Records |
Author |
Semenov, Alexei; Richter, Heiko; Smirnov, Konstantin; Voronov, Boris; Gol'tsman, Gregory; Hübers, Heinz-Wilhelm |
Title |
The development of terahertz superconducting hot-electron bolometric mixers |
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Journal Article |
Year |
2004 |
Publication |
Supercond. Sci. Technol. |
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Supercond. Sci. Technol. |
Volume |
17 |
Issue |
5 |
Pages |
436-439 |
Keywords |
NbN HEB mixers |
Abstract |
We present recent advances in the development of NbN hot-electron bolometric (HEB) mixers for flying terahertz heterodyne receivers. Three important issues have been addressed: the quality of the source NbN films, the effect of the bolometer size on the spectral properties of different planar feed antennas, and the local oscillator (LO) power required for optimal operation of the mixer. Studies of the NbN films with an atomic force microscope indicated a surface structure that may affect the performance of the smallest mixers. Measured spectral gain and noise temperature suggest that at frequencies above 2.5 THz the spiral feed provides better overall performance than the double-slot feed. Direct measurements of the optimal LO power support earlier estimates made in the framework of the uniform mixer model. |
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357 |
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Author |
Yagoubov, Pavel; Kroug, Matthias; Merkel, Harald; Kollberg, Erik; Schubert, Josef; Hübers, Heinz-Wilhelm |
Title |
NbN hot electron bolometric mixers at frequencies between 0.7 and 3.1 THz |
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Journal Article |
Year |
1999 |
Publication |
Supercond. Sci. Technol. |
Abbreviated Journal ![sorted by Abbreviated Journal field, descending order (down)](img/sort_desc.gif) |
Supercond. Sci. Technol. |
Volume |
12 |
Issue |
11 |
Pages |
989-991 |
Keywords |
NbN HEB mixers |
Abstract |
The performance of NbN-based phonon-cooled hot electron bolometric (HEB) quasioptical mixers is investigated in the 0.7-3.1 THz frequency range. The devices are made from a 3.5-4 nm thick NbN film on high resistivity Si and integrated with a planar spiral antenna on the same substrate. The length of the bolometer microbridge is 0.1-0.2 µm; the width is 1-2 µm. The best results of the DSB receiver noise temperature measured at 1.5 GHz intermediate frequency are: 800 K at 0.7 THz, 1100 K at 1.6 THz, 2000 K at 2.5 THz and 4200 K at 3.1 THz. The measurements were performed with a far infrared laser as the local oscillator (LO) source. The estimated LO power requirement is less than 500 nW at the receiver input. First results on spiral antenna polarization measurements are reported. |
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0953-2048 |
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295 |
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Zhang, W.; Miao, W.; Zhong, J. Q.; Shi, S. C.; Hayton, D. J.; Vercruyssen, N.; Gao, J. R.; Goltsman, G. N. |
Title |
Temperature dependence of the receiver noise temperature and IF bandwidth of superconducting hot electron bolometer mixers |
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Journal Article |
Year |
2014 |
Publication |
Supercond. Sci. Technol. |
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Supercond. Sci. Technol. |
Volume |
27 |
Issue |
8 |
Pages |
085013 (1 to 5) |
Keywords |
NbN HEB mixers |
Abstract |
In this paper we study the temperature dependence of the receiver noise temperature and IF noise bandwidth of superconducting hot electron bolometer (HEB) mixers. Three superconducting NbN HEB devices of different transition temperatures (Tc) are measured at 0.85 THz and 1.4 THz at different bath temperatures (Tbath) between 4 K and 9 K. Measurement results demonstrate that the receiver noise temperature of superconducting NbN HEB devices is nearly constant for Tbath/Tc, less than 0.8, which is consistent with the simulation based on a distributed hot-spot model. In addition, the IF noise bandwidth appears independent of Tbath/Tc, indicating the dominance of phonon cooling in the investigated HEB devices. |
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0953-2048 |
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1358 |
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Antipov, S.; Trifonov, A.; Krause, S.; Meledin, D.; Kaurova, N.; Rudzinski, M.; Desmaris, V.; Belitsky, V.; Goltsman, G. |
Title |
Improved bandwidth of a 2 THz hot-electron bolometer heterodyne mixer fabricated on sapphire with a GaN buffer layer |
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Journal Article |
Year |
2019 |
Publication |
Supercond. Sci. Technol. |
Abbreviated Journal ![sorted by Abbreviated Journal field, descending order (down)](img/sort_desc.gif) |
Supercond. Sci. Technol. |
Volume |
32 |
Issue |
7 |
Pages |
075003 |
Keywords |
NbN HEB mixer, GaN buffer layer, sapphire substrate |
Abstract |
We report on the signal-to-noise and gain bandwidth of a niobium nitride (NbN) hot-electron bolometer (HEB) mixer at 2 THz fabricated on a sapphire substrate with a GaN buffer layer. Two mixers with different DC properties and geometrical dimensions were studied and they demonstrated very close bandwidth performance. The signal-to-noise bandwidth is increased to 8 GHz in comparison to the previous results, obtained without a buffer-layer. The data were taken in a quasi-optical system with the use of the signal-to-noise method, which is close to the signal levels used in actual astrophysical observations. We find an increase of the gain bandwidth to 5 GHz. The results indicate that prior results obtained on a substrate of crystalline GaN can also be obtained on a conventional sapphire substrate with a few micron MOCVD-deposited GaN buffer-layer. |
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IOP Publishing |
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Antipov_2019 |
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1277 |
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Yang, Z. Q.; Hajenius, M.; Baselmans, J. J. A.; Gao, J. R.; Voronov, B.; Gol’tsman, G. N. |
Title |
Reduced noise in NbN hot-electron bolometer mixers by annealing |
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Journal Article |
Year |
2006 |
Publication |
Supercond. Sci. Technol. |
Abbreviated Journal ![sorted by Abbreviated Journal field, descending order (down)](img/sort_desc.gif) |
Supercond. Sci. Technol. |
Volume |
19 |
Issue |
4 |
Pages |
L (9 to 12) |
Keywords |
NbN HEB mixers |
Abstract |
We find that the sensitivity of heterodyne receivers based on superconducting hot-electron bolometers (HEBs) increases by 25–30% after annealing at 85 °C in vacuum. The devices studied are twin-slot antenna coupled mixers with a small NbN bridge of 1 × 0.15 µm2. We show that annealing changes the device properties as reflected in sharper resistive transitions of the complete device, apparently reducing the device-related noise. The lowest receiver noise temperature of 700 K is measured at a local oscillator frequency of 1.63 THz and a bath temperature of 4.3 K. |
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0953-2048 |
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1456 |
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