Abstract: We present data of quantum detector tomography for the samples specifically optimized for this problem. Using this method, we take results of hot-spot correlation length of 17 ± 2 nm.

Abstract: We researched the relation between deposition and ultra-thin VN films parameters. To conduct the experimental study we varied substrate temperature, Ar and N2 partial pressures and deposition rate. The study allowed us to obtain the films with close to the bulk values transition temperatures and implement such samples in order to fabricate superconducting single-photon detectors.

Abstract: Ultrafast, high quantum efficiency single photon detectors are among the most sought-after elements in modern quantum optics and quantum communication. High photon detection efficiency is essential for scalable measurement-based quantum computation, quantum key distribution, and loophole-free Bell experiments. However, imperfect modal matching and finite photon absorption rates have usually limited the maximum attainable detection efficiency of single photon detectors. Here we demonstrate a superconducting nanowire detector atop nanophotonic waveguides which allows us to drastically increase the absorption length for incoming photons. When operating the detectors close to the critical current we achieve high on-chip single photon detection efficiency up to 91% at telecom wavelengths, with uncertainty dictated by the variation of the waveguide photon flux. We also observe remarkably low dark count rates without significant compromise of detection efficiency. Furthermore, our detectors are fully embedded in a scalable silicon photonic circuit and provide ultrashort timing jitter of 18ps. Exploiting this high temporal resolution we demonstrate ballistic photon transport in silicon ring resonators. The direct implementation of such a detector with high quantum efficiency, high detection speed and low jitter time on chip overcomes a major barrier in integrated quantum photonics.

Abstract: With use of the travelling-wave geometry approach, integrated superconductor- nanophotonic devices based on silicon nitride nanophotonic waveguide with a superconducting NbN-nanowire suited on top of the waveguide were fabricated. NbN-nanowire was operated as a single-photon counting detector with up to 92 % on-chip detection efficiency in the coherent mode, serving as a highly sensitive IR heterodyne mixer with spectral resolution (f/df) greater than 106 in C-band at 1550 nm wavelength

Abstract: WSi thin films have the advantages for creating SNSPDs with a large active area or array of detectors on a single substrate due to the amorphous structure. The superconducting properties of ultrathin WSi films substantially depends on their structure and thickness as the NbN films. Scientific groups investigating WSi films mainly focused only on changes of their thickness and the ratio of the components on the substrate at room temperature. This paper presents experiments to determine the effect of the bias potential on the substrate, the temperature of the substrate, and the peak power of pulsed magnetron sputtering, which is the equivalent of ionization, a tungsten target, on the surface resistance and superconducting properties of the WSi ultrathin films. The negative effect of the substrate temperature and the positive effect of the bias potential and the ionization coefficient (peak current) allow one to choose the best WSi films formation mode for SNSPD: substrate temperature 297 K, bias potential -60 V, and peak current 3.5 A.