Sidorova M, Semenov A, Korneev A, Chulkova G, Korneeva Y, Mikhailov M, et al. Electron-phonon relaxation time in ultrathin tungsten silicon film [Internet].; 2018 [cited 2024 Jul 5].arXiv:1607.07321v1 [physics.ins-det]
Abstract: Using amplitude-modulated absorption of sub-THz radiation (AMAR) method, we studied electron-phonon relaxation in thin disordered films of tungsten silicide. We found a response time ~ 800 ps at critical temperature Tc = 3.4 K, which scales as minus 3 in the temperature range from 1.8 to 3.4 K. We discuss mechanisms, which can result in a strong phonon bottle-neck effect in a few nanometers thick film and yield a substantial difference between the measured time, characterizing response at modulation frequency, and the inelastic electron-phonon relaxation time. We estimate the electron-phonon relaxation time to be in the range ~ 100-200 ps at 3.4 K.
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Sidorova MV, Kozorezov AG, Semenov AV, Korneev AA, Chulkova GM, Korneeva YP, et al. Non-bolometric bottleneck in electron-phonon relaxation in ultra-thin WSi film [Internet].; 2018 [cited 2024 Jul 5].arXiv:1607.07321v4 [physics.ins-det]
Abstract: We developed the model of the internal phonon bottleneck to describe the energy exchange between the acoustically soft ultrathin metal film and acoustically rigid substrate. Discriminating phonons in the film into two groups, escaping and nonescaping, we show that electrons and nonescaping phonons may form a unified subsystem, which is cooled down only due to interactions with escaping phonons, either due to direct phonon conversion or indirect sequential interaction with an electronic system. Using an amplitude-modulated absorption of the sub-THz radiation technique, we studied electron-phonon relaxation in ultrathin disordered films of tungsten silicide. We found an experimental proof of the internal phonon bottleneck. The experiment and simulation based on the proposed model agree well, resulting in tau{e-ph} = 140-190 ps at TC = 3.4 K, supporting the results of earlier measurements by independent techniques.
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Murphy A, Semenov A, Korneev A, Korneeva Y, Gol’tsman G, Bezryadin A. Dark counts initiated by macroscopic quantum tunneling in NbN superconducting photon detectors [Internet].; 2014 [cited 2024 Jul 5].arXiv:1410.7689v2 [cond-mat.supr-con]
Abstract: We perform measurements of the switching current distributions of three w = 120 nm wide, 4 nm thick NbN superconducting strips which are used for single-photon detectors. These strips are much wider than the diameter the vortex cores, so they are classified as quasi-two-dimensional (quasi-2D). We discover evidence of macroscopic quantum tunneling by observing the saturation of the standard deviation of the switching distributions at temperatures around 2 K. We analyze our results using the Kurkijarvi-Garg model and find that the escape temperature also saturates at low temperatures, confirming that at sufficiently low temperatures, macroscopic quantum tunneling is possible in quasi-2D strips and can contribute to dark counts observed in single photon detectors.
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Cherednichenko S, Drakinskiy V, Lecomte B, Dauplay F, Krieg J-M, Delorme Y, et al. Terahertz heterodyne array based on NbN HEB mixers [abstract]. In: Proc. 19th Int. Symp. Space Terahertz Technol.; 2008. 43.
Abstract: A 16 pixel heterodyne receiver for 2.5 THz is been developed based on NbN superconducting hot-electron bolometer (HEB) mixers. The receiver uses a quasioptical RF coupling approach where HEB mixers are integrated into double dipole antennas on 1.5μm thick Si3N4 / SiO2 membranes. Miniature mirrors (one per pixel) and back short for the antenna were used to design the output mixer beam profile. The camera design allows all 16 pixel IF readout in parallel. The gain bandwidth of the HEB mixers on Si3N4 / SiO 2 membranes was found to be about 3 GHz, when an MgO buffer layers is applied on the membrane. We will also present the progress in the camera heterodyne tests.
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Il'in K, Siegel M, Semenov A, Engel A, Hübers H-W, Hollmann E, et al. Thickness dependence of superconducting properties of ultrathin Nb and NbN films. In: AKF-Frühjahrstagung.; 2004.
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