electron-bolometric mixer can be reduced significantly by coating the silicon lens of the hybrid antenna with a quarter wavelength Parylene C layer. Compared to the same mixer with an uncoated lens the improvement is about 30% at a frequency of 2.5 THz.
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Codreanu I, Boreman GD. Infrared microstrip dipole antennas. Microw Opt Technol Lett. 2001;29(6):381–3.
Abstract: Abstract 10.1002/mop.1184.abs We report on the successful use of niobium microbolometers coupled to microstrip dipole antennas for the detection of midinfrared radiation. Measurements of the detector response versus antenna length performed at the 10.6 μm wavelength allowed us to identify the first three current-wave resonances along the antenna arms. The detector response was also measured as a function of the radiation wavelength in the 911 μm spectral domain. Excellent agreement between the experimental results and finite-difference time-domain (FDTD) predictions was obtained.
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Kasparek W, Fernandez A, Hollmann F, Wacker R. Measurements of ohmic losses of metallic reflectors at 140 GHz using a 3-mirror resonator technique. Int. J. Infrared and Millimeter Waves. 2001;22(11):1695–707.
Abstract: The reflectivity of metallic mirrors in the millimeter wave region does not only depend on the material, but also on the structure and roughness of the surface. We have performed measurements of the reflectivity of various plane and grooved metallic and graphite samples at 140 GHz. The technique is based on the comparison of the quality factor of a 2-mirror reference resonator with the quality factor of a 3-mirror resonator which has identical dimensions and includes the mirror to be tested. After a brief presentation of the theory, the set-up is described and the reflection loss for various aluminium and copper mirrors as well as vacuum compatible materials for applications in thermonuclear fusion experiments are presented and discussed.
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Somani S, Kasapi S, Wilsher K, Lo W, Sobolewski R, Gol’tsman G. New photon detector for device analysis: Superconducting single-photon detector based on a hot electron effect. J Vac Sci Technol B. 2001;19(6):2766–9.
Abstract: A novel superconducting single-photon detector (SSPD), intrinsically capable of high quantum efficiency (up to 20%) over a wide spectral range (ultraviolet to infrared), with low dark counts (<1 cps), and fast (<40 ps) timing resolution, is described. This SSPD has been used to perform timing measurements on complementary metal–oxide–semiconductor integrated circuits (ICs) by detecting the infrared light emission from switching transistors. Measurements performed from the backside of a 0.13 μm geometry flip–chip IC are presented. Other potential applications for this detector are in telecommunications, quantum cryptography, biofluorescence, and chemical kinetics.
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Van Rudd J, Johnson JL, Mittleman DM. Cross-polarized angular emission patterns from lens-coupled terahertz antennas. J. Opt. Soc. Am. B. 2001;18(10):1524.
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Kroug M, Cherednichenko S, Merkel H, Kollberg E, Voronov B, Gol'tsman G, et al. NbN hot electron bolometric mixers for terahertz receivers. IEEE Trans Appl Supercond. 2001;11(1):962–5.
Abstract: Sensitivity and gain bandwidth measurements of phonon-cooled NbN superconducting hot-electron bolometer mixers are presented. The best receiver noise temperatures are: 700 K at 1.6 THz and 1100 K at 2.5 THz. Parylene as an antireflection coating on silicon has been investigated and used in the optics of the receiver. The dependence of the mixer gain bandwidth (GBW) on the bias voltage has been measured. Starting from low bias voltages, close to operating conditions yielding the lowest noise temperature, the GBW increases towards higher bias voltages, up to three times the initial value. The highest measured GBW is 9 GHz within the same bias range the noise temperature increases by a factor of two.
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