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Moshkova, M.; Divochiy, A.; Morozov, P.; Vakhtomin, Y.; Antipov, A.; Zolotov, P.; Seleznev, V.; Ahmetov, M.; Smirnov, K. |
![goto web page (via DOI) doi](https://db.rplab.ru/refbase/img/doi.gif)
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Title |
High-performance superconducting photon-number-resolving detectors with 86% system efficiency at telecom range |
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Journal Article |
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Year ![sorted by Year field, ascending order (up)](https://db.rplab.ru/refbase/img/sort_asc.gif) |
2019 |
Publication |
J. Opt. Soc. Am. B |
Abbreviated Journal |
J. Opt. Soc. Am. B |
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Volume |
36 |
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3 |
Pages |
B20 |
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Keywords |
NbN PNR SSPD, SNSPD |
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The use of improved fabrication technology, highly disordered NbN thin films, and intertwined section topology makes it possible to create high-performance photon-number-resolving superconducting single-photon detectors (PNR SSPDs) that are comparable to conventional single-element SSPDs at the telecom range. The developed four-section PNR SSPD has simultaneously an 86±3% system detection efficiency, 35 cps dark count rate, ∼2 ns dead time, and maximum 90 ps jitter. An investigation of the PNR SSPD’s detection efficiency for multiphoton events shows good uniformity across sections. As a result, such a PNR SSPD is a good candidate for retrieving the photon statistics for light sources and quantum key distribution systems. |
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0740-3224 |
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1225 |
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Author |
Rasulova, G. K.; Pentin, I. V.; Goltsman, G. N. |
![goto web page (via DOI) doi](https://db.rplab.ru/refbase/img/doi.gif)
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Title |
Terahertz emission from a weakly-coupled GaAs/AlGaAs superlattice biased into three different modes of current self-oscillations |
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Journal Article |
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Year ![sorted by Year field, ascending order (up)](https://db.rplab.ru/refbase/img/sort_asc.gif) |
2019 |
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AIP Advances |
Abbreviated Journal |
AIP Advances |
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Volume |
9 |
Issue |
10 |
Pages |
105220 |
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Keywords |
GaAs/AlGaAs superlattice, SL, NbN HEB |
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Radio-frequency modulated terahertz (THz) emission power from weakly-coupled GaAs/AlGaAs superlattice (SL) has been increased by parallel connection of several SL mesas. Each SL mesa is a self-oscillator with its own oscillation frequency and mode. In coupled non-identical SL mesas biased at different voltages within the hysteresis loop the chaotic, quasiperiodic and frequency-locked modes of self-oscillations of current arise. THz emission was detected when three connected in parallel SL mesas were biased into the frequency-locked and quasiperiodic modes of self-oscillations of current, while in the chaotic mode of those it falls to the noise level. |
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2158-3226 |
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1274 |
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Antipov, S.; Trifonov, A.; Krause, S.; Meledin, D.; Kaurova, N.; Rudzinski, M.; Desmaris, V.; Belitsky, V.; Goltsman, G. |
![goto web page (via DOI) doi](https://db.rplab.ru/refbase/img/doi.gif)
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Title |
Improved bandwidth of a 2 THz hot-electron bolometer heterodyne mixer fabricated on sapphire with a GaN buffer layer |
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Journal Article |
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Year ![sorted by Year field, ascending order (up)](https://db.rplab.ru/refbase/img/sort_asc.gif) |
2019 |
Publication |
Supercond. Sci. Technol. |
Abbreviated Journal |
Supercond. Sci. Technol. |
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32 |
Issue |
7 |
Pages |
075003 |
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Keywords |
NbN HEB mixer, GaN buffer layer, sapphire substrate |
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We report on the signal-to-noise and gain bandwidth of a niobium nitride (NbN) hot-electron bolometer (HEB) mixer at 2 THz fabricated on a sapphire substrate with a GaN buffer layer. Two mixers with different DC properties and geometrical dimensions were studied and they demonstrated very close bandwidth performance. The signal-to-noise bandwidth is increased to 8 GHz in comparison to the previous results, obtained without a buffer-layer. The data were taken in a quasi-optical system with the use of the signal-to-noise method, which is close to the signal levels used in actual astrophysical observations. We find an increase of the gain bandwidth to 5 GHz. The results indicate that prior results obtained on a substrate of crystalline GaN can also be obtained on a conventional sapphire substrate with a few micron MOCVD-deposited GaN buffer-layer. |
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IOP Publishing |
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Antipov_2019 |
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1277 |
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Ren, Y.; Zhang, D. X.; Zhou, K. M.; Miao, W.; Zhang, W.; Shi, S. C.; Seleznev, V.; Pentin, I.; Vakhtomin, Y.; Smirnov, K. |
![goto web page (via DOI) doi](https://db.rplab.ru/refbase/img/doi.gif)
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Title |
10.6 μm heterodyne receiver based on a superconducting hot-electron bolometer mixer and a quantum cascade laser |
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Journal Article |
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Year ![sorted by Year field, ascending order (up)](https://db.rplab.ru/refbase/img/sort_asc.gif) |
2019 |
Publication |
AIP Advances |
Abbreviated Journal |
AIP Advances |
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Volume |
9 |
Issue |
7 |
Pages |
075307 |
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Keywords |
NbN HEB mixers, QCL, IR |
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We report on the development of a heterodyne receiver at mid-infrared wavelength for high-resolution spectroscopy applications. The receiver employs a superconducting NbN hot electron bolometer as a mixer and a room temperature distributed feedback quantum cascade laser operating at 10.6 μm (28.2 THz) as a local oscillator. The stabilization of the heterodyne receiver has been achieved using a feedback loop controlling the output power of the laser. Improved Allan variance times as well as a double sideband receiver noise temperature of 5000 K and a noise bandwidth of 2.8 GHz of the receiver system are demonstrated.
