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Bandurin D, Svintsov D, Gayduchenko I, Xu S, Principi A, Moskotin M, et al. Resonant terahertz photoresponse and superlattice plasmons in graphene field-effect transistors [abstract]. In: APS March Meeting.; 2019. F14.015.
Abstract: Plasmons, collective oscillations of electron systems, can couple light and electric current, and thus can be used to create compact photodetectors, radiation mixers, and spectrometers. Despite the effort, it has proven challenging to implement plasmonic devices operating at THz frequencies. The material capable to meet this challenge is graphene as it supports long-lived electrically-tunable plasmons. In this talk, we will demonstrate plasmon-assisted resonant detection of THz radiation by antenna-coupled graphene FETs that act as both rectifying elements and plasmonic Fabry-Perot cavities amplifying the photoresponse. We will show that by varying the plasmon velocity using gate voltage, our detectors can be tuned between multiple resonant modes, a functionality that we apply to measure plasmons' wavelength and lifetime in graphene as well as to probe collective modes in its moire minibands. Our approach offers a convenient tool for further plasmonic research that is often difficult under non-ambient conditions and promises a viable route for various THz applications. We acknowledge Leverhulme Trust, Russian Science Foundation Grants N18-72-00234 and 17-72-30036, Russian Foundation for Basic Research No. 18-57-06001 and 16-29-03402.
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Ferrari S, Kovalyuk V, Vetter A, Lee C, Rockstuhl C, Semenov A, et al. Analysis of the detection response of waveguide-integrated superconducting nanowire single-photon detectors at high count rate. Appl Phys Lett. 2019;115(10):101104.
Abstract: Nanophotonic circuitry and superconducting nanowires have been successfully combined for detecting single photons, propagating in an integrated photonic circuit, with high efficiency and low noise and timing uncertainty. Waveguide-integrated superconducting nanowire single-photon detectors (SNSPDs) can nowadays be engineered to achieve subnanosecond recovery times and can potentially be adopted for applications requiring Gcps count rates. However, particular attention shall be paid to such an extreme count rate regime since artifacts in the detector functionality emerge. In particular, a count-rate dependent detection efficiency has been encountered that can compromise the accuracy of quantum detector tomography experiments. Here, we investigate the response of waveguide-integrated SNSPDs at high photon flux and identify the presence of parasitic currents due to the accumulation of charge in the readout electronics to cause the above-mentioned artifact in the detection efficiency. Our approach allows us to determine the maximum photon count rate at which the detector can be operated without adverse effects. Our findings are particularly important to avoid artifacts when applying SNSPDs for quantum tomography.
We acknowledge support through ERC Consolidator Grant No. 724707 and from the Deutsche Forschungsgemeinschaft through Project No. PE 1832/5-1,2, as well as funding by the Volkswagen Foundation. This project has received funding from the European Union's Horizon 2020 research and innovation program under the Marie Skłodowska-Curie Grant Agreement No. 675745. V.K. and G.G. acknowledge support from the Russian Science Foundation Project No. 16-12-00045 (NbN film deposition and testing). A.V. acknowledges support from the Karlsruhe School of Optics and Photonics (KSOP).
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Rasulova GK, Pentin IV, Goltsman GN. Terahertz emission from a weakly-coupled GaAs/AlGaAs superlattice biased into three different modes of current self-oscillations. AIP Advances. 2019;9(10):105220.
Abstract: Radio-frequency modulated terahertz (THz) emission power from weakly-coupled GaAs/AlGaAs superlattice (SL) has been increased by parallel connection of several SL mesas. Each SL mesa is a self-oscillator with its own oscillation frequency and mode. In coupled non-identical SL mesas biased at different voltages within the hysteresis loop the chaotic, quasiperiodic and frequency-locked modes of self-oscillations of current arise. THz emission was detected when three connected in parallel SL mesas were biased into the frequency-locked and quasiperiodic modes of self-oscillations of current, while in the chaotic mode of those it falls to the noise level.
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Ren Y, Zhang DX, Zhou KM, Miao W, Zhang W, Shi SC, et al. 10.6 μm heterodyne receiver based on a superconducting hot-electron bolometer mixer and a quantum cascade laser. AIP Advances. 2019;9(7):075307.
Abstract: We report on the development of a heterodyne receiver at mid-infrared wavelength for high-resolution spectroscopy applications. The receiver employs a superconducting NbN hot electron bolometer as a mixer and a room temperature distributed feedback quantum cascade laser operating at 10.6 μm (28.2 THz) as a local oscillator. The stabilization of the heterodyne receiver has been achieved using a feedback loop controlling the output power of the laser. Improved Allan variance times as well as a double sideband receiver noise temperature of 5000 K and a noise bandwidth of 2.8 GHz of the receiver system are demonstrated.
The work is supported in part by the National Key R&D Program of China under Grant 2018YFA0404701, by the CAS program under Grant QYZDJ-SSW-SLH043 and GJJSTD20180003, by the National Natural Science Foundation of China (NSFC) under Grant 11773083, by the “Hundred Talents Program” of the “Pioneer Initiative”, and in part by the CAS Key Lab for Radio Astronomy.
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Tretyakov I, Svyatodukh S, Chumakova A, Perepelitsa A, Kaurova N, Shurakov A, et al. Room temperature silicon detector for IR range coated with Ag2S quantum dots. In: IRMMW-THz.; 2019.
Abstract: A silicon has been the chief technological semiconducting material of modern microelectronics and has had a strong influence on all aspects of society. Applications of Si-based optoelectronic devices are limited to the visible and near infrared ranges. The expansion of the Si absorption to shorter wavelengths of the infrared range is of considerable interest to optoelectronic applications. By creating impurity states in Si it is possible to cause sub-band gap photon absorption. Here, we present an elegant and effective technology of extending the photoresponse of towards the IR range. Our approach is based on the use of Ag 2 S quantum dots (QDs) planted on the surface of Si. The specific sensitivity of the Ag 2 S/Si heterostructure is 10 11 cm√HzW -1 at 1.55μm. Our findings open a path towards the future study and development of Si detectors for technological applications.
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