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Gershenzon EM, Gol'tsman GN, Mel'nikov AP. Binding energy of a carrier with a neutral impurity atom in germanium and in silicon. JETP Lett. 1971;14(5):185–6.
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Gershenzon EM, Gol'tsman GN. Transitions of electrons between excited states of donors in germanium. JETP Lett. 1971;14(2):63–5.
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Gershenzon EM, Gol'tsman GN, Emtsev VV, Mashovets TV, Ptitsyna NG, Ryvkin SM. Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium. JETP Lett. 1971;14(6):241.
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Gershenzon EM, Gol'tsman GN, Ptitsina NG. Observation of the free-exciton spectrum at submillimeter wavelengths. JETP Lett. 1972;16(4):161–2.
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Gershenzon EM, Gol'tsman GN, Ptitsina NG. Submillimeter spectroscopy of semiconductors. Sov Phys JETP. 1973;37(2):299–304.
Abstract: The possibility is considered of carrying out submillimeter-wave spectral investigations of semiconductors by means of a high resolution spectrometer with backward-wave tubes. Results of a study of the excitation spectra of small impurities, D-(A +) centers and free excitons in germanium are presented.
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Gershenzon EM, Gol'tsman GN, Ptitsina NG. Investigation of free excitons in Ge and their condensation at submillimeter wavelengths. Sov Phys JETP. 1976;43(1):116–22.
Abstract: Results are presented of an investigation of free excitons in Ge in the submillimeter wavelength range for low as well as for high excitation levels when interaction between the excitons becomes important. The free-exciton energy spectrum is discussed. It is shown that the drop radii and their concentrations can be determined by measuring the temperature dependence of the free-exciton concentration. A section of the phase diagram is obtained in the 0.5-2.8 K temperature range for the free excitons+condensate system.
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Gershenzon EM, Gol'tsman GN, Kagane ML. Energy spectrum of acceptors in germanium and its response to a magnetic field. Sov Phys JETP. 1977;45(4):769–76.
Abstract: We investigated the spectrum of the submillimeter photoconductivity of p-Ge at helium temperatures and the effects of a magnetic field up to 40 kOe on the spectrum. A large number of lines of transitions between the excited states of the acceptors was observed, some of the lines were identified, and the energies of a number of spectral levels B, Al, Ga, In, and TI in Ge were identified. The results are compared with calculations and with experimental data obtained from the spectra of the photoexcitation of the ground state of the impurities. Using one transition as an example, we discuss the splitting of the excited states of acceptors in the magnetic field and under uniaxial compression.
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Gershenzon EM, Gol'tsman GN, Elant'ev AI. Energy spectrum of the donors in GaAs and Ge and its reaction to a magnetic field. Sov Phys JETP. 1977;45(3):555–65.
Abstract: The spectrum of the submillimeter photoconductivity of n-GaAs and n-Ge in a magnetic field up to 60 kOe at helium temperatures was investigated. A large number of lines due to transitions between excited states of the donors have been investigated, and the measurement results were used to determine a number of levels of the energy spectrum in a wide range of magnetic fields. For GaAs, these data are compared with calculations of the energy spectrum of the hydrogen atom in magnetic fields up to -2X lo9 Oe. For the donors in Ge, the energy spectrum is investigated at different orientations of the magnetic field relative to the crystallographic axes (H 11 [loo], [I 1 I], [110]), and these results are also compared with the corresponding calculations.
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Blagosklonskaya LE, Gershenzon EM, Gol'tsman GN, Elant'ev AI. Effect of a high magnetic field on the spectrum of donors in InSb. Fizika i Tekhnika Poluprovodnikov. 1977;11(12):2373–5.
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Gershenzon EM, Gol'tsman GN, Kagane ML. Observation of free carrier resonances in p-type germanium at submillimeter wavelengths. Sov Phys Solid State. 1978;20(4):573–9.
Abstract: The spectrum of hole resonances in pure p-Ge for submillimetre in quantizing magnetic fields has been studied and identified. Measurements of photoconductivity spectra of p-Ge were made in the wave range lambda = 2-0.3 mm at temp. of 4.2-15 deg K in magnetic fields H up to 40 Measurements at various frequencies showed that the position of a series of characteristic resonances depends on the frequency of the illumination. This is in line with theoretical conclusions about the effective mass of the carriers increasing with rise in the magnetic field as a result of the interaction of the edge of the valency band with the split spin-orbital interaction of the sub 7 exp + band and the conduction band. The relative intensity of the quantum resonance lines of the free holes depends on the excitation conditions.
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