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Author Semenov, A. D.; Gousev, Y. P.; Renk, K. F.; Voronov, B. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Schwaab, G.W.; Feinaugle, R. url  doi
openurl 
  Title Noise characteristics of a NbN hot-electron mixer at 2.5 THz Type Journal Article
  Year 1997 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume (up) 7 Issue 2 Pages 3572-3575  
  Keywords NbN HEB mixers  
  Abstract The noise temperature of a NbN phonon cooled hot-electron mixer has been measured at a frequency of 2.5 THz for various operating conditions. We obtained for optimal operation a double sideband mixer noise temperature of /spl ap/14000 K and a system conversion loss of /spl ap/23 dB at intermediate frequencies up to 1 GHz. The dependences of the mixer noise temperature on the bias voltage, local oscillator power, and intermediate frequency were consistent with the phenomenological description based on the effective temperature approximation.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1051-8223 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1594  
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Author Svechnikov, S. I.; Okunev, O. V.; Yagoubov, P. A.; Gol'tsman, G. N.; Voronov, B. M.; Cherednichenko, S. I.; Gershenzon, E. M.; Gerecht, E.; Musante, C. F.; Wang, Z.; Yngvesson, K. S. url  doi
openurl 
  Title 2.5 THz NbN hot electron mixer with integrated tapered slot antenna Type Journal Article
  Year 1997 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume (up) 7 Issue 2 Pages 3548-3551  
  Keywords NbN HEB mixers  
  Abstract A Hot Electron Bolometer (HEB) mixer for 2.5 THz utilizing a NbN thin film device, integrated with a Broken Linearly Tapered Slot Antenna (BLTSA), has been fabricated and is presently being tested. The NbN HEB device and the antenna were fabricated on a SiO2membrane. A 0.5 micrometer thick SiO2layer was grown by rf magnetron reactive sputtering on a GaAs wafer. The HEB device (phonon-cooled type) was produced as several parallel strips, 1 micrometer wide, from an ultrathin NbN film 4-7 nm thick, that was deposited onto the SiO2layer by dc magnetron reactive sputtering. The BLTSA was photoetched in a multilayer Ti-Au metallization. In order to strengthen the membrane, the front-side of the wafer was coated with a 5 micrometer thick polyimide layer just before the membrane formation. The last operation was anisotropic etching of the GaAs in a mixture of HNO3and H2O2.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1051-8223 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1595  
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Author Zorin, M.; Milostnaya, I.; Gol'tsman, G. N.; Gershenzon, E. M. url  doi
openurl 
  Title Fast NbN superconducting switch controlled by optical radiation Type Journal Article
  Year 1997 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume (up) 7 Issue 2 Pages 3734-3737  
  Keywords NbN superconducting switch  
  Abstract The switching time and the optical control power of the NbN superconducting switch have been measured. The device is based on the ultrathin film 5-8 nm thick patterned as a structure of several narrow parallel strips (/spl sim/1 /spl mu/m wide) connected to wide current leads. The current-voltage characteristic of the switch at temperature 4.2 K demonstrated a hysteresis due to DC current self-heating. We studied the superconducting-to-resistive state transition induced by both optical and bias-current excitations. The optical pulse duration was /spl sim/20 ps and the rise time of the current step was determined to be less than 50 ps. The optical pulse was delivered to the switch by the semiconductor laser through an optical fiber. We found that the measured switching time is less than the duration of the optical excitation. The threshold optical power density does not exceed 3/spl middot/10/sup 3/ W/cm/sup 2/. The proposed device can be used in the fiber input of LTS rapid single flux quantum circuits.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1051-8223 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1596  
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Author Svechnikov, S.; Gol'tsman, G.; Voronov, B.; Yagoubov, P.; Cherednichenko, S.; Gershenzon, E.; Belitsky, V.; Ekstrom, H.; Kollberg, E.; Semenov, A.; Gousev, Y.; Renk, K. url  doi
openurl 
  Title Spiral antenna NbN hot-electron bolometer mixer at submm frequencies Type Journal Article
  Year 1997 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume (up) 7 Issue 2 Pages 3395-3398  
  Keywords NbN HEB mixers  
