Karpov A, Miller D, Stern JA, Bumble B, LeDuc HG, Zmuidzinas J. Low noise NbTiN 1.25 THz SIS mixer for Herschel Space Observatory. In: Proc. 16th Int. Symp. Space Terahertz Technol. Göteborg, Sweden; 2005. 450.
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Karpov A, Miller D, Rice F, Stern JA, Bumble B, LeDuc HG, et al. Development of 1.25 THz SIS mixer for Herschel Space Observatory. In: Zmuidzinas J, Holland WS, editors. Proc. SPIE. Vol 6275.; 2006. 62751.
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Karpov A, Blondel J, Voss M, Gundlach KH. A three photon noise SIS heterodyne receiver at submillimeter wavelength. IEEE Trans. Appl. Supercond.. 1999;9(2):4456–9.
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Karpov A, Miller D, Rice F, Zmuidzinas J, Stern JA, Bumble B, et al. Low noise 1.2 THz SIS receiver. In: Jet Propulsion Laboratory CIit.u.t.e of T, editor. Proc. 12th Int. Symp. Space Terahertz Technol. San Diego, CA, USA; 2001. p. 21–2.
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Larrey V, Villegier J-C, Salez M, Miletto-Granozio F, Karpov A. Processing and characterization of high Jc NbN superconducting tunnel junctions for THz analog circuits and RSFQ. IEEE Trans. Appl. Supercond.. 1999;9(2):3216–9.
Abstract: A generic NbN Superconducting Tunnel Junctions (STJ) technology has been developed using conventional substrates (Si and SOI-SIMOX) for making THz spectrometers including SIS receivers and RSFQ logic gates. NbN/MgO/NbN junctions with area of 1 /spl mu/m/sup 2/, Jc of 10 kA/cm/sup 2/ and low sub-gap leakage current (Vm>25 mV) are currently obtained from room temperature sputtered multilayers followed by a post-annealing at 250/spl deg/C. Using a thin MgO buffer layer deposited underneath the NbN electrodes, ensures lower NbN surface resistance values (Rs=7 /spl mu//spl Omega/) at 10 GHz and 4 K. Epitaxial NbN [100] films on MgO [100] with high gap frequency (1.4 THz) have also been achieved under the same deposition conditions at room temperature. The NbN SIS has shown good I-V photon induced steps when LO pumped at 300 GHz. We have developed an 8 levels Al/NbN multilayer process for making 1.5 THz SIS mixers (including Al antennas) on Si membranes patterned in SOI-SIMOX. Using the planarization techniques developed at the Si-MOS CEA-LETI Facility, we have also demonstrated on the possibility of extending our NbN technology to high level RSFQ circuit integration with 0.5 /spl mu/m/sup 2/ junction area, made on large area substrates (up to 8 inches).
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