The work is supported in part by the National Key R&D Program of China under Grant 2018YFA0404701, by the CAS program under Grant QYZDJ-SSW-SLH043 and GJJSTD20180003, by the National Natural Science Foundation of China (NSFC) under Grant 11773083, by the “Hundred Talents Program” of the “Pioneer Initiative”, and in part by the CAS Key Lab for Radio Astronomy. |
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2158-3226 |
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1293 |
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Author |
Baeva, E. M.; Titova, N. A.; Kardakova, A. I.; Piatrusha, S. U.; Khrapai, V. S. |
![goto web page (via DOI) doi](https://db.rplab.ru/refbase/img/doi.gif)
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Title |
Universal bottleneck for thermal relaxation in disordered metallic films |
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Journal Article |
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Year ![sorted by Year field, ascending order (up)](https://db.rplab.ru/refbase/img/sort_asc.gif) |
2020 |
Publication |
JETP Lett. |
Abbreviated Journal |
Jetp Lett. |
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Volume |
111 |
Issue |
2 |
Pages |
104-108 |
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Keywords |
NbN disordered metallic films, thermal relaxation |
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We study the heat relaxation in current biased metallic films in the regime of strong electron–phonon coupling. A thermal gradient in the direction normal to the film is predicted, with a spatial temperature profile determined by the temperature-dependent heat conduction. In the case of strong phonon scattering, the heat conduction occurs predominantly via the electronic system and the profile is parabolic. This regime leads to the linear dependence of the noise temperature as a function of bias voltage, in spite of the fact that all the dimensions of the film are large compared to the electron–phonon relaxation length. This is in stark contrast to the conventional scenario of relaxation limited by the electron–phonon scattering rate. A preliminary experimental study of a 200-nm-thick NbN film indicates the relevance of our model for materials used in superconducting nanowire single-photon detectors. |
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0021-3640 |
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1164 |
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Author |
Titova, N. A.; Baeva, E. M.; Kardakova, A. I.; Goltsman, G. N. |
![goto web page (via DOI) doi](https://db.rplab.ru/refbase/img/doi.gif)
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Title |
Fabrication of NbN/SiNx:H/SiO2 membrane structures for study of heat conduction at low temperatures |
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Conference Article |
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Year ![sorted by Year field, ascending order (up)](https://db.rplab.ru/refbase/img/sort_asc.gif) |
2020 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
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Volume |
1695 |
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Pages |
012190 |
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Keywords |
NbN films, insulating membrane |
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Here we report on the development of NbN/SiNx:H/SiO2-membrane structures for investigation of the thermal transport at low temperatures. Thin NbN films are known to be in the regime of a strong electron-phonon coupling, and one can assume that the phononic and electronic baths in the NbN are in local equilibrium. In such case, the cooling of the NbN-based devices strongly depends on acoustic matching to the substrate and substrate thermal characteristics. For the insulating membrane much thicker than the NbN film, our preliminary results demonstrate that the membrane serves as an additional channel for the thermal relaxation of the NbN sample. That implies a negligible role of thermal boundary resistance of the NbN-SiNx:H interface in comparison with the internal thermal resistance of the insulating membrane. |
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1742-6588 |
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1165 |
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Sidorova, M.; Semenov, Alexej D.; Hübers, H.-W.; Ilin, K.; Siegel, M.; Charaev, I.; Moshkova, M.; Kaurova, N.; Goltsman, G. N.; Zhang, X.; Schilling, A. |
![goto web page (via DOI) doi](https://db.rplab.ru/refbase/img/doi.gif)
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Title |
Electron energy relaxation in disordered superconducting NbN films |
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Journal Article |
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Year ![sorted by Year field, ascending order (up)](https://db.rplab.ru/refbase/img/sort_asc.gif) |
2020 |
Publication |
Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
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Volume |
102 |
Issue |
5 |
Pages |
054501 (1 to 15) |
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Keywords |
NbN SSPD, SNSPD, HEB, bandwidth, relaxation time |