  Abstract We have studied the phonon-cooled hot-electron bolometer (HEB) as a quasioptical mixer based on a spiral antenna designed for the 0.3-1 THz frequency band and fabricated on sapphire and high resistivity silicon substrates. HEB devices were produced from superconducting 3.5-5 nm thick NbN films with a critical temperature 10-12 K and a critical current density of approximately 10/sup 7/ A/cm/sup 2/ at 4.2 K. For these devices we reached a DSB receiver noise temperature below 1500 K, a total conversion loss of L/sub t/=16 dB in the 500-700 GHz frequency range, an IF bandwidth of 3-4 GHz and an optimal LO absorbed power of /spl sime/4 /spl mu/W. We experimentally analyzed various contributions to the conversion loss and obtained an RF coupling factor of about 5 dB, internal mixer loss of 10 dB and IF mismatch of 1 dB.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1051-8223 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1597  
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Author Semenov, A. D.; Heusinger, M. A.; Renk, K. F.; Menschikov, E.; Sergeev, A. V.; Elant'ev, A. I.; Goghidze, I. G.; Gol'tsman, G. N. url  doi
openurl 
  Title Influence of phonon trapping on the performance of NbN kinetic inductance detectors Type Journal Article
  Year 1997 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume (up) 7 Issue 2 Pages 3083-3086  
  Keywords NbN KID  
  Abstract Voltage and microwave photoresponse of NbN thin films to modulated and pulsed optical radiation reveals, far below the superconducting transition, a response time consistent with the lifetime of nonequilibrium quasiparticles. We show that even in 5 nm thick films at 4.2 K the phonon trapping is significant resulting in a quasiparticle lifetime of a few nanoseconds that is an order of magnitude larger than the recombination time. Values and temperature dependence of the quasiparticle lifetime obey the Bardeen-Cooper-Schrieffer theory and are in quantitative agreement with the electron-phonon relaxation rate determined from the resistive response near the superconducting transition. We discuss a positive effect of the phonon trapping on the performance of kinetic inductance detectors.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1051-8223 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1598  
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Author Voronov, B. M.; Gershenzon, E. M.; Gol'tsman, G. N.; Gubkina, T. O.; Semash, V. D. url  openurl
  Title Superconductive properties of ultrathin NbN films on different substrates Type Journal Article
  Year 1994 Publication Sverkhprovodimost': Fizika, Khimiya, Tekhnika Abbreviated Journal Sverkhprovodimost': Fizika, Khimiya, Tekhnika  
  Volume (up) 7 Issue 6 Pages 1097-1102  
  Keywords NbN films  
  Abstract A study was made on dependence of surface resistance, critical temperature and width of superconducting transition on application temperature and thickness of NbN films, which varied within the range of 3-10 nm. Plates of sapphire, fused and monocrystalline quartz, MgO, as well as Si and silicon oxide were used as substrates. NbN films with 160 μθ·cm specific resistance and 16.5 K (Tc) critical temperature were obtained on sapphire substrates. Intensive growth of ΔTc was noted for films, applied on fused quartz, with increase of precipitation temperature. This is explained by occurrence of high tensile stresses in NbN films, caused by sufficient difference of thermal coefficients of expansion of NbN and quartz.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Russian Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0131-5366 ISBN Medium  
  Area Expedition Conference  
  Notes Сверхпроводниковые свойства ультратонких пленок NbN на различных подложках Approved no  
  Call Number Serial 1631  
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Author Kawamura, J. H.; Tong, C.-Y.E.; Blundell, R.; Cosmo Papa, D.; Hunter, T. R.; Gol'tsman, G.; Cherednichenko, S.; Voronov, B.; Gershenzon, E. url  doi
openurl 
  Title An 800 GHz NbN phonon-cooled hot-electron bolometer mixer receiver Type Journal Article
  Year 1999 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume (up) 9 Issue 2 Pages 3753-3756  
  Keywords NbN HEB mixers  
