|
Currie NC, Demma FJ, Ferris Jr. DD, Kwasowsky BR, McMillan RW, Wicks MC. Infrared and millimeter-wave sensors for military special operations and law enforcement applications. Int. J. Infrared and Millimeter Waves. 1996;17(7):1117–38.
|
|
Gordon NT, Lees DJ, Bowen G, Phillips TS, Haigh M, Jones CL, et al. HgCdTe detectors operating above 200 K. J. Electron. Mater.. 2006;35(6):1140–4.
|
|
Kinch MA, Wan C-F Beck J. D. 1/f noise in HgCdTe photodiodes. J. Electron. Mater.. 2005;34(6):928–32.
|
|
Parvitte B, Thomas X, Courtois D. Wide band (2.5 GHz) infrared heterodyne spectrometer. Int. J. Infrared and Millimeter Waves. 1995;16(9):1533–40.
|
Zhou YD, Becker CR, Ashokan R, Selamet Y, Chang Y, Boreiko RT, et al. Progress in far-infrared detection technology. In: Proc. SPIE. Vol 4795.; 2002. p. 121–8. (Society of Photo-Optical Instrumentation Engineers (SPIE) Conference Series).
Abstract: II-VI intrinsic very long wavelength infrared (VLWIR, λc~20 to 50 μm) materials, HgCdTe alloys as well as HgCdTe/CdTe superlattices, were grown by molecular beam epitaxy (MBE). The layers were characterized by means of X-ray diffraction, conventional Fourier transform infrared spectroscopy, Hall effect measurements and transmittance electron microscopy (TEM). Photoconductor devices were processed and their spectral response was also measured to demonstrate their applicability in the VLWIR region.
|
