|
|
Gershenzon EM, Gol'tsman GN, Elant'ev AI, Karasik BS, Potoskuev SE. Intense electromagnetic radiation heating of superconductor electrons in resistive state. Fizika Nizkikh Temperatur. 1988;14(7):753–63.
Abstract: An experimental study is made of the effect of intense radiation in the millimeter and submillimeter ranges on thin and narrow Nb films in the resistive state. It is found that the excess resistance resulting from radiation and the dependence of its relaxation time on radiation intensity and transport current can be explained in terms of the effect of electron heating. Quantitative agreement is obtained between the experimental data and a homogeneous electron heating model.
|
|
|
|
Gershenzon EM, Gol'tsman GN, Mel'nikov AP. Binding energy of a carrier with a neutral impurity atom in germanium and in silicon. JETP Lett. 1971;14(5):185–6.
|
|
|
|
Gershenzon EM, Gol'tsman GN. Transitions of electrons between excited states of donors in germanium. JETP Lett. 1971;14(2):63–5.
|
|
|
|
Gershenzon EM, Gol'tsman GN, Emtsev VV, Mashovets TV, Ptitsyna NG, Ryvkin SM. Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium. JETP Lett. 1971;14(6):241.
|
|
|
|
Blagosklonskaya LE, Gershenzon EM, Gol’tsman GN, Elant’ev AI. Effect of a strong magnetic field on the spectrum of donors in InSb. Sov Phys Semicond. 1978;11(12):1395–7.
|
|
|
|
Blagosklonskaya LE, Gershenzon EM, Gol'tsman GN, Elant'ev AI. Effect of a high magnetic field on the spectrum of donors in InSb. Fizika i Tekhnika Poluprovodnikov. 1977;11(12):2373–5.
|
|
|
|
Gershenzon EM, Gurvich YA, Orlova SL, Ptitsina NG. Scattering of electrons by charged impurities in Ge under cyclotron resonance conditions. Presumably: Sov Phys Semicond | Физика и техника полупроводников. 1976;10:1379–83.
|
|
|
|
Antipov SV, Svechnikov SI, Smirnov KV, Vakhtomin YB, Finkel MI, Goltsman GN, et al. Noise temperature of quasioptical NbN hot electron bolometer mixers at 900 GHz. Physics of Vibrations. 2001;9(4):242–5.
|
|
|
|
Svechnikov SI, Antipov SV, Vakhtomin YB, Goltsman GN, Gershenzon EM, Cherednichenko SI, et al. Conversion and noise bandwidths of terahertz NbN hot-electron bolometer mixers. Physics of Vibrations. 2001;9(3):205–10.
|
|
|
|
Gerecht E, Musante CF, Jian H, Yngvesson KS, Dickinson J, Waldman J, et al. New results for NbN phonon-cooled hot electron bolometric mixers above 1 THz. IEEE Trans Appl Supercond. 1999;9(2):4217–20.
Abstract: NbN Hot Electron Bolometric (HEB) mixers have produced promising results in terms of DSB receiver noise temperature (2800 K at 1.56 THz). The LO source for these mixers is a gas laser pumped by a CO/sub 2/ laser and the device is quasi-optically coupled through an extended hemispherical lens and a self-complementary log-periodic toothed antenna. NbN HEBs do not require submicron dimensions, can be operated comfortably at 4.2 K or higher, and require LO power of about 100-500 nW. IF noise bandwidths of 5 GHz or greater have been demonstrated. The DC bias point is also not affected by thermal radiation at 300 K. Receiver noise temperatures below 1 THz are typically 450-600 K and are expected to gradually approach these levels above 1 THz as well. NbN HEB mixers thus are rapidly approaching the type of performance required of a rugged practical receiver for astronomy and remote sensing in the THz region.
|
|