  Abstract We describe a heterodyne receiver developed for astronomical applications to operate in the 350 /spl mu/m atmospheric window. The waveguide receiver employs a superconductive NbN phonon-cooled hot-electron bolometer mixer. The double sideband receiver noise temperature closely follows 1 kGHz/sup -1/ across 780-870 GHz, with the intermediate frequency centered at 1.4 GHz. The conversion loss is about 15 dB. The receiver was installed for operation at the University of Arizona/Max Planck Institute for Radio Astronomy Submillimeter Telescope facility. The instrument was successfully used to conduct test observations of a number of celestial sources in a number of astronomically important spectral lines.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1051-8223 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 288  
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Author Goltsman, Gregory N.; Vachtomin, Yuriy B.; Antipov, Sergey V.; Finkel, Matvey I.; Maslennikov, Sergey N.; Polyakov, Stanislav L.; Svechnikov, Sergey I.; Kaurova, Natalia S.; Grishina, Elisaveta V.; Voronov, Boris M. url  openurl
  Title Low-noise NbN phonon-cooled hot-electron bolometer mixers for terahertz heterodyne receivers Type Conference Article
  Year 2005 Publication Proc. 9-th WMSCI Abbreviated Journal Proc. 9-th WMSCI  
  Volume (up) 9 Issue Pages 154-159  
  Keywords NbN HEB mixers  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher International Institute of Informatics and Systemics Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 547  
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Author Schwaab, G.W.; Sirmain, G.; Schubert, J.; Hubers, H.-W.; Gol'tsman, G.; Cherednichenko, S.; Verevkin, A.; Voronov, B.; Gershenzon, E. url  doi
openurl 
  Title Investigation of NbN phonon-cooled HEB mixers at 2.5 THz Type Journal Article
  Year 1999 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume (up) 9 Issue 2 Pages 4233-4236  
  Keywords NbN HEB mixers  
  Abstract The development of superconducting hot electron bolometric (HEB) mixers has been a big step forward in the direction of quantum noise limited mixer performance at THz frequencies. Such mixers are crucial for the upcoming generation of airborne and spaceborne THz heterodyne receivers. In this paper we report on new results on a phonon-cooled NbN HEB mixer using e-beam lithography. The superconducting film is 3 nm thick. The mixer is 0.2 μm long and 1.5 μm wide and it is integrated in a spiral antenna on a Si substrate. The device is quasi-optically coupled through a Si lens and a dielectric beam combiner to the radiation of an optically pumped FIR ring gas laser cavity. The performance of the mixer at different THz frequencies from 0.69 to 2.55 THz with an emphasis on 2.52 THz is demonstrated. At 2.52 THz minimum DSB noise temperatures of 4200 K have been achieved at an IF of 1.5 GHz and a bandwidth of 40 MHz with the mixer mounted in a cryostat and a 0.8 m long signal path in air.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1051-8223 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 550  
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Author Gurovich, B. A.; Tarkhov, M. A.; Prikhod'ko, K. E.; Kuleshova, E. A.; Komarov, D. A.; Stolyarov, V. L.; Olshanskii, E. D.; Goncharov, B. V.; Goncharova, D. A.; Kutuzov, L. V.; Domantovskii, A. G. openurl 
  Title Controlled modification of superconducting properties of NbN ultrathin films under composite ion beam irradiation Type Journal Article
  Year 2014 Publication Nanotechnologies in Russia Abbreviated Journal Nanotechnologies in Russia  
  Volume (up) 9 Issue 7 Pages 386-390  
  Keywords superconducting NbN films composite ion beam irradiation protoning  
  Abstract In this work, the results of studying the microstructure and superconducting properties of ultrathin films on the basis of NbN in the initial state and after modification by being subjecting to composite ion beam irradiation with the energy ~1–3) keV are presented. HRTEM analysis showed that the initial films on the sapphire substrate in orientation “c-cut” are characterized by a grain size essentially exceeding the film thickness, while on the other substrates the size of grains corresponds to the thickness of film. Using XPS analysis, it was shown that in the initial films the atomic ratio of Nb and N is 0.51/0.49, respectively, the percentage of oxygen being lower than 5%. For ultrathin films 5 nm in thickness, the critical temperature of transit to superconducting state (T c) is found to be ~3.6 K and the density of critical current is jc ~8MA/cm2. In the work it is experimentally determined that the irradiation of NbN films by composite ion beams leads to the controlled modification of its superconducting properties due to the process of selective substitution of nitrogen atoms on the oxygen atoms.  
  Address  
  Corporate Author Thesis  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1000  
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