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Il'in KS, Gol'tsman GN, Voronov BM, Sobolewski R. Characterization of the electron energy relaxation process in NbN hot-electron devices. In: Proc. 10th Int. Symp. Space Terahertz Technol.; 1999. p. 390–7.
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Schubert J, Semenov A, Hübers H-W, Gol'tsman G, Schwaab G, Voronov B, et al. Broad-band terahertz NbN hot-electron bolometric mixer. In: Inst. Phys. Conf. Vol 167.; 1999. p. 663–6.
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Tong C-YE, Kawamura J, Todd RH, Papa DC, Blundell R, Smith M, et al. Successful operation of a 1 THz NbN hot-electron bolometer receiver. In: Proc. 11th Int. Symp. Space Terahertz Technol.; 2000. p. 49–59.
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Semenov AD, Hübers H–W, Schubert J, Gol'tsman GN, Elantiev AI, Voronov BM, et al. Frequency dependent noise temperature of the lattice cooled hot-electron terahertz mixer. In: Proc. 11th Int. Symp. Space Terahertz Technol.; 2000. p. 39–48.
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Semenov AD, Hübers H-W, Schubert J, Gol'tsman GN, Elantiev AI, Voronov BM, et al. Design and performance of the lattice-cooled hot-electron terahertz mixer. J Appl Phys. 2000;88(11):6758–67.
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Gerecht E, Musante CF, Zhuang Y, Ji M, Yngvesson KS, Goyette T, et al. NbN hot electron bolometric mixer with intrinsic receiver noise temperature of less than five times the quantum noise limit. In: Proc. IMS. Vol 2.; 2000. p. 1007–10.
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Kawamura J, Blundell R, Tong C-YE, Papa DC, Hunter TR, Paine SN, et al. Superconductive hot-electron-bolometer mixer receiver for 800-GHz operation. IEEE Trans Microw Theory Techn. 2000;48(4):683–9.
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Khosropanah P, Merkel H, Yngvesson S, Adam A, Cherednichenko S, Kollberg E. A distributed device model for phonon-cooled HEB mixers predicting IV characteristics, gain, noise and IF bandwidth. In: Proc. 11th Int. Symp. Space Terahertz Technol. University of Michigan, Ann Arbor, MI USA; 2000. p. 474–88.
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Cherednichenko S, Rönnung F, Gol'tsman G, Kollberg E, Winkler D. YBa2Cu3O7−δ hot-electron bolometer mixer. Phys C: Supercond. 2000;341-348:2653–4.
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Hübers H-W, Semenov A, Schubert J, Gol'tsman G, Voronov B, Gershenzon E. Performance of the phonon-cooled hot-electron bolometric mixer between 0.7 THz and 5.2 THz. In: Proc. 8-th Int. Conf. on Terahertz Electronics.; 2000. p. 117–9.
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