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We report on the inelastic-scattering rate of electrons on phonons and relaxation of electron energy studied by means of magnetoconductance, and photoresponse, respectively, in a series of strongly disordered superconducting NbN films. The studied films with thicknesses in the range from 3 to 33 nm are characterized by different Ioffe-Regel parameters but an almost constant product qTl (qT is the wave vector of thermal phonons and l is the elastic mean free path of electrons). In the temperature range 14–30 K, the electron-phonon scattering rates obey temperature dependencies close to the power law 1/τe−ph∼Tn with the exponents n≈3.2–3.8. We found that in this temperature range τe−ph and n of studied films vary weakly with the thickness and square resistance. At 10 K electron-phonon scattering times are in the range 11.9–17.5 ps. The data extracted from magnetoconductance measurements were used to describe the experimental photoresponse with the two-temperature model. For thick films, the photoresponse is reasonably well described without fitting parameters, however, for thinner films, the fit requires a smaller heat capacity of phonons. We attribute this finding to the reduced density of phonon states in thin films at low temperatures. We also show that the estimated Debye temperature in the studied NbN films is noticeably smaller than in bulk material. |
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2469-9950 |
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1266 |
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Author |
Manova, N. N.; Simonov, N. O.; Korneeva, Y. P.; Korneev, A. A. |
![goto web page (via DOI) doi](https://db.rplab.ru/refbase/img/doi.gif)
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Title |
Developing of NbN films for superconducting microstrip single-photon detector |
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Conference Article |
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Year ![sorted by Year field, ascending order (up)](https://db.rplab.ru/refbase/img/sort_asc.gif) |
2020 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
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Volume |
1695 |
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Pages |
012116 (1 to 5) |
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NbN SSPD, SNSPD, NbN films |
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We optimized NbN films on a Si substrate with a buffer SiO2 layer to produce superconducting microstrip single-photon detectors with saturated dependence of quantum efficiency (QE) versus normalized bias current. We varied thickness of films and observed the maximum QE saturation for device based on the thinner film with the lowest ratio RS300/RS20. |
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1742-6588 |
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1786 |
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Polyakova, M. I.; Korneev, A. A.; Semenov, A. V. |
![goto web page (via DOI) doi](https://db.rplab.ru/refbase/img/doi.gif)
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Title |
Comparison single- and double- spot detection efficiencies of SSPD based to MoSi and NbN films |
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Conference Article |
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Year ![sorted by Year field, ascending order (up)](https://db.rplab.ru/refbase/img/sort_asc.gif) |
2020 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
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Volume |
1695 |
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Pages |
012146 (1 to 3) |
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NbN SSPD, SNSPD, MoSi |
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In this work, we present results of quantum detector tomography of superconducting single photon detector (SSPD) based on MoSi film, and compare them with previously reported data on NbN. We find that for both materials hot spot interaction length coincides with the strip width, and the dependence of single and double-spot detection efficiencies on bias current are compatible with sufficiently large hot-spot size, approaching the strip width. |
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1787 |
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Vodolazov, D. Y.; Manova, N. N.; Korneeva, Y. P.; Korneev, A. A. |
![goto web page (via DOI) doi](https://db.rplab.ru/refbase/img/doi.gif)
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Title |
Timing jitter in NbN superconducting microstrip single-photon detector |
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Journal Article |
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Year ![sorted by Year field, ascending order (up)](https://db.rplab.ru/refbase/img/sort_asc.gif) |
2020 |
Publication |
Phys. Rev. Applied |
Abbreviated Journal |
Phys. Rev. Applied |
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14 |
Issue |
4 |
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044041 (1 to 8) |
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NbN SSPD, SNSPD |
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We experimentally study timing jitter of single-photon detection by NbN superconducting strips with width w ranging from 190 nm to 3μm. We find that timing jitter of both narrow (190 nm) and micron-wide strips is about 40 ps at currents where internal detection efficiency η saturates and it is close to our instrumental jitter. We also calculate intrinsic timing jitter in wide strips using the modified time-dependent Ginzburg-Landau equation coupled with a two-temperature model. We find that with increasing width the intrinsic timing jitter increases and the effect is most considerable at currents where a rapid growth of η changes to saturation. We relate it with complicated vortex and antivortex dynamics, which depends on a photon’s absorption site across the strip and its width. The model also predicts that at current close to depairing current the intrinsic timing jitter of a wide strip could be about ℏ/kBTc (Tc is a critical temperature of superconductor), i.e., the same as for a narrow strip. |
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2331-7019 |
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