|
|
Il'in KS, Verevkin AA, Gol'tsman GN, Sobolewski R. Infrared hot-electron NbN superconducting photodetectors for imaging applications. Supercond Sci Technol. 1999;12(11):755–8.
Abstract: We report an effective quantum efficiency of 340, responsivity >200 A W-1 (>104 V W-1) and response time of 27±5 ps at temperatures close to the superconducting transition for NbN superconducting hot-electron photodetectors (HEPs) in the near-infrared and optical ranges. Our studies were performed on a few nm thick NbN films deposited on sapphire substrates and patterned into µm-size multibridge detector structures, incorporated into a coplanar transmission line. The time-resolved photoresponse was studied by means of subpicosecond electro-optic sampling with 100 fs wide laser pulses. The quantum efficiency and responsivity studies of our photodetectors were conducted using an amplitude-modulated infrared beam, fibre-optically coupled to the device. The observed picosecond response time and the very high efficiency and sensitivity of the NbN HEPs make them an excellent choice for infrared imaging photodetectors and input optical-to-electrical transducers for superconducting digital circuits.
|
|
|
|
Rönnung F, Cherednichenko S, Winkler D, Gol'tsman GN. A nanoscale YBCO mixer optically coupled with a bow tie antenna. Supercond Sci Technol. 1999;12(11):853–5.
Abstract: The bolometric response of YBa2Cu3O7-δ(YBCO) hot-electron bolometers (HEBs) to near-infrared radiation was studied. Devices were fabricated from a 50 nm thick film and had in-plane areas of 10 × 10 µm2, 2 × 0.2 µm2, 1 × 0.2µm2 and 0.5 × 0.2 µm2. We found that nonequilibrium phonons cool down more effectively for the bolometers with smaller area. For the smallest bolometer the bolometric component in the response is 10 dB less than for the largest one.
|
|
|
|
Danerud M, Winkler D, Lindgren M, Zorin M, Trifonov V, Karasik B, et al. A fast infrared detector based on patterned YBCO thin film. Supercond Sci Technol. 1994;7(5):321–3.
Abstract: Detectors for infrared radiation ( lambda =0.85 mu m) were made of 50 nm thick YBa2Cu3O7- delta films on LaAlO3 and MgO or 60 nm thick films on NdGaO3. Parallel strips (1 mu m wide by 20 mu m long) were patterned in the films and formed the active device. These devices were designed to detect short infrared laser pulses by electron heating. The detectors were current biased into the resistive and the normal states. The response was studied in direct pulse measurements as well as by amplitude modulation of a laser. The pulse measurements showed a fast picosecond response followed by a slower decay related to phonon escape through the film-substrate interface and heat diffusion in the substrate. The frequency spectra up to 10 GHz showed two slopes with a knee corresponding to the phonon escape time.
|
|
|
|
Verevkin AA, Ptitsina NG, Chulcova GM, Gol'tsman GN, Gershenzon EM, Yngvesson KS. Direct measurements of energy relaxation time of electrons in AlGaAs/GaAs heterostructures under quasi-equilibrium conditions. Surface Science. 1996;361-362:569–73.
Abstract: For the first time, results are presented of a direct measurement of the energy relaxation time τε of 2D electrons in an AlGaAs/GaAs heterojunction at T = 1 and 5–20 K. A weak temperature dependence of τε for the T > 4K range and a linear temperature dependence of the reciprocal of τε for T < 4K have been observed. The linear dependence τε−1 ≈ T in the Bloch-Gruneisen regime is direct evidence of the predominance of the piezo-electric mechanism of electron-phonon interaction in non-elastic electron scattering processes. The values of τε in this regime are in very good agreement with the results of the Karpus theory. At higher temperatures, where the deformation-potential scattering becomes noticeable, a substantial disagreement between the experimental data and the theoretical results is observed.
|
|
|
|
Voronov BM, Gershenzon EM, Gol'tsman GN, Gubkina TO, Semash VD. Superconductive properties of ultrathin NbN films on different substrates. Sverkhprovodimost': Fizika, Khimiya, Tekhnika. 1994;7(6):1097–102.
Abstract: A study was made on dependence of surface resistance, critical temperature and width of superconducting transition on application temperature and thickness of NbN films, which varied within the range of 3-10 nm. Plates of sapphire, fused and monocrystalline quartz, MgO, as well as Si and silicon oxide were used as substrates. NbN films with 160 μθ·cm specific resistance and 16.5 K (Tc) critical temperature were obtained on sapphire substrates. Intensive growth of ΔTc was noted for films, applied on fused quartz, with increase of precipitation temperature. This is explained by occurrence of high tensile stresses in NbN films, caused by sufficient difference of thermal coefficients of expansion of NbN and quartz.
|
